Photonic crystals in biology
Photonic crystals in biology
Photonic crystals in biology
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Poster Session, Tuesday, June 15<br />
Theme A1 - B702<br />
Structural and Electrical Properties of Ru Doped ZnO Film Fabricated by Sol-Gel Technique and<br />
us<strong>in</strong>g for Gas Sens<strong>in</strong>g<br />
1<br />
,1<br />
1<br />
1<br />
UMurat BektasUP P*, M.ErolP P, O. SancakogluP P, M. F. EbeoglugilP H. SözbilenP<br />
3P, Ömer Mermer 2,3<br />
1,2<br />
P, and Erdal CelikP<br />
1<br />
PDokuz Eylul University, Department of Metallurgical and Materials Eng<strong>in</strong>eer<strong>in</strong>g, Tınaztepe 35160 Izmir-TURKEY.<br />
PDokuz Eylul University, Center for Fabrication and Application of Electronic Materials (EMUM), Tınaztepe 35160 Izmir-TURKEY.<br />
3<br />
PEge University, Deparment of Electrical and Electronic Eng<strong>in</strong>eer<strong>in</strong>gs, Bornova, 35100 Izmir-Turkey<br />
2<br />
Abstract-In this study, ZnOR Rth<strong>in</strong> films were deposited on glass substrates via sol-gel technique for sensor applications. Transparent solutions<br />
were prepared from Zn and Ru based precursors. The solutions were deposited on glass substrates by us<strong>in</strong>g sp<strong>in</strong> coat<strong>in</strong>g technique which<br />
o<br />
provides th<strong>in</strong> and smooth films. Deposited films were dried at 300 P PC for 10 m<strong>in</strong> <strong>in</strong> order to remove hydrous and volatile content,<br />
o<br />
o<br />
subsequently to remove organic content films were heat treated at 500P<br />
PC for 5 m<strong>in</strong> and then they were annealed at 600P PC for 1 hour to<br />
obta<strong>in</strong> ZnO based films <strong>in</strong> air atmosphere. F<strong>in</strong>ally the surface morphology and roughness of the films were determ<strong>in</strong>ed via AFM (atomic<br />
force microscopy) and profilometer respectively. The phase structure was determ<strong>in</strong>ed by XRD. The electrical conductivity of the film<br />
dependence of temperature was measured to identify the dom<strong>in</strong>ant conductivity mechanism. The optical parameters of the film were also<br />
determ<strong>in</strong>ed by us<strong>in</strong>g spectrophotometer.<br />
The importance of z<strong>in</strong>c oxide (ZnO), among other metal<br />
oxides, is <strong>in</strong>creas<strong>in</strong>g due to many applications. Th<strong>in</strong> films<br />
of z<strong>in</strong>c oxide comb<strong>in</strong>e <strong>in</strong>terest<strong>in</strong>g properties such as nontoxicity,<br />
good electrical properties, high lum<strong>in</strong>ous<br />
transmittance, excellent substrate adherence, hardness,<br />
optical and piezoelectric behaviour and its low price. ZnO<br />
has relatively high physical and chemical stabilities, and<br />
hence it has many high temperature applications [1].<br />
Z<strong>in</strong>c oxide (ZnO) is an important multifunctional<br />
material with applications such as transistors, gas sensors,<br />
solar cells, nanocantilevers, etc [2]. Sensors for toxic gases<br />
have attracted much attention due to the grow<strong>in</strong>g concern<br />
of environmental protection and safety. The major<br />
applications of gas sensors are domestic or <strong>in</strong>dustrial<br />
security, environmental and emission monitor<strong>in</strong>g,medical<br />
and agribus<strong>in</strong>ess controls, etc. [3]. Although efforts are<br />
cont<strong>in</strong>u<strong>in</strong>g for CO gas sens<strong>in</strong>g us<strong>in</strong>g the hetero structure of<br />
SnO2 and ZnO [3], experimental results on pure ZnO for<br />
CO sens<strong>in</strong>g is lack<strong>in</strong>g and it may be related to rapid gra<strong>in</strong><br />
