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Photonic crystals in biology

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P<br />

Poster Session, Tuesday, June 15<br />

Theme A1 - B702<br />

Langmuir–Blodgett Films of Tripodal-oxy-Schiff Base<br />

1<br />

1<br />

1<br />

1<br />

Ulkay Hilal GabberUP P*, Ziya Erdem KoçP P, Leyla GürfidanP P, Ozlem OuzhanP P, Mustafa ErsözP<br />

1<br />

PSelcuk University Department of Chemistry Campus 42075 Konya Turkey,<br />

1<br />

Abstract-In this study, self-assembled monolayers (SAMs) of Schiff base on Si wafer was obta<strong>in</strong>ed through a Langmuir Blodgett method<br />

between [2,4,6-tris(p-formylphenoxy)-1,3,5-triaz<strong>in</strong>e] (TRIPOD) and 3-amonopropyl trimethoxysilane (APTES). The surfaces parameters<br />

where analyzed by contact angle measurement sand atomic force microscopy (AFM), surface <strong>in</strong>frared spectroscopy (FTIR) etc.<br />

An important class of compounds consists of substituted<br />

s-triaz<strong>in</strong>e derivatives which have anticancer, antitumor,<br />

antiviral and antifungal activity. These compounds have<br />

been used <strong>in</strong> the treatment of depression and hence ga<strong>in</strong>ed<br />

a considerable importance. These are valuable bases for<br />

estrogen receptor modulators and are also used as bridg<strong>in</strong>g<br />

agents to synthesize herbicides and <strong>in</strong> the production of<br />

drugs or polymers [1].<br />

In this study, we were synthesized of tripodal-oxy-Schiff<br />

base derivatived which was named [2,4,6-tris(pformylphenoxy)-1,3,5-triaz<strong>in</strong>e].<br />

Monolayers of schif base<br />

derivative was formed at the air/water <strong>in</strong>terface us<strong>in</strong>g the<br />

Langmuir technique and was then <strong>in</strong>vestigated by onto Si<br />

wafers and studied us<strong>in</strong>g microscopic and spectroscopic<br />

methods. Silane monolayer is prepared on Si wafer<br />

surfaces us<strong>in</strong>g the techniques of Langmuir Blodgett<br />

deposition and solid liquid chemical adsorption.<br />

Two methods are commonly used to prepare silanized<br />

surfaces: Langmuir–Blodgett deposition and solution<br />

adsorption [2]. The<br />

Langmuir–Blodgett technique offers the advantage of<br />

ma<strong>in</strong>ta<strong>in</strong><strong>in</strong>g accurate control over surface pressure dur<strong>in</strong>g<br />

the deposition process. The LB technique is a valuable<br />

method to produce ultra-th<strong>in</strong> films. LB technology is<br />

known as a useful method for the formation of welloriented<br />

film of bio/organic material on a solid substrate,<br />

because it can control the degree of order [3]. LB films are<br />

fabricated by pass<strong>in</strong>g a substrate through the surface of an<br />

aqueous subphase on which is float<strong>in</strong>g and ordered<br />

monomolecular organic layer. A film deposition is called<br />

reactive if there are strong <strong>in</strong>termolecular <strong>in</strong>teractions<br />

between the monolayer and the substrate or between the<br />

deposit<strong>in</strong>g monolayer and the previously deposited<br />

monolayer [4]. Langmuir–Blodgett deposition was<br />

performed for selected compressed films. The substrates<br />

were Si wafers that were pretreated with an oxidiz<strong>in</strong>g<br />

mixture o 50:50 hydrogen peroxide and sulfuric acid for<br />

15 m<strong>in</strong> followed by r<strong>in</strong>s<strong>in</strong>g with Milli-Q water. In each<br />

case, deposition was performed immediately after the<br />

target pressure was atta<strong>in</strong>ed. Vary<strong>in</strong>g surface pressures<br />

were used dur<strong>in</strong>g deposition, and deposition speeds<br />

between 5 and 10 mm/m<strong>in</strong> were used. In each case only a<br />

s<strong>in</strong>gle molecular layer was deposited, and the<br />

correspond<strong>in</strong>g transfer ratio was recorded.<br />

A 250 μl of solution is spread over a LB at air/water<br />

<strong>in</strong>terface and a time of 30 m<strong>in</strong> is allowed for solvent<br />

evaporation. The surface pressure aga<strong>in</strong>st area/molecule<br />

isotherm was recorded us<strong>in</strong>g simple fitler paper. The<br />

transfer pressure is also controlled.<br />

In summary, this study demonstrates the construction of<br />

self-assembled arrays of silica particles on the micro- and<br />

nanopatterns reflect<strong>in</strong>g the structures of the functionalized<br />

si wafer fabricated from LB films. The silica particles on<br />

the patterns of the functionalized templates are strongly<br />

adsorbed due to the electrostatic <strong>in</strong>teraction between the<br />

am<strong>in</strong>o groups of silica particles and the functional groups<br />

on the Schiff bases. The present method will be important<br />

<strong>in</strong> the fabrication of nanoparticles at the<br />

micrometer/nanometer length scale for the applications to<br />

sensors, photonic materials, optoelectronic materials and<br />

catalysts.<br />

This project was supported by To COST 43 and<br />

TUBITAK, (Grant No: TBAG-U/182 (106T718).<br />

*Correspond<strong>in</strong>g author: HTihilalg@gmail.comT<br />

[1] Z.E. Koc and H. I. Ucan, transit. Met. Chem, 32 597<br />

(2007).<br />

[2] K. Paso, R. M.L. Helberg, S. Raae, J. Sjoblom, Journal of<br />

Colloid and Interface Science 325 228 (2008).<br />

[3] J. Cabaj, J. Sooducho, A. Nowakowska-Oleksy, Sensors<br />

and Actuators B 143 508 (2010).<br />

[4] L.Y. Zhang, M. P. Sr<strong>in</strong>ivasan, Coll. Surf. A: Physicochem.<br />

Eng. Asp. 193 15 (2001).<br />

6th Nanoscience and Nanotechnology Conference, zmir, 2010 279

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