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252 Appendix D. Site Reports—Japan Dr. Yano also described work on novel polysilicon transistors (Fig. D.6) and on ladder-shaped memory cell arrays based on single-electron transistors (Fig. D.7). The WTEC team’s hosts were pessimistic about single-electron logic, stating that reliability requirements are severe. They stated that memory is different—it is possible to use conventional CMOS circuitry to insert different cell structures. S dot channel D Figure D.5. Single electron memory concept. gate oxide 3 nm Si nitride silicon nitride oxide Figure D.6. Polysilicon transistors. word line 15V 0V ’1’ ’0’ 0V 5V 5V D S D S read 2.5 V, erase -10 V, write, 15 V 0=0.01 nA, 10 seconds, slow writing time at 9 V w/erase 10 µsec, still slower than DRAM showed 10 7 write/erase cycles Figure D.7. Ladder-shaped memory cell array.
Appendix D. Site Reports—Japan 253 Site: Institute for Molecular Science (IMS) Okazaki National Research Institutes (ONRI) Myodaiji, Okazaki 444, Japan Tel: (81) 564-55 7240; Fax: (81) 564-55 5245 Date Visited: 23 July 1997 WTEC: Hosts: L. Jelinski (report author) Dr. Mitsuo Ito, Director-General Dr. Mitsuhiko Shionoya, Professor Dr. Makoto Fujita, Associate Professor Dr. Takahiro Kusukawa, Assistant Professor Dr. Tatsuhisa Kato, Associate Professor Dr. Kyuya Yakushi, Professor Dr. Yoshihito Watanabe, Professor BACKGROUND The Institute for Molecular Science (IMS) is one of three institutes under the umbrella of the Okazaki National Research Institutes. The other two are the National Institute for Basic Biology and the National Institute for Physiological Sciences. Together, they employ over two hundred professionals and about 180 technical and support staff. Each of the three Institutes is headed by a Director-General, who reports to the President. The Institutes are funded by the Ministry of Education, Science, Sports, and Culture (Monbusho). RESEARCH AND DEVELOPMENT HIGHLIGHTS Research at IMS is directed toward understanding the properties of molecules and molecular assemblies, and to the design and synthesis of new materials, especially those with novel properties. IMS is strongly oriented toward basic research. The faculty members have few teaching duties and can devote themselves full-time to research. IMS has an unusual, almost Harvard-like method for ensuring that research remains fresh and of high quality: it imposes the rule that none of the assistant and associate professors can remain at IMS as full professors. Instead, they must go to another institution for promotion, as IMS always hires its full professors from outside. The faculty members with whom I
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National Science and Technology Cou
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WTEC Panel on NANOSTRUCTURE SCIENCE
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ABSTRACT This report reviews the st
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Foreword Timely information on scie
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Foreword iii collaboration and thus
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Contents Foreword Table of Contents
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List of Figures 1.1 Organization of
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List of Figures ix 5.12 Granular GM
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List of Tables ES.1 Technological I
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Executive Summary Richard W. Siegel
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Executive Summary xix past decade,
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Executive Summary xxi TABLE ES.2. C
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Executive Summary xxiii blocks, and
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Chapter 1 Introduction and Overview
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1. Introduction and Overview 3 •
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1. Introduction and Overview 5 worl
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1. Introduction and Overview 7 grow
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1. Introduction and Overview 9 lead
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1. Introduction and Overview 11 2.
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1. Introduction and Overview 13 It
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Chapter 2 Synthesis and Assembly Ev
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2. Synthesis and Assembly 17 transi
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2. Synthesis and Assembly 19 probe
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2. Synthesis and Assembly 21 by adj
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2. Synthesis and Assembly 23 blocks
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2. Synthesis and Assembly 25 Self-A
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2. Synthesis and Assembly 27 Figure
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2. Synthesis and Assembly 29 us to
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2. Synthesis and Assembly 31 Brotzm
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2. Synthesis and Assembly 33 Siegel
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Chapter 3 Dispersions and Coatings
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3. Dispersions and Coatings 37 exis
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3. Dispersions and Coatings 39 more
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3. Dispersions and Coatings 41 into
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3. Dispersions and Coatings 43 of N
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3. Dispersions and Coatings 45 oppo
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3. Dispersions and Coatings 47 Kanz
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Chapter 4 High Surface Area Materia
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4. High Surface Area Materials 51 w
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4. High Surface Area Materials 53 F
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4. High Surface Area Materials 55 T
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4. High Surface Area Materials 57 s
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4. High Surface Area Materials 59 T
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4. High Surface Area Materials 61 F
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4. High Surface Area Materials 63 m
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4. High Surface Area Materials 65 I
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Chapter 5 Functional Nanoscale Devi
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5. Functional Nanoscale Devices 69
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Chapter 6 Bulk Behavior of Nanostru
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6. Bulk Behavior of Nanostructured
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Chapter 7 Biologically Related Aspe
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7. Biologically Related Aspects of
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Chapter 8 Research Programs on Nano
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8. Research Programs on Nanotechnol
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APPENDICES Appendix A. Biographies
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Appendix A. Biographies of Panelist
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Appendix B. Site Reports—Europe S
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Appendix B. Site Reports—Europe 1
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Appendix E. Site Reports—Taiwan O
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Appendix E. Site Reports—Taiwan 3
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Appendix F. Glossary 2DEG A/D AAAR
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Appendix F. Glossary 329 ESPRIT ESR
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Appendix F. Glossary 331 MA MBE mCP
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Appendix F. Glossary 333 PVDF QCA Q
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Appendix F. Glossary 335 WTEC XAS X
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