Photonic crystals in biology - NanoTR-VI

PPoster Session, Thursday, