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Photonic crystals in biology

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Poster Session, Tuesday, June 15<br />

Theme A1 - B702<br />

Preparat ion and characterization of CdSe, ZnSe, CuSe, th<strong>in</strong> films depos ited by t he successive ionic<br />

layer adsorption and reaction (SILAR) method<br />

B. Gü zeld ir 1 *, A. A 1 and M. S 1<br />

1 Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey<br />

Abstract-In this study, the CdSe, ZnSe,CuSe th<strong>in</strong> films have been directly formed on n- type Si by means of Succesive Ionic Layer Adsorption<br />

and Reaction (SILAR) method at room temperature. The films characterized by X-ray diffraction (XRD), scann<strong>in</strong>g electron microscopy (SEM)<br />

and energy dispersive X-ray analysis (EDAX). The SEM and XRD studies showed that films are covered well with glass and n-type Si substrates<br />

and exhibit polycrystall<strong>in</strong>e characterization. The EDAX spectra showed that the expected elements exist <strong>in</strong> the th<strong>in</strong> films.Some of the th<strong>in</strong> film<br />

with equal distribution of gra<strong>in</strong>s, mostly fall<strong>in</strong>g <strong>in</strong> nanometer regime, was clearly seen. Accord<strong>in</strong>g to the optical characterization, <strong>in</strong> the future, it<br />

can be used solar-cell studies, rectify<strong>in</strong>g contacts, <strong>in</strong>tegrated circuits, the other electronic devices and so on.<br />

Th<strong>in</strong> films can be deposited with different methods onto<br />

semiconductor substrates. The one of these method is<br />

succesive ionic layer adsorption and reaction (SILAR)<br />

method. Relatively simple, quick, economical and suitable for<br />

large area deposition of any configuration, the SILAR method<br />

was reported <strong>in</strong> mid-1980s [1]. It does not require<br />

sophisticated <strong>in</strong>struments, the substrate need not be conductive<br />

and have a high melt<strong>in</strong>g po<strong>in</strong>t [2]. It applies the same soft<br />

growth conditions as cehmical bath deposition (CBD). The<br />

difference between CBD and SILAR is that <strong>in</strong> SILAR the<br />

growth is performed layer by layer by dipp<strong>in</strong>g the substrate<br />

sequentially <strong>in</strong>to stable percursor solutions and r<strong>in</strong>s<strong>in</strong>g <strong>in</strong><br />

between the unadsorbed ions from the surface [3]. S<strong>in</strong>gle<br />

SILAR deposition cycle <strong>in</strong>volves the immersion of the<br />

substrate alternately <strong>in</strong> cationic and anionic precursor<br />

solutions and r<strong>in</strong>s<strong>in</strong>g between every two consecutive<br />

immersions with deionized water to avoid homogeneous<br />

precipitation <strong>in</strong> the solution, so that only the tightly adsorbed<br />

layer stays on the substrate. The adsorption is a surface<br />

phenomenon occurr<strong>in</strong>g due to attractive force between ions<br />

and surface of substrate. This attractive force is of Van der<br />

Waals type that basically orig <strong>in</strong>ates due to the residual or<br />

unbalanced force present <strong>in</strong> the substrate. Thus, ad-atoms can<br />

be hold<strong>in</strong>g on the surface of the substrate by that residual force<br />

[4, 5].<br />

In this study, the SILAR method was used to deposition of<br />

CdSe, ZnSe, CuSe th<strong>in</strong> films on n- type Si. These films were<br />

<strong>in</strong>vestigated by XRD, SEM and EDAX measurement<br />

techniques. One SILAR cycle conta<strong>in</strong>ed four steps: (i) the<br />

substrate was immersed <strong>in</strong>to first reaction conta<strong>in</strong><strong>in</strong>g the<br />

aqueous cotion precusor, (ii) r<strong>in</strong>sed with water, (iii) immersed<br />

