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Photonic crystals in biology

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Poster Session, Tuesday, June 15<br />

Theme A1 - B702<br />

Effect of Ru and Al substitutions on sol-gel derived ZnO th<strong>in</strong> films.<br />

M. Bektas 1,2, ,M.Erol 1,2 *, O. Sancakoglu 1,2 , M. Faruk Ebeoglugil 1,2 and Erdal Celik 1,2<br />

1 Dokuz Eylul University, Department of Metallurgical and Materials Eng<strong>in</strong>eer<strong>in</strong>g, 35160 Buca, Izmir- Turkey.<br />

2 Izmir-<br />

Turkey.<br />

Abstract-In this study, ZnO th<strong>in</strong> films were deposited on glass substrates via sol-gel technique for sensor applications. Transparent solutions<br />

were prepared from Zn, Ru, Al based precursors. The solutions were deposited on glass substrates by us<strong>in</strong>g sp<strong>in</strong> coat<strong>in</strong>g technique which<br />

provides th<strong>in</strong> and smooth films. Deposited films were dried at 300 o C for 10 m<strong>in</strong> <strong>in</strong> order to remove hydrous and volatile content,<br />

subsequently to remove organic content films were heat treated at 500 o C for 5 m<strong>in</strong> and then they were annealed at 600 o C for 1 hour to<br />

obta<strong>in</strong> ZnO based films <strong>in</strong> air atmosphere. F<strong>in</strong>ally the surface morphology and roughness of the films were determ<strong>in</strong>ed via AFM (atomic<br />

force microscopy) and profilometer respectively. The phase structure was determ<strong>in</strong>ed by XRD.<br />

The importance of z<strong>in</strong>c oxide (ZnO), among other metal<br />

oxides, is <strong>in</strong>creas<strong>in</strong>g due to many applications. Th<strong>in</strong> films<br />

of z<strong>in</strong>c oxide comb<strong>in</strong>e <strong>in</strong>terest<strong>in</strong>g properties such as nontoxicity,<br />

good electrical properties, high lum<strong>in</strong>ous<br />

transmittance, excellent substrate adherence, hardness,<br />

optical and piezoelectric behaviour and its low price. ZnO<br />

has relatively high physical and chemical stabilit ies, and<br />

hence it has many high temperature applications [1].<br />

Z<strong>in</strong>c oxide (ZnO) is an important multifunctional<br />

material with applications such as transistors, gas sensors,<br />

solar cells, nanocantilevers, etc [3]. Although efforts are<br />

cont<strong>in</strong>u<strong>in</strong>g for CO gas sens<strong>in</strong>g us<strong>in</strong>g the hetero structure of<br />

SnO2 and ZnO [2], experimental results on pure ZnO for<br />

CO sens<strong>in</strong>g is lack<strong>in</strong>g and it may be related to rapid gra<strong>in</strong><br />

growth and densification. For gas sensors, it is necessary<br />

to have a porous microstructure with small particle size<br />

yield<strong>in</strong>g large ratio of the surface area to the bulk [2].<br />

Th <strong>in</strong> film sensors (the film thickness is typically less<br />

than 1 μm) are of <strong>in</strong>terest because of their relatively small<br />

size and low power consumption. In accordance to the<br />

parameters above, sens<strong>in</strong>g capacity is related to the<br />

microstructure and phase structure of the films. By this<br />

way small additions of substitutional elements to the films<br />

which effects the microstructure and sens<strong>in</strong>g capacity.<br />

For the high conductivity and good optical<br />

transmittance, 1TAl-doped ZnO (AZO) films have drawn<br />

considerable attention for transparent conduct<strong>in</strong>g<br />

electrodes. Undoped ZnO usually conta<strong>in</strong>s various<br />

<strong>in</strong>tr<strong>in</strong>sic defects such as Zn vacancies, <strong>in</strong>terstitial Zn, O<br />

vacancies, <strong>in</strong>terstitial O, and antisite O (O Zn ). These<br />

<strong>in</strong>tr<strong>in</strong>sic defects form either acceptor level or donor level<br />

<strong>in</strong> the band gap that would greatly affect the lum<strong>in</strong>escent<br />

properties of ZnO . By <strong>in</strong>troduc<strong>in</strong>g extr<strong>in</strong>sic dopant Al, the<br />

defect environment is changed whether the Al atom<br />

substitutes the z<strong>in</strong>c atom or it occupies the <strong>in</strong>terstitial site<br />

