Photonic crystals in biology

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Poster Session, Tuesday, June 15 Theme A1 - B702 Characterization of Deposited Pd-Zr Thin Films By Moleculer Beam Epitaxy 1 *, Abdullah Cahit Karaoglanli 1 and Esref Avci 3 1 Department of Metallurgy and Materials Engineering, Sakarya 54187, TURKEY 2 Department of Metallurgy and Materials Engi Abstract-The results of MBE growth and annealing of Pd-Zr alloys are described in this study. The thin films of Pd- Zr alloy s have been deposited onto Si wafers.Pd80-20Zr, Pd81-19Zr, Pd83-17Zr and Pd85-15Zr thin films have been pre heated at 60 °C for 1 hour ,in addition we applied heat treatment at 400 °C and 800 °C for 24 hours. The characterization of the manufactured thin films before and after heat treatment processes have been performed by scanning electron microscopy (SEM), X-ray diffractometer (XRD) and EDX analysis. Molecular beam epitaxy is also used for the deposition of some types of semiconductors. MBE (molecular beam epitaxy) techniques allow the epitaxial growth of different compounds. Doping of Si molecular beam epitaxy (MBE) layers at low growth temperatures is a widely accepted method[1].The atoms or molecules in the gas deposit on the substrate to form the growing solid layer. Typically, each element is delivered in a separately controlled beam, so the choice of elements and their relative concentrations may be adjusted for any given layer, thereby defining the composition and electrical characteristics of that layer layer composition[2]. In this study, the thin films of Pd-Zr alloys have been deposited onto Si wafers. We used for the substrate [111]- oriented Si single crystal wafers. Pd80-20Zr, Pd81-19Zr, Pd83-17Zr and Pd85-15Zr thin films were pre heated at 60 °C for 1 hour. In adition to this, we applied to the samples a heat treatment at 400 °C and 800 °C for 24 hours. The characterization of the manufactured thin films before and after heat treatment processes have been performed by scanning electron microscopy (SEM), X-ray diffractometer (XRD) and EDX analysis. The results of analysis showed that nanocrystallines has been modificated in the range of 400 °C and 800 °C. This study was supported by Forschungzentrum Karlsruhe, *Corresponding author: eliftastaban@gmail.com [1] [Thompson, K.D. Hobart, M.E. Twigg, S.L. Rommel, N. Jin, P.R. Berger, R. Lake, A.C.Seabaugh, P.H. Chi, D.S. Simons, Thin Solid Films 380 (2000) 145., [2] www.veeco.com 6th Nanoscience and Nanotechnology Conference, zmir, 2010 278
P Poster Session, Tuesday, June 15 Theme A1 - B702 Langmuir–Blodgett Films of Tripodal-oxy-Schiff Base 1 1 1 1 Ulkay Hilal GabberUP P*, Ziya Erdem KoçP P, Leyla GürfidanP P, Ozlem OuzhanP P, Mustafa ErsözP 1 PSelcuk University Department of Chemistry Campus 42075 Konya Turkey, 1 Abstract-In this study, self-assembled monolayers (SAMs) of Schiff base on Si wafer was obtained through a Langmuir Blodgett method between [2,4,6-tris(p-formylphenoxy)-1,3,5-triazine] (TRIPOD) and 3-amonopropyl trimethoxysilane (APTES). The surfaces parameters where analyzed by contact angle measurement sand atomic force microscopy (AFM), surface infrared spectroscopy (FTIR) etc. An important class of compounds consists of substituted s-triazine derivatives which have anticancer, antitumor, antiviral and antifungal activity. These compounds have been used in the treatment of depression and hence gained a considerable importance. These are valuable bases for estrogen receptor modulators and are also used as bridging agents to synthesize herbicides and in the production of drugs or polymers [1]. In this study, we were synthesized of tripodal-oxy-Schiff base derivatived which was named [2,4,6-tris(pformylphenoxy)-1,3,5-triazine]. Monolayers of schif base derivative was formed at the air/water interface using the Langmuir technique and was then investigated by onto Si wafers and studied using microscopic and spectroscopic methods. Silane monolayer is prepared on Si wafer surfaces using the techniques of Langmuir Blodgett deposition and solid liquid chemical adsorption. Two methods are commonly used to prepare silanized surfaces: Langmuir–Blodgett deposition and solution adsorption [2]. The Langmuir–Blodgett technique offers the advantage of maintaining accurate control over surface pressure during the deposition process. The LB technique is a valuable method to produce ultra-thin films. LB technology is known as a useful method for the formation of welloriented film of bio/organic material on a solid substrate, because it can control the degree of order [3]. LB films are fabricated by passing a substrate through the surface of an aqueous subphase on which is floating and ordered monomolecular organic layer. A film deposition is called reactive if there are strong intermolecular interactions between the monolayer and the substrate or between the depositing monolayer and the previously deposited monolayer [4]. Langmuir–Blodgett deposition was performed for selected compressed films. The substrates were Si wafers that were pretreated with an oxidizing mixture o 50:50 hydrogen peroxide and sulfuric acid for 15 min followed by rinsing with Milli-Q water. In each case, deposition was performed immediately after the target pressure was attained. Varying surface pressures were used during deposition, and deposition speeds between 5 and 10 mm/min were used. In each case only a single molecular layer was deposited, and the corresponding transfer ratio was recorded. A 250 μl of solution is spread over a LB at air/water interface and a time of 30 min is allowed for solvent evaporation. The surface pressure against area/molecule isotherm was recorded using simple fitler paper. The transfer pressure is also controlled. In summary, this study demonstrates the construction of self-assembled arrays of silica particles on the micro- and nanopatterns reflecting the structures of the functionalized si wafer fabricated from LB films. The silica particles on the patterns of the functionalized templates are strongly adsorbed due to the electrostatic interaction between the amino groups of silica particles and the functional groups on the Schiff bases. The present method will be important in the fabrication of nanoparticles at the micrometer/nanometer length scale for the applications to sensors, photonic materials, optoelectronic materials and catalysts. This project was supported by To COST 43 and TUBITAK, (Grant No: TBAG-U/182 (106T718). *Corresponding author: HTihilalg@gmail.comT [1] Z.E. Koc and H. I. Ucan, transit. Met. Chem, 32 597 (2007). [2] K. Paso, R. M.L. Helberg, S. Raae, J. Sjoblom, Journal of Colloid and Interface Science 325 228 (2008). [3] J. Cabaj, J. Sooducho, A. Nowakowska-Oleksy, Sensors and Actuators B 143 508 (2010). [4] L.Y. Zhang, M. P. Srinivasan, Coll. Surf. A: Physicochem. Eng. Asp. 193 15 (2001). 6th Nanoscience and Nanotechnology Conference, zmir, 2010 279
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