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Poster Session, Tuesday, June 15<br />

Theme A1 - B702<br />

Synthesis and Characterization of ternary PbS x Se 1-x th<strong>in</strong> films via Electrochemical Co-deposition<br />

Methods<br />

Fatma Bayrakçeken, Ümit Demir, Tuba Öznülüer*<br />

Department of Chemistry, Arts and Sciences Faculty, Atatürk University, Erzurum 25240, Turkey<br />

Abstract - Th<strong>in</strong> films of PbS x Se 1-x were electrodeposited on Au (1 1 1) substrates by us<strong>in</strong>g a practical electrochemical method, based on<br />

the simultaneous underpotential deposition (UPD) of Pb, S and Se from the same solution conta<strong>in</strong><strong>in</strong>g Pb(CH 3 COO) 2 ,SeO 2 ,Na 2 S and<br />

EDTA at a constant potential. PbS x Se 1-x nanofilms were characterizated by X-ray diffraction (XRD), atomic force microscopy (AFM),<br />

FTIR spectroscopy techniques. AFM, XRD, and FTIR results revelead that ternary lead chalcogenide nanofilms hav<strong>in</strong>g high crystall<strong>in</strong>ity<br />

were deposited at a k<strong>in</strong>etically preferred (200) orientation on the Au (111) substrates.<br />

The lead salts (PbS, PbSe and PbTe) and their alloys are<br />

narrow band gap semiconductors which have been studied <strong>in</strong><br />

the field of IR detection and thermoelectric devices [1].<br />

More recently, further <strong>in</strong>terest <strong>in</strong> the different lead-salt alloys<br />

has been created as a result of experiment <strong>in</strong> high-resolution<br />

spectroscopy and <strong>in</strong> air pollution measurement us<strong>in</strong>g tunable<br />

lead-salt diyote lasers. In addition to <strong>in</strong>frared detectors and<br />

emitters, narrow gap semiconductors have potential<br />

application <strong>in</strong> magnetoresistive and Hall effect devices as<br />

well as <strong>in</strong> thermoelectric devices.<br />

Emphasis is placed on the ternary alloy systems of PbS x Se 1-x ,<br />

Pb 1-x Sn x Se, PbSn 1-x Se and Hg 1-x Cd x Te due to scope for<br />

regulation of their physico-chemical properties through<br />

variation of composition. It is possible to vary such<br />

electrophysical characteristics as type of conductivity<br />

concentration of ma<strong>in</strong> current carrier, band gap (E g ) etc.<br />

Individually, both the lead salt compounds PbS and PbSe<br />

have been widely used as radiation dedectors sensitive to<br />

near-<strong>in</strong>frared wavelengths[2]. Mixed compounds of the form<br />

PbS x Se 1-x, however, offer potentially useful dedectors of<br />

<strong>in</strong>termediate wavelength, broad band, and perhaps unique<br />

response. Lead chalcogenides films have been prepared by<br />

atomic layer epitaxy (ALE), chemical bath deposition<br />

(CBD), and electrochemical deposition[3]. Demir et al. have<br />

recently reported atom-by-atom electrochemical<br />

codeposition method to prepare PbS[4], ZnS[5] and CdS[6]<br />

th<strong>in</strong> films on Au(111). In this study, we also have shown that<br />

the highly oriented PbS x Se 1-x th<strong>in</strong> films have been<br />

successfully prepared by an electrochemical co-deposition<br />

method, which based on the upd or surface-limited reaction<br />

of Pb, Se and S at pH 4.5. The appropriate co-deposition<br />

potentials based on the underpotential deposition (upd)<br />

potentials of Pb, Se and S have been determ<strong>in</strong>ed by the<br />

cyclic voltammetric studies. The films were grown from an<br />

electrolyte of 2.5 mMPb(CH 3 COO) 2 ,2 mM Na 2 S, 0.3 mM<br />

SeO 2 and EDTA <strong>in</strong> acetate buffer (pH 4.5) at a potential of<br />

-0.02 V vs. Ag|AgCl (3 M KCl).<br />

The bandgap values of the PbS x Se 1-x films were<br />

determ<strong>in</strong>ed by absorbance measurement <strong>in</strong> the wavelength<br />

range 1280-5000 nm us<strong>in</strong>g Fourier transform <strong>in</strong>frared<br />

spectrophotometer. X-ray diffraction patterns were used to<br />

determ<strong>in</strong>e the sample quality, crystal structure and lattice<br />

parameter of the films. PbS x Se 1-x th<strong>in</strong> films were found to be<br />

s<strong>in</strong>gle crystall<strong>in</strong>e <strong>in</strong> nature as confirmed by XRD patterns<br />

and have a predom<strong>in</strong>antly rock salt (NaCl) structure<br />

(Figure 1). The morphological <strong>in</strong>vestigation of PbS x Se 1-x<br />

films revealed that the film growth follows a 3D nucleation<br />

and growth mechanism. In conclusion, morphology and<br />

structure analyses confirm that high-quality ternary th<strong>in</strong><br />

films could be prepared by this UPD-based electrochemical<br />

technique.<br />

Intensity/ a.u.<br />

PbSe xS 1-x (200)<br />

Au(111)<br />

20 25 30 35 40 45 50 55 60<br />

2/deg<br />

Figure 1. XRD patterns of PbSe x S 1-x th<strong>in</strong> film on Au (111)<br />

electrode after potential controlled deposition at -400 mV, pH 4.5;<br />

(a) 30 m<strong>in</strong>utes and (b) 1 hour.<br />

*Correspond<strong>in</strong>g author: toznuluer@gmail.com<br />

[1]S. Kumar, M. Hussa<strong>in</strong>, P. T. Sharma, M. Husa<strong>in</strong> Journal of<br />

Physics and Chemistry of Solids 64, 367 (2003)<br />

[2]B. A. Riggs J. Electrochem. Soc. 107, 708 (1967).<br />

[3]M. Alanyalioglu., F. Bayrakceken, Ü. Demir, Electrochim. Acta<br />

105, 10588 (2009)<br />

[4]T. Oznuluer, I.Erdogan, I.Sisman and U Demir Chemistry of<br />

Materials 17, 935 (2005)<br />

[5] T. Oznuluer, I.Erdogan, I.Sisman and U Demir Lagmuir 22,<br />

4415 (2006)<br />

[6] İ.Sisman,M.Alanyalioglu and Ü.Demir J.Phys.Chem.C 111,<br />

2670 (2007)<br />

b<br />

a<br />

6th Nanoscience and Nanotechnology Conference, zmir, 2010 269

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