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314 Appendix E. Site Reports—Taiwan TABLE E.2. Current State of IC Product Technology in Taiwan Item Taiwan’s Level Leading Country Leading-edge Technology Level DRAM 64 M (R&D) 16 M (production) Japan, Korea 1G (papers published) 256 M (production) SRAM 4 M (pilot run) 1 M (production) Japan 64 M (papers published) 16 M (production) ROM Introduction of 64 M mask ROM in 1994 by UMC Japan Introduction of 64 M mask ROM by Sharp Flash Memory 4 M Flash (production) 16 M Flash (pilot run) U.S., Japan 64 M/256 M Flash (R&D) 32 M (production) MCU 4 bit, 8 bit U.S. 16 bit (production) 32 bit (announced) MPU RISC CPU U.S. RISC: 64 bit 200 MIPS A/D D/A converter A/D: 8 bit, 20 MHz D/A: 8 bit, 120 MHz U.S., Europe A/D: 8 bit, 650 MHz D/A: 8 bit, 100 MHz Power IC Discrete bipolar Discrete MOS Japan, Europe Smart power
Appendix E. Site Reports—Taiwan 315 Site: National Taiwan University (NTU) 1, Sec. 4, Roosevelt Rd. Taipei, Taiwan ROC Date Visited: 16 April 1997 WTEC: Hosts: D. Shaw (report author) Prof. C.Y. Mou, Department of Chemistry Fax: (886) 2-3636359 Prof. S.F. Cheng, Department of Chemistry BACKGROUND NTU is widely considered to be the most prestigious university in Taiwan. The first university on the island, established nearly 100 years ago, it is also the most renowned and the most competitive university in Taiwan. NTU alumni play key leadership roles in all levels of government, industry, and academia. I met with about a dozen professors from various departments (Chemistry, Chemical Engineering, Physics, and Electrical Engineering) and had an informal exchange of information on nanoparticle technology. DISCUSSION During the discussions, it became clear that R&D on nanoparticle technology is generally new on campus. All the departments represented at this meeting are considered to be large departments, having more than 50 faculty members. Most of the research in the Electrical Engineering Department covers traditional silicon-based IC processing with some limited optoelectronic device studies. Research programs on submicron photoresistance are being initiated by the Department of Chemical Engineering, while programs on quantum lasers are being conduced by the newly established Institute of Optoelectrical Engineering. A project in the Chemistry Department is of interest to nanostructure scientists: “Synthesis and Application of Mesoporous Molecular Sieves” (Project Principal Investigator, Prof. C.Y. Mou; Co-Principal Investigators, Prof. S.F. Cheng, Prof. P.Y. Wan, and Dr. S.P. Liu). The investigators have successfully synthesized mesoporous aluminosilicate MCM-41, which consists of hexagonal arrays of nanometer-sized cylindrical pores (Science
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National Science and Technology Cou
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WTEC Panel on NANOSTRUCTURE SCIENCE
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ABSTRACT This report reviews the st
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Foreword Timely information on scie
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Foreword iii collaboration and thus
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Contents Foreword Table of Contents
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List of Figures 1.1 Organization of
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List of Figures ix 5.12 Granular GM
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List of Tables ES.1 Technological I
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Executive Summary Richard W. Siegel
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Executive Summary xix past decade,
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Executive Summary xxi TABLE ES.2. C
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Executive Summary xxiii blocks, and
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Chapter 1 Introduction and Overview
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1. Introduction and Overview 3 •
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1. Introduction and Overview 5 worl
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1. Introduction and Overview 7 grow
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1. Introduction and Overview 9 lead
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1. Introduction and Overview 11 2.
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1. Introduction and Overview 13 It
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Chapter 2 Synthesis and Assembly Ev
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2. Synthesis and Assembly 17 transi
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2. Synthesis and Assembly 19 probe
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2. Synthesis and Assembly 21 by adj
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2. Synthesis and Assembly 23 blocks
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2. Synthesis and Assembly 25 Self-A
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2. Synthesis and Assembly 27 Figure
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2. Synthesis and Assembly 29 us to
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2. Synthesis and Assembly 31 Brotzm
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2. Synthesis and Assembly 33 Siegel
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Chapter 3 Dispersions and Coatings
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3. Dispersions and Coatings 37 exis
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3. Dispersions and Coatings 39 more
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3. Dispersions and Coatings 41 into
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3. Dispersions and Coatings 43 of N
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3. Dispersions and Coatings 45 oppo
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3. Dispersions and Coatings 47 Kanz
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Chapter 4 High Surface Area Materia
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4. High Surface Area Materials 51 w
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4. High Surface Area Materials 53 F
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4. High Surface Area Materials 55 T
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4. High Surface Area Materials 57 s
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4. High Surface Area Materials 59 T
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4. High Surface Area Materials 61 F
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4. High Surface Area Materials 63 m
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4. High Surface Area Materials 65 I
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Chapter 5 Functional Nanoscale Devi
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5. Functional Nanoscale Devices 69
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Chapter 6 Bulk Behavior of Nanostru
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6. Bulk Behavior of Nanostructured
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Chapter 7 Biologically Related Aspe
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7. Biologically Related Aspects of
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Chapter 8 Research Programs on Nano
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8. Research Programs on Nanotechnol
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APPENDICES Appendix A. Biographies
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Appendix A. Biographies of Panelist
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Appendix B. Site Reports—Europe S
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Appendix B. Site Reports—Europe 1
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Appendix C. European Roundtable Dis
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Appendix D. Site Reports—Japan OV
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Appendix D. Site Reports—Japan 24
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Page 353 and 354: Appendix F. Glossary 2DEG A/D AAAR
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Page 357 and 358: Appendix F. Glossary 331 MA MBE mCP
Page 359 and 360: Appendix F. Glossary 333 PVDF QCA Q
Page 361 and 362: Appendix F. Glossary 335 WTEC XAS X
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