Photonic crystals in biology
Photonic crystals in biology
Photonic crystals in biology
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Poster Session, Tuesday, June 15<br />
Theme A1 - B702<br />
CeO x /Al 2 O 3 th<strong>in</strong> films on Sta<strong>in</strong>less Steel substrate-new understand<strong>in</strong>g of the surface states by<br />
dynamic X-ray Photoelectron spectroscopy<br />
Ival<strong>in</strong>a Avramova* and Sefik Suzer<br />
Department of Chemistry, Bilkent University, Ankara 06800, Turkey<br />
Abstract— The CeO X /Al 2 O 3 th<strong>in</strong> films on sta<strong>in</strong>less steel substrate have been a sbject of the <strong>in</strong>vestigation under electrical<br />
stimuli by us<strong>in</strong>g XPS.<br />
The cont<strong>in</strong>uously <strong>in</strong>creas<strong>in</strong>g requirement for the properties<br />
of the materials with possible catalytic or electronic<br />
applications is a motivation for develop<strong>in</strong>g of new technique<br />
for their deposition and better understand<strong>in</strong>g of surface state<br />
manners. Cerium dioxide (CeO 2 ) has been of great <strong>in</strong>terest<br />
dur<strong>in</strong>g the last years due to its multiple applications <strong>in</strong> several<br />
key areas of th<strong>in</strong> film technology. Ceria has a potential<br />
application <strong>in</strong> the area of optoelectronics [1], the high ionic<br />
conductivity has attracted <strong>in</strong>terest for application as gas<br />
sensors [2] and electrolyte or anode materials for <strong>in</strong>termediate<br />
temperature solid oxide fuel cells [3].<br />
The oxide films of Ce and Al were prepared<br />
electrochemically. The deposition of the films proceeded <strong>in</strong> a<br />
work<strong>in</strong>g electrolyte consist<strong>in</strong>g of saturated absolute univalent<br />
alcohol with different contents of AlCl 3 x 6H 2 O and CeCl 3 x<br />
7H 2 O salts. The cathodic deposition was performed <strong>in</strong> a<br />
voltostatic regime at different form<strong>in</strong>g voltages <strong>in</strong> the <strong>in</strong>terval<br />
3–8 V. The deposition time was 60 m<strong>in</strong>. The cathode substrate<br />
used was a sta<strong>in</strong>less steel (20.0% Cr, 5.0% Al, 0.02% C, and<br />
balance Fe) electrode.<br />
XPS measurements were done us<strong>in</strong>g a K-Apha electron<br />
spectrometer with Al K X-rays (monochromatic). The close<br />
situated filament make available low-energy electrons for<br />
charge neutralization. Samples were electrically connected<br />
through the sample holder, which have been grounded or<br />
subjected to external, square wave pulses <strong>in</strong> the range 10 -3 to<br />
100kHz, dur<strong>in</strong>g record of the X-ray photoelectron spectra.<br />
The electrochemically deposited CeO x /Al 2 O 3 th<strong>in</strong> films on<br />
sta<strong>in</strong>less steel substrate with different amount of Ce load<strong>in</strong>g<br />
have been subjected to square wave pulses with amplitude of<br />
10V dur<strong>in</strong>g record of X-ray photoelectron spectra.<br />
As a result of applied ±10V when frequency changes, the<br />
oxygen, alum<strong>in</strong>ium and cerium photoelectron peaks are split<br />
<strong>in</strong> to a doublet and the resulted B<strong>in</strong>d<strong>in</strong>g Energy (BE)<br />
differences were evaluated.<br />
On Figure 1 are shown the Ce3d photoelectron spectra<br />
recorded at low and high frequency and compared with the<br />
ground one, for the CeOx/Al 2 O 3 th<strong>in</strong> film hav<strong>in</strong>g high Ce<br />
load<strong>in</strong>g. The recorded spectra are complex due to the<br />
presence of Ce 4+ and Ce 3+ states on the surface.<br />
The b<strong>in</strong>d<strong>in</strong>g energy difference at low frequency region less<br />
than 20eV is well pronounced <strong>in</strong> case of low Ce load<strong>in</strong>g see<br />
Figure 2. The sample hav<strong>in</strong>g high Ce load<strong>in</strong>g show less<br />
difference. The BE difference become <strong>in</strong>dependent of<br />
frequency changes and reaches 20eV at high frequency region.<br />
The conductivity of the films changes by the Ce load<strong>in</strong>g,<br />
due to the surplus of Ce 4+ or Ce 3+ or a smaller amount of these<br />
states on the surface of the oxides. When Ce 3+ states are<br />
predom<strong>in</strong>ant on the surface, the th<strong>in</strong> films behave as isolator,<br />
while the <strong>in</strong>crease of Ce 4+ states on the oxide surface makes<br />
the film more conductive.<br />
BE difference, eV<br />
20,2<br />
20,0<br />
19,8<br />
19,6<br />
19,4<br />
19,2<br />
19,0<br />
18,8<br />
18,6<br />
18,4<br />
18,2<br />
1E-4 1E-3 0,01 0,1 1 10 100 1000 10000 100000<br />
frequency, Hz<br />
O1s peak<br />
Al2p peak<br />
Ce3d peak<br />
Figure 2. B<strong>in</strong>d<strong>in</strong>g Energy differences versus frequency for the<br />
CeO x /Al 2 O 3 with low Ce load<strong>in</strong>g on sta<strong>in</strong>less steel substrate.<br />
Ce 4+ Ce 4+ Ce3d<br />
Ce 4+<br />
Ce 4+ 100kHz<br />
Ce 3+ Ce 4+<br />
Ce 3+<br />
Ce 4+<br />
ground<br />
0.001Hz<br />
930 920 910 900 890 880 870 860<br />
BE, eV<br />
* iva@fen.bilkent.edu.tr<br />
[1] Petrova N. L., Todrovska R. V. and Todorovsky D. S., 2006.<br />
Spray-Pyrolysis Deposition of CeO 2 Th<strong>in</strong> Films Us<strong>in</strong>g Citric<br />
Complexes as Start<strong>in</strong>g Materials, Solid Stat. Ion., 177: 613-21.<br />
[2] Durrani S. M. A., Al-Kuhaili M. F., and Bakhtiari I. A., 2008.<br />
Carbon Monoxide Gas-Sens<strong>in</strong>g Properties of Electron-Beam<br />
Deposited Cerium Oxide Th<strong>in</strong> Films, Sens. Actuators B,134: 934-9.<br />
[3] Park J. -Y., Yoon H., and Wachsman E. D., 2005. Fabrication<br />
and Characterization of High-Conductivity Bilayer Electrolytes for<br />
Intermediate-Temperature Solid Oxide Fuel Cells, J. Am. Ceram.<br />
Soc., 88: 2402 -8.<br />
Figure 1. Ce3d spectra at different frequency for the CeO x /Al 2 O 3<br />
with high Ce load<strong>in</strong>g on sta<strong>in</strong>less steel substrate and compared<br />
with the spectrum at ground state.<br />
6th Nanoscience and Nanotechnology Conference, zmir, 2010 271