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304 Appendix D. Site Reports—Japan A. Kurobe, Advanced Research Laboratory “Study of Shapes Produced by Stranski-Krastanov Growth in Cold-Walled UHV-CVD” With a silicon buffer, hut-shaped Ge dots with (001 x 010) alignment were obtained. Without a buffer, dome-shaped Ge dots were obtained. Using H-terminated Si wafers by exposure of atomic hydrogen, domes were obtained. The H-free wafers with a prior annealing at 750 o C contained the hut dots. Thermal desorption spectroscopy supports the difference in the surface: Dihydride desorbs at 415 o C. Monohydride desorbs at 550 o C. Annealing at 750 o C removes all H. Atomic hydrogen exposure produces a monohydride surface. The goal is study of interaction of dots with 2DEG. The plan is to move to a SiO 2 -Si system to increase barrier height. K. Inomata, Research and Development Center “Advanced GMR” Working on spin electronics for high density heads, 20 Gbit in 2002 is forecast. Toshiba researchers have achieved >10% GMR ratio in layered films at room temperature. They have also achieved > 30% in nanogranular films with a coercive field of 0.1 T. The most promising approach is the tunnel junction. It has > 25% MR ratio but drawbacks include high resistance and strong fall-off of the magnetoresistance ratio with applied voltage and pinholes in the ultrathin insulator barrier. Dr. Inomata described two structures for possible use in future memory and logic. One new proposed structure consists of two ferromagnetic (FM) layers sandwiching a barrier containing 8 nm granules of FM material in an SiO 2 matrix. The total barrier thickness is about 10 nm. Inomata and coworkers explained that the size and distribution of the FM granules must be carefully controlled. The FM contact polarization can be switched either parallel or antiparallel to the granules and to each other to provide high or low current transport through the barrier. No data were provided. A second proposed structure places the two FM electrodes on the same surface of granular FM materials. This is a transistor structure in which lateral conduction can be controlled by the relative polarization of the contacts. No data were provided.
Appendix D. Site Reports—Japan 305 T. Kawakubo, Materials and Devices Research Laboratories “Epitaxy of Ferroelectric (FE) Materials” The goal of this project is to control FE properties by orientation and strain of the epitaxial material. The researchers use (Sr, Ba)TiO 3 with SrRuO 3 electrodes, which have good metallic conduction. By reducing the thickness and sputter conditions, good performance (saturating hysteresis loop) at 1.0 V has been obtained. This material is also under investigation for DRAM charge storage capacitors. With 20% Ba content, the dielectric constant is about 900. An SiO 2 equivalent thickness of 0.085 nm was obtained. The leakage current was 4 x 10 -8 A/cm 2 between ±1.3 V. This was said to be satisfactory for 0.12 µm DRAM. TiAlN/Pt barrier layers were used. M. Tamatani, Materials and Devices Research Laboratories “Nanoparticle Phosphors Made by Thermal Plasma” This project produces spherical particles compared to faceted particles. These particles have the particle size in the same region as those of commercially available materials. They must be heat treated in oxygen or hydrogen to restore luminescence efficiency comparable to that of the commercial phosphors. The thermal plasma also produces nanoparticle phosphors, which could be used as labeling agents for analysis.
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National Science and Technology Cou
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WTEC Panel on NANOSTRUCTURE SCIENCE
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ABSTRACT This report reviews the st
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Foreword Timely information on scie
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Foreword iii collaboration and thus
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Contents Foreword Table of Contents
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List of Figures 1.1 Organization of
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List of Figures ix 5.12 Granular GM
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List of Tables ES.1 Technological I
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Executive Summary Richard W. Siegel
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Executive Summary xix past decade,
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Executive Summary xxi TABLE ES.2. C
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Executive Summary xxiii blocks, and
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Chapter 1 Introduction and Overview
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1. Introduction and Overview 3 •
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1. Introduction and Overview 5 worl
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1. Introduction and Overview 7 grow
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1. Introduction and Overview 9 lead
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1. Introduction and Overview 11 2.
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1. Introduction and Overview 13 It
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Chapter 2 Synthesis and Assembly Ev
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2. Synthesis and Assembly 17 transi
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2. Synthesis and Assembly 19 probe
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2. Synthesis and Assembly 21 by adj
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2. Synthesis and Assembly 23 blocks
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2. Synthesis and Assembly 25 Self-A
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2. Synthesis and Assembly 27 Figure
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2. Synthesis and Assembly 29 us to
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2. Synthesis and Assembly 31 Brotzm
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2. Synthesis and Assembly 33 Siegel
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Chapter 3 Dispersions and Coatings
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3. Dispersions and Coatings 37 exis
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3. Dispersions and Coatings 39 more
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3. Dispersions and Coatings 41 into
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3. Dispersions and Coatings 43 of N
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3. Dispersions and Coatings 45 oppo
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3. Dispersions and Coatings 47 Kanz
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Chapter 4 High Surface Area Materia
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4. High Surface Area Materials 51 w
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4. High Surface Area Materials 53 F
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4. High Surface Area Materials 55 T
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4. High Surface Area Materials 57 s
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4. High Surface Area Materials 59 T
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4. High Surface Area Materials 61 F
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4. High Surface Area Materials 63 m
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4. High Surface Area Materials 65 I
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Chapter 5 Functional Nanoscale Devi
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5. Functional Nanoscale Devices 69
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Chapter 6 Bulk Behavior of Nanostru
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6. Bulk Behavior of Nanostructured
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Chapter 7 Biologically Related Aspe
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7. Biologically Related Aspects of
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Chapter 8 Research Programs on Nano
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8. Research Programs on Nanotechnol
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APPENDICES Appendix A. Biographies
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Appendix A. Biographies of Panelist
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Appendix B. Site Reports—Europe S
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Appendix B. Site Reports—Europe 1
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Page 353 and 354: Appendix F. Glossary 2DEG A/D AAAR
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Page 357 and 358: Appendix F. Glossary 331 MA MBE mCP
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