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250 Appendix D. Site Reports—Japan RESEARCH AND DEVELOPMENT HIGHLIGHTS Dr. M. Miyao discussed the enhanced emission of light from SiGe quantum well devices, relating the quality of light emission with the quality of the interfaces of the quantum well, and the correlation lengths between Ge atoms. Dr. T. Katsuyama gave a presentation on exciton-polariton quantum wave devices, achieved through confinement of excitons within quantum wires. He discussed a number of novel ways of forming the quantum wires. One method involved the formation of Au islands on GaAs or InAs surfaces. Upon heating, these Au dots formed liquid alloys of In/Au or Ga/Au. For substrates immersed in an arsine/trimethylgallium ambient, the liquid droplets provided the nucleation points for the selective growth of compound semiconductor whiskers (or quantum wires) as long as 1.5 µm, with a 15 nm diameter. Dr. A. Kikukawa discussed some ways of achieving ultrahigh density recording using indentation by an atomic force microscope (AFM) tip (Fig. D.1). In addition to the recording of data through AFM indentation, read-out by AFM was also characterized. Dr. Kikukawa claimed a read-out rate of 1.25 MB/s with a 25 nm pit size. Dr. M. Futamoto gave an excellent presentation on ‘near-term’ issues for improved materials for magnetic storage. He showed some examples of materials control at the nanostructure scale required for the formation of magnetic materials suitable for magnetic recording and novel magnetic “spin valves” (Fig. D.2). He showed charts on trends in recording areal density (Fig. D.3) and perpendicular recording using CoCrTa (Fig. D.4). 100% nano-indentation (AFM) yield magnetic modification 60 nm 120 nm AFM field evaporation optical modification Figure D.1. Concept for high density data recording using nano-indentation (Hitachi).
Appendix D. Site Reports—Japan 251 50Å Ta 300Å CrMnPt 30Å Co 25Å Cu 10Å Co 50Å NiFe 50Å Ta Figure D.2. Spin valve structure. 1G 1M DRAM stills multimedia motion picture storage 1M 1G 1T Figure D.3. Need for storage capacity, in bytes (Hitachi). CoCrTa silicon Ti controls structure of magnetic layer amorphous CrTi Figure D.4. Perpendicular recording using CoCrTa (Hitachi). Dr. K. Yano discussed single-electron transistor (SET) memory schemes (Fig. D.5) where quantum dots would form the gate of the device. He described a memory cell (0.8 µm x 0.5 µm) comprising the SETs, using a 2.5 V signal to carry out the ‘reading’ of the information bit, 10 V to erase a bit, and 15 V to write a bit. Although 10 7 write and erase cycles have been demonstrated, the operation of this memory cell is still rather slow (on the order of microseconds). Dr. Yano suggested that SET technology might be more easily demonstrated in memory devices, rather than in logic devices.
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National Science and Technology Cou
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WTEC Panel on NANOSTRUCTURE SCIENCE
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ABSTRACT This report reviews the st
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Foreword Timely information on scie
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Foreword iii collaboration and thus
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Contents Foreword Table of Contents
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List of Figures 1.1 Organization of
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List of Figures ix 5.12 Granular GM
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List of Tables ES.1 Technological I
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Executive Summary Richard W. Siegel
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Executive Summary xix past decade,
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Executive Summary xxi TABLE ES.2. C
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Executive Summary xxiii blocks, and
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Chapter 1 Introduction and Overview
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1. Introduction and Overview 3 •
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1. Introduction and Overview 5 worl
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1. Introduction and Overview 7 grow
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1. Introduction and Overview 9 lead
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1. Introduction and Overview 11 2.
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1. Introduction and Overview 13 It
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Chapter 2 Synthesis and Assembly Ev
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2. Synthesis and Assembly 17 transi
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2. Synthesis and Assembly 19 probe
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2. Synthesis and Assembly 21 by adj
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2. Synthesis and Assembly 23 blocks
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2. Synthesis and Assembly 25 Self-A
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2. Synthesis and Assembly 27 Figure
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2. Synthesis and Assembly 29 us to
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2. Synthesis and Assembly 31 Brotzm
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2. Synthesis and Assembly 33 Siegel
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Chapter 3 Dispersions and Coatings
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3. Dispersions and Coatings 37 exis
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3. Dispersions and Coatings 39 more
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3. Dispersions and Coatings 41 into
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3. Dispersions and Coatings 43 of N
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3. Dispersions and Coatings 45 oppo
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3. Dispersions and Coatings 47 Kanz
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Chapter 4 High Surface Area Materia
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4. High Surface Area Materials 51 w
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4. High Surface Area Materials 53 F
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4. High Surface Area Materials 55 T
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4. High Surface Area Materials 57 s
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4. High Surface Area Materials 59 T
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4. High Surface Area Materials 61 F
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4. High Surface Area Materials 63 m
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4. High Surface Area Materials 65 I
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Chapter 5 Functional Nanoscale Devi
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5. Functional Nanoscale Devices 69
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Chapter 6 Bulk Behavior of Nanostru
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6. Bulk Behavior of Nanostructured
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Chapter 7 Biologically Related Aspe
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7. Biologically Related Aspects of
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Chapter 8 Research Programs on Nano
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8. Research Programs on Nanotechnol
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APPENDICES Appendix A. Biographies
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Appendix A. Biographies of Panelist
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Appendix B. Site Reports—Europe S
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Appendix B. Site Reports—Europe 1
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Appendix E. Site Reports—Taiwan O
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Appendix F. Glossary 2DEG A/D AAAR
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Appendix F. Glossary 329 ESPRIT ESR
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Appendix F. Glossary 331 MA MBE mCP
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Appendix F. Glossary 333 PVDF QCA Q
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Appendix F. Glossary 335 WTEC XAS X
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