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286 Appendix D. Site Reports—Japan Site: RIKEN (Institute of Physical and Chemical Research) Frontier Materials Research Semiconductor Laboratory 2-1 Hirosawa Wako-shi Saitama 315-01, Japan Fax: (81) 48-462 4659 Date Visited: 22 July 1997 WTEC: Host: E. Hu (report author) Dr. Aoyagi, Coordinator, Frontier Research Program; Chief, Semiconductor Laboratory Dr. Katsuhiko Fujita, Exotic Nano Materials Group Dr. Takashi Isoshima, Researcher, Biopolymer Physics Lab. Dr. Hideo Yabuki Yoshiro Miki, Director of the Frontier Research Program Division and the Brain Science Planning Office BACKGROUND The Frontier Research Program was set up within the Institute of Physical and Chemical Research (RIKEN) within the Science and Technology Administration to be a more flexible program emphasizing • multidisciplinarity • flexibility, obtained by recruiting researchers with the proper expertise, working under one-year contracts that can be extended (average age of the researchers is 35) • international participation, with non-Japanese team leaders; 1/3 of the participants are from overseas • active recruitment of young researchers • external evaluation by world-class scientists • forum to create new ideas All programs have a fixed lifetime of eight years, extendible, with a midprogram review. The Frontier Materials Research program that the WTEC team visited was in Phase II of its activities. Within the Frontier Materials Research Program were three subareas: (1) the Laboratory for Nano-Electronics Materials (Sugano), (2) the Laboratory for Nano-Photonics Materials (Sasabe), and (3) The Laboratory
Appendix D. Site Reports—Japan 287 for Exotic Nano Materials (Knoll). The emphasis is on basic research, rather than on applications (this was explicitly stated). RESEARCH AND DEVELOPMENT HIGHLIGHTS Dr. Aoyagi gave the WTEC team an introduction to some of his team’s research activities. Quantum wire growth: they used a technique similar to that developed by Kapon for the growth of (primarily) GaAs/AlGaAs and GaP/AlGaP quantum wires. The attempt was to improve that process and gain better control of the growth process, with a higher selectivity of incorporation, using the fact that the growth rates on the (111)A plane is minimal to zero. Measurements were done in a 40 T magnetic field; the researchers expected to observe a diamagnetic shift in the luminescence peak under the high field conditions, and obtained 123 µeV/T 2 for the LH transition and 210 µeV/T 2 for the HH transition. These are far larger shifts than expected (110 µeV/T 2 for bulk and 20 µeV/T 2 for 2-D systems). Aoyagi attributes the discrepancy to the influence of the interaction of the electrons in the wire with the adjacent impurities. Si nanostructure formation: these studies began with amorphous silicon deposited onto Si substrates and annealed in a hydrogen or nitrogen ambient. The result was the formation of Si nanocrystals, ~ 7 nm in size, embedded within an amorphous matrix. Emission in the blue was observed, with about 10 -5 stated efficiency. Emission at 420 nm and 380 nm was observed. Simulations have been carried out to look at the effects of confinement on the relative regions of the amorphous and crystalline areas (Figure D.8). amorphous 2.17 nm crystalline 2.72 nm Figure D.8. Effects of confinement on the relative regions of the amorphous and crystalline areas.
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National Science and Technology Cou
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WTEC Panel on NANOSTRUCTURE SCIENCE
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ABSTRACT This report reviews the st
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Foreword Timely information on scie
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Foreword iii collaboration and thus
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Contents Foreword Table of Contents
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List of Figures 1.1 Organization of
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List of Figures ix 5.12 Granular GM
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List of Tables ES.1 Technological I
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Executive Summary Richard W. Siegel
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Executive Summary xix past decade,
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Executive Summary xxi TABLE ES.2. C
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Executive Summary xxiii blocks, and
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Chapter 1 Introduction and Overview
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1. Introduction and Overview 3 •
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1. Introduction and Overview 5 worl
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1. Introduction and Overview 7 grow
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1. Introduction and Overview 9 lead
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1. Introduction and Overview 11 2.
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1. Introduction and Overview 13 It
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Chapter 2 Synthesis and Assembly Ev
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2. Synthesis and Assembly 17 transi
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2. Synthesis and Assembly 19 probe
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2. Synthesis and Assembly 21 by adj
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2. Synthesis and Assembly 23 blocks
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2. Synthesis and Assembly 25 Self-A
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2. Synthesis and Assembly 27 Figure
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2. Synthesis and Assembly 29 us to
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2. Synthesis and Assembly 31 Brotzm
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2. Synthesis and Assembly 33 Siegel
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Chapter 3 Dispersions and Coatings
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3. Dispersions and Coatings 37 exis
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3. Dispersions and Coatings 39 more
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3. Dispersions and Coatings 41 into
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3. Dispersions and Coatings 43 of N
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3. Dispersions and Coatings 45 oppo
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3. Dispersions and Coatings 47 Kanz
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Chapter 4 High Surface Area Materia
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4. High Surface Area Materials 51 w
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4. High Surface Area Materials 53 F
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4. High Surface Area Materials 55 T
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4. High Surface Area Materials 57 s
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4. High Surface Area Materials 59 T
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4. High Surface Area Materials 61 F
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4. High Surface Area Materials 63 m
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4. High Surface Area Materials 65 I
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Chapter 5 Functional Nanoscale Devi
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5. Functional Nanoscale Devices 69
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Chapter 6 Bulk Behavior of Nanostru
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6. Bulk Behavior of Nanostructured
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Chapter 7 Biologically Related Aspe
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7. Biologically Related Aspects of
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Chapter 8 Research Programs on Nano
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8. Research Programs on Nanotechnol
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APPENDICES Appendix A. Biographies
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Appendix A. Biographies of Panelist
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Appendix B. Site Reports—Europe S
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Appendix B. Site Reports—Europe 1
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Page 353 and 354: Appendix F. Glossary 2DEG A/D AAAR
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Page 361 and 362: Appendix F. Glossary 335 WTEC XAS X
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