growth and densification. For gas sensors, it is necessary<br />
to have a porous microstructure with small particle size<br />
yield<strong>in</strong>g large ratio of the surface area to the bulk [4].<br />
Undoped ZnO responses perceptibly to LPG while Ru<br />
doped sample highly senses ethanol vapors [5]. Scientific<br />
studies about this topic po<strong>in</strong>t out that substitution causes<br />
change <strong>in</strong> the electrical properties and particle size. Also<br />
substitution is important <strong>in</strong> selective sens<strong>in</strong>g of gases or<br />
substances.<br />
In this research; pure, Ru substituted ZnOR Rth<strong>in</strong> film were<br />
deposited on glass substrates. A sol-gel route was derived<br />
to produce th<strong>in</strong> films.<br />
The sol–gel sp<strong>in</strong> coat<strong>in</strong>g method has dist<strong>in</strong>ct advantages<br />
such as cost effectiveness, th<strong>in</strong>, transparent,<br />
multicomponent oxide layers of many compositions on<br />
various substrates, simplicity, excellent compositional<br />
control, homogeneity and lower crystallization<br />
temperature [6].<br />
Surface morphology of Ru-ZnO th<strong>in</strong> film obta<strong>in</strong>ed by<br />
Atomic Force Microscopy (AFM) and illustrated <strong>in</strong><br />
Figure1. Sp<strong>in</strong> coat<strong>in</strong>g technique provides nanoscale and<br />
smooth films to be deposited. Thus the films were<br />
deposited by technique mentioned above nano scale pores<br />
and nano Scale Island like structures can be obta<strong>in</strong>ed. The<br />
decrease <strong>in</strong> the pore size of a sensor from micron scale to<br />
nano scale provides high efficiency and selectivity about<br />
gas or substance sens<strong>in</strong>g.<br />
Figure 1. Surface morphology of Ru-ZnO th<strong>in</strong> film obta<strong>in</strong>ed by<br />
Atomic Force Microscopy (AFM) technique<br />
Electrical parameters of pure ZnO and Ru doped ZnO<br />
films will be determ<strong>in</strong>ed by us<strong>in</strong>g conductivity<br />
measurement. Optical transmittance and reflectance<br />
spectra will also be measured <strong>in</strong> the wavelength range of<br />
325–800 nm by us<strong>in</strong>g V-530 JASCO UV/VIS<br />
Spectrophotometer. Based on these data, optical<br />
parameters are calculated accord<strong>in</strong>g to well-known<br />
formulas [6]. F<strong>in</strong>ally us<strong>in</strong>g of resistance and capacitance<br />
measurement techniques will be used for the<br />
characterization of the gas sens<strong>in</strong>g properties (such as<br />
sensitivity, selectivity, and time responses).<br />
The authors are <strong>in</strong>debted to State Plann<strong>in</strong>g Foundation<br />
(DPT) and Dokuz Eylul University for f<strong>in</strong>ancial support.<br />
*Correspond<strong>in</strong>g author: HTmurat_bektas3585@hotmail.comT<br />
[1] T. Ivanova, A. Harizanova, T. Koutzarova, B. Vertruyen, ,<br />
Materials Letters, <strong>in</strong> press, 2010<br />
[2] M. Yang, D. Wang, L. Peng, Q. Zhao, Y. L<strong>in</strong>, X. Wei,<br />
Sensors and Actuators B 117 (2006) 80–85<br />
[3] E. Celik, U. Aybarc, M. F. Ebeoglugil, I. Birlik, O. Culha, , J<br />
Sol-Gel Sci Technol (2009) 50:337–347<br />
[4] H.-W. Ryu, B.-S. Park, S. A. Akbar, W.-S. Lee, K.-J.<br />
Hong,Y.-J. Seo, D.-C. Sh<strong>in</strong>, J.-S. Park, G.-P. Choi, Sensors and<br />
Actuators B 96 (2003) 717–722<br />
[5] S. C. Navale , V. Ravi, I.S. Mulla, Sensors and Actuators B<br />
139 (2009) 466–470<br />
[6] M. Caglar, et.al., Applied Surface Science 255 (2009) 4491–<br />
4496<br />
6th Nanoscience and Nanotechnology Conference, zmir, 2010 339