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312 Appendix D. Site Reports—Japan Comments Strengthening of Japan’s nanotechnology research infrastructure in the past several years has been fueled by both the overall increase of government funding for basic research and by larger numbers of academic and industry researchers choosing nanostructured science/technology as their primary field of research. The main drivers are technological innovation and potential industrial applications, with several exceptions where the driver is scientific curiosity. A system approach has been adopted in most laboratory projects, including multiple characterization methods and processing techniques for the same objective. The university-industry interaction is stimulated by new MITI projects awarded to universities in recent years that encourage use of research personnel from industry. Issues that are being addressed already are more extensive use of peer review, promotion of personnel mobility and intellectual independence, rewarding researchers for patents, promotion of interdisciplinary and international interactions, and better use of the physical infrastructure. The three major government organizations (MITI, STA, and Monbusho) allocated an estimated total of $120 million for nanotechnology in fiscal year 1996.
Appendix E. Site Reports—Taiwan OVERVIEW OF NANOPARTICLE / NANOTECHNOLOGY RESEARCH IN TAIWAN David T. Shaw In 1996, the total product value of integrated circuits (IC) produced in Taiwan reached $7.8 billion. From 1995 to 1997, IC products have grown at an average of 50-60% per year. The current state of IC manufacturing and product technology in Taiwan, as summarized in Tables E.1 and E.2, is two to four years behind the leading countries. However, the technology gap is closing fast as Taiwan invests heavily in nanotechnology R&D. In l996, more than 400 research projects amounting to more than $7 million were supported by the National Science Council in such diverse microelectronic fields as VLSI technology, amorphous silicon, microelectromechanical systems, and electronic packaging. These projects share a common theme: the development of submicron or nanometer technology. TABLE E.1. Current State of IC Manufacturing Technology in Taiwan Item Taiwan’s Level Leading Country Leading-edge Technology Level CMOS 0.25 µm (R&D) 0.35 µm (production) Japan, U.S. 0.18 µm (R&D) 0.25 µm (production) BiCMOS 0.8 µm (production) Japan 0.35 µm (production) 0.25 µm (R&D) Bipolar 2.5 µm Japan 1.0 µm (production) GaAs Circuit design and 0.6 µm process U.S.A., Japan 0.35 µm (R&D) 313
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National Science and Technology Cou
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WTEC Panel on NANOSTRUCTURE SCIENCE
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ABSTRACT This report reviews the st
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Foreword Timely information on scie
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Foreword iii collaboration and thus
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Contents Foreword Table of Contents
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List of Figures 1.1 Organization of
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List of Figures ix 5.12 Granular GM
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List of Tables ES.1 Technological I
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Executive Summary Richard W. Siegel
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Executive Summary xix past decade,
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Executive Summary xxi TABLE ES.2. C
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Executive Summary xxiii blocks, and
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Chapter 1 Introduction and Overview
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1. Introduction and Overview 5 worl
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1. Introduction and Overview 7 grow
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1. Introduction and Overview 9 lead
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Chapter 2 Synthesis and Assembly Ev
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2. Synthesis and Assembly 17 transi
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2. Synthesis and Assembly 21 by adj
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2. Synthesis and Assembly 25 Self-A
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2. Synthesis and Assembly 27 Figure
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2. Synthesis and Assembly 31 Brotzm
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2. Synthesis and Assembly 33 Siegel
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Chapter 3 Dispersions and Coatings
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3. Dispersions and Coatings 37 exis
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3. Dispersions and Coatings 39 more
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3. Dispersions and Coatings 41 into
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3. Dispersions and Coatings 45 oppo
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3. Dispersions and Coatings 47 Kanz
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Chapter 4 High Surface Area Materia
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4. High Surface Area Materials 51 w
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4. High Surface Area Materials 55 T
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4. High Surface Area Materials 57 s
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4. High Surface Area Materials 59 T
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4. High Surface Area Materials 63 m
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Chapter 5 Functional Nanoscale Devi
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5. Functional Nanoscale Devices 69
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Chapter 6 Bulk Behavior of Nanostru
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6. Bulk Behavior of Nanostructured
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Chapter 7 Biologically Related Aspe
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Chapter 8 Research Programs on Nano
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8. Research Programs on Nanotechnol
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APPENDICES Appendix A. Biographies
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Appendix A. Biographies of Panelist
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Appendix B. Site Reports—Europe S
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Appendix B. Site Reports—Europe 1
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Appendix D. Site Reports—Japan OV
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