[4]. Undoped ZnO responses perceptibly to LPG while Ru<br />

doped sample highly senses ethanol vapors [5]. Scientific<br />

studies about this topic po<strong>in</strong>t out that substitution causes<br />

change <strong>in</strong> the electrical properties and particle size. Also<br />

substitution is important <strong>in</strong> selective sens<strong>in</strong>g of gases or<br />

substances.<br />

In this research; pure, Ru and Al substituted ZnO th<strong>in</strong><br />

film were deposited on glass substrates. A sol-gel route<br />

was derived to produce th<strong>in</strong> films. The precursors which<br />

were used to produce sols were listed <strong>in</strong> Table 1.<br />

Sp<strong>in</strong> coat<strong>in</strong>g technique provides nanoscale and smooth<br />

films to be deposited. Thus the films were deposited by<br />

technique mentioned above nano scale pores and nano<br />

scale island like structures can be obta<strong>in</strong>ed. The decrease<br />

<strong>in</strong> the pore size of a sensor from micron scale to nano scale<br />

provides high efficiency and selectivity about gas or<br />

substance sens<strong>in</strong>g.<br />

Table 1. Chemicals used to produce ZnO th<strong>in</strong> films.<br />

Precursor Amount Precursor Amount<br />

ZnCl2 0,225 g Methanol 8 mL<br />

AlCl3 0,012 g Glacial Acetic Acid 0,5 mL<br />

RuCl 3 0,011 g Triethanolam<strong>in</strong>e(TEA) 0,5 mL<br />

In order to deposit th<strong>in</strong> films on to the glass substrates<br />

sp<strong>in</strong> coat<strong>in</strong>g technique was employed. The coat<strong>in</strong>g regime<br />

was represented <strong>in</strong> Figure 1.<br />

Cycles (rpm)<br />

1000<br />

800<br />

600<br />

400<br />

200<br />

0<br />

0 20 40 60 80 100 120<br />

Time (sec.)<br />

Figure 1. Sp<strong>in</strong> coat<strong>in</strong>g regime of solutions<br />

F<strong>in</strong>ally the structure, morphology, electronic properties,<br />

gas sens<strong>in</strong>g capacities will be accompanied by us<strong>in</strong>g x-ray<br />

diffractometer (XRD) and energy dispersive spectroscopy<br />

attached scann<strong>in</strong>g electron microscopy (SEM-EDS),<br />

atomic force microscopy (AFM) <strong>in</strong> details.<br />

The authors are <strong>in</strong>debted to State Plann<strong>in</strong>g Foundation<br />

(DPT) and Dokuz Eylul University for f<strong>in</strong>ancial support.<br />

*Correspond<strong>in</strong>g author: m.erol@deu.edu.tr<br />

[1] T. Ivanova, A. Harizanova, T. Koutzarova, B. Vertruyen,<br />

Study of ZnO sol–gel films: Effect of anneal<strong>in</strong>g<br />

[2] Hyun-Wook Ryu, Bo-Seok Park, Sheikh A. Akbar, Woo-Sun<br />

Lee, Kwang-Jun Hong,Youn-J<strong>in</strong> Seo, Dong-Charn Sh<strong>in</strong>, J<strong>in</strong>-<br />

Seong Park, Gwang-Pyo Choi, ZnO sol–gel derived porous film<br />

for CO gas sens<strong>in</strong>g, Sensors and Actuators B 96 (2003) 717–722<br />

[3] M<strong>in</strong> Yang, Dejun Wang, Liang Peng, Qidong Zhao, Yanhong<br />

L<strong>in</strong>, Xiao Wei, Surface photocurrent gas sensor with properties<br />

dependent on<br />

Ru(dcbpy)2(NCS)2-sensitized ZnO nanoparticles, Sensors and<br />

Actuators B 117 (2006) 80–85<br />

[4] M<strong>in</strong>gsong Wang, Ka Eun Lee, Sung Hong Hahn, Eui Jung<br />

Kim,Sunwook Kim, J<strong>in</strong> Suk Chung, Eun Woo Sh<strong>in</strong>, Ch<strong>in</strong>ho<br />

Park, Optical and photolum<strong>in</strong>escent properties of sol-gel Aldoped<br />

ZnO th<strong>in</strong> films, Materials Letters 61 (2007) 1118–1121<br />

[5] Shalaka C. Navale , V. Ravi, I.S. Mulla, Investigations on Ru<br />

doped ZnO: Stra<strong>in</strong> calculations and gas sens<strong>in</strong>g study, Sensors<br />

and Actuators B 139 (2009) 466–470.<br />

6th Nanoscience and Nanotechnology Conference, zmir, 2010 282

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