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246 Appendix D. Site Reports—Japan which are themselves each comprised of several sections. These divisions, their constituent sections, and their respective leaders are as follows: Physical Science Division (Dr. Hajime Shimizu) Fundamental Physics Section (Dr. Shuji Abe) Exotic Matter Physics Section (Dr. Hiroyuki Oyanagi) Electron Physics Section (Dr. Hajime Shimizu) Applied Physics Section (Dr. Shin-ichi Kuroda) Materials Science Division (Dr. Kazuo Arai) Materials Fundamentals Section (Dr. Hideyo Okushi) Nonequilibrium Materials Section (Dr. Akihisa Matsuda) Quantum Materials Section (Dr. Sadahumi Yoshida) Superconducting Materials Section (Dr. Hideo Ihara) Optoelectronic Materials Section (Dr. Toshiro Tani) Electron Devices Division (Dr. Tsunenori Sakamoto) Device Functions Section (Dr. Shigeki Sakai) Device Synthesis Section (Dr. Toshihiro Sekigawa) Process Fundamentals Section (Dr. Keizo Shimizu) Micro-Beam Section (Dr. Masanori Komuro) Microstructure Electronics Section (Dr. Kazuhiko Matsumoto) Superconductivity Electronics Section (Dr. Akira Toukairin) Supermolecular Science Division (Dr. Tetsuo Moriya) Molecular Physics Section (Dr. Hiroshi Yokoyama) Molecular Electronics Section (Dr. Hideaki Shimizu) Molecular and Cellular Neuroscience Section (Dr. Toshio Iijima) After an introduction to the ETL, our host, Dr. Tsunenori Sakamoto, Director of the Electron Devices Division, kindly provided answers to the questions posed by the WTEC panel prior to its visit. He said that his researchers are focusing on a single-electron device that can operate at room temperature (“smaller is better”) using scanning tunneling microscopy (STM) and electron-beam fabrication technologies, but he indicated that they were not yet successful. ETL is seven years into its 10-year Quantum Functional Device (QFD) Project (1990-2000), having spent about $40 million so far, with $8-9 million per annum anticipated for the
Appendix D. Site Reports—Japan 247 remainder of the project. According to Dr. Sakamoto, the proposals for the direction of ETL’s work come “randomly” from industry, university, laboratory researchers, and MITI officials. His division expects a follow-on project on one-electron devices, and he also indicated that MITI has begun a new five-year project on fullerenes/nanotubes in Tsukuba at the National Materials Laboratory with funding of $20-30 million for five years. Collaborations between ETL and the U.S. National Institute of Standards and Technology exist in the areas of STM and liquid crystals. Technical presentations and laboratory visits followed. The laboratory facilities at ETL are extensive and excellent. They are typical of a mature and well funded research establishment in that all the necessary equipment is available, but the excesses have been avoided of other newer laboratories the panel visited, where there sometimes seemed to be more new expensive equipment than people to use it effectively. Dr. Sakamoto continued with a description of some research activities at ETL on nanotechnology. He described an STM nanooxidation process for creating a one-electron device showing quantum blockade behavior. The process consists of an STM tip with a water droplet between it and a 3 nm thick layer of Ti on an SiO 2 layer on an Si substrate. TiO x is formed at the STM tip/H 2 O/Ti interface. ETL researchers are also doing this on stepped alpha-Al 2 O 3 substrates. This technology has now flowed into other laboratories. Dr. Masanori Komuro then described an electron-beam writer with a 3 nm diameter beam in ultrahigh vacuum—UHV (10 -9 torr). Since the normal resolution of polymer resists (e.g., PMMA) with electron-beam lithography and a 50 keV electron gun is about 10-20 nm, higher resolution is needed. His staff report being able to do much better, yielding smaller features, with SiO 2 films using electron beam lithography. A single-electron transistor, written by W dots or wires from WF 6 using electron-assisted deposition, was reported to operate at 230 K. Dr. Junji Itoh, standing in for Dr. Seigo Kanemaru (Senior Researcher in the Electron Devices Division), then reported on nanostructure activities in the area of vacuum microelectronics. Work was being carried out to create ultraminiature field-emitter tips (Mo, Si) for field emission displays. The tips have about 10 nm radii, can be created in two-dimensional arrays, and show increased emission levels. Because of problems with the stability of emission currents in conventional tips from reduced gas adsorption from the ambient atmosphere, development of MOSFET-structured emitter tips is being pursued, which will enable the combination of light emission and Si-based electronics on the same device structures. Next, Dr. Hiroshi Yokoyama, Leader of the Molecular Physics Section, described ETL’s Scanning Maxwell-stress Microscope (SMM), a new
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National Science and Technology Cou
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WTEC Panel on NANOSTRUCTURE SCIENCE
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ABSTRACT This report reviews the st
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Foreword Timely information on scie
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Foreword iii collaboration and thus
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Contents Foreword Table of Contents
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List of Figures 1.1 Organization of
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List of Figures ix 5.12 Granular GM
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List of Tables ES.1 Technological I
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Executive Summary Richard W. Siegel
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Executive Summary xix past decade,
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Executive Summary xxi TABLE ES.2. C
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Executive Summary xxiii blocks, and
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Chapter 1 Introduction and Overview
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1. Introduction and Overview 3 •
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1. Introduction and Overview 5 worl
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1. Introduction and Overview 7 grow
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1. Introduction and Overview 9 lead
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1. Introduction and Overview 11 2.
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1. Introduction and Overview 13 It
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Chapter 2 Synthesis and Assembly Ev
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2. Synthesis and Assembly 17 transi
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2. Synthesis and Assembly 19 probe
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2. Synthesis and Assembly 21 by adj
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2. Synthesis and Assembly 23 blocks
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2. Synthesis and Assembly 25 Self-A
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2. Synthesis and Assembly 27 Figure
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2. Synthesis and Assembly 29 us to
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2. Synthesis and Assembly 31 Brotzm
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2. Synthesis and Assembly 33 Siegel
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Chapter 3 Dispersions and Coatings
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3. Dispersions and Coatings 37 exis
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3. Dispersions and Coatings 39 more
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3. Dispersions and Coatings 41 into
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3. Dispersions and Coatings 45 oppo
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3. Dispersions and Coatings 47 Kanz
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Chapter 4 High Surface Area Materia
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4. High Surface Area Materials 51 w
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4. High Surface Area Materials 53 F
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4. High Surface Area Materials 55 T
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4. High Surface Area Materials 57 s
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4. High Surface Area Materials 59 T
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4. High Surface Area Materials 61 F
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4. High Surface Area Materials 63 m
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4. High Surface Area Materials 65 I
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Chapter 5 Functional Nanoscale Devi
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5. Functional Nanoscale Devices 69
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Chapter 6 Bulk Behavior of Nanostru
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6. Bulk Behavior of Nanostructured
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Chapter 7 Biologically Related Aspe
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7. Biologically Related Aspects of
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Chapter 8 Research Programs on Nano
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8. Research Programs on Nanotechnol
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APPENDICES Appendix A. Biographies
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Appendix A. Biographies of Panelist
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Appendix B. Site Reports—Europe S
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Appendix B. Site Reports—Europe 1
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Appendix E. Site Reports—Taiwan O
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Appendix F. Glossary 2DEG A/D AAAR
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Appendix F. Glossary 329 ESPRIT ESR
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Appendix F. Glossary 331 MA MBE mCP
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Appendix F. Glossary 333 PVDF QCA Q
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Appendix F. Glossary 335 WTEC XAS X
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