<strong>in</strong>to the anion solution, and (iv) r<strong>in</strong>sed with water. Repeated<br />

these cycles, a solid solution CdSe, ZnSe, CuSe th<strong>in</strong> films<br />

with desired thickness and composition were grown.<br />

The X-ray diffraction patterns are analysed to obta<strong>in</strong> the<br />

structual <strong>in</strong>formation of th<strong>in</strong> film. The spectrophotometer is<br />

used to carry out the optical absorption and transmission<br />

studies of the film <strong>in</strong> the wavelength range. It was seen fro m<br />

the XRD patterns that the CdSe, ZnSe, CuSe films were<br />

polycrystall<strong>in</strong>e with orientation along diffrent planes and<br />

phases. The th<strong>in</strong> film on Si substrate shows improvement <strong>in</strong><br />

crystall<strong>in</strong>ty. Such <strong>in</strong>crease <strong>in</strong> crystall<strong>in</strong>ty for Si substrate is<br />

attributed to the s<strong>in</strong>gle crystall<strong>in</strong>e nature of Si substrate.<br />

Scann<strong>in</strong>g electron microscopy is well- known the surface<br />

study<strong>in</strong>g morphology of metals <strong>in</strong> th<strong>in</strong> film form. It was<br />

observed that the as-deposited CdSe, ZnSe, CuSe th<strong>in</strong> films<br />

were well coverages without cracks or p<strong>in</strong>holes to the<br />

substrates.<br />

One of the important applications of the SEM is the<br />

analiztaion of the elemental composition of a material. This<br />

microanalization mode of SEM replied upon the monitor<strong>in</strong>g<br />

X-rays emitted by surface of the sample under electron<br />

irradiation. These X-rays are collected and analyzed to give<br />

<strong>in</strong>formation on the elemental compounds present <strong>in</strong> the<br />

sample. This technique is called as EDAX and can be used to<br />

detect elements of the periodic table with an atomic number<br />

greater than eleven. The EDAX spectras show that the<br />

expected elements detected <strong>in</strong> the th<strong>in</strong> films. The elemental<br />

analysis was carried out only for Cd, Zn, Cu, Se and the<br />

average atomic percentages were found. Also, small<br />

percentage of the other elements were present <strong>in</strong> the th<strong>in</strong> films.<br />

It is thought that these elements may probably result from Si<br />

used as substrate.<br />

In summary, the SILAR method was used to deposit CdSe,<br />

ZnSe, CuSe th<strong>in</strong> films on Si subsrate. Structural properties of<br />

these th<strong>in</strong> film were <strong>in</strong>vestigated by XRD, SEM and EDAX<br />

methods. The films were found to have polycrystall<strong>in</strong>e,<br />

homogeneous and covered the substrates well. The<br />

quantitative analysis of the films were carried out by us<strong>in</strong>g<br />

EDAX technique and it was determ<strong>in</strong>ed that expected<br />

elements were present <strong>in</strong> the th<strong>in</strong> films. .Some of the th<strong>in</strong> film<br />

with equal distribution of gra<strong>in</strong>s, mostly fall<strong>in</strong>g <strong>in</strong> nanometer<br />

regime, was clearly seen We would also like to acknowledge<br />

under Grant No.<br />

TBAG-108T500.<br />

*Correspond<strong>in</strong>g author: 1Tbguzeldir84@gmail.com<br />

[1] M. Ristov, G. J. Sa<strong>in</strong>d<strong>in</strong>ovski, I. Grazdanov, Th<strong>in</strong> Solid Films 123<br />

63. (1985)<br />

[2] Y. F. Nicolau, Appl. Surf. Sci., 22 1061. (1985)<br />

[3] J. Puiso, S. Tamulevicius, G. Laukaitis, S. L<strong>in</strong>ross, M. Leskela, V.<br />

Snitka, Th<strong>in</strong> Solid Films, 403 457. (2002)<br />

[4] R. S. Patil, C. D. Lokhande, R. S. Mane, H. M. Pathan, Oh-Shim<br />

Joo, Sung-Hwan Han, M aterials Science and Eng. B, 129 227 (2006)<br />

[5] Biswajit Ghosh, Madhumita Das, Pushan Banerjee and Subrata<br />

Das, Semiconductor Science And Techonolgy, 23 1250123 (2008)<br />

6th Nanoscience and Nanotechnology Conference, zmir, 2010 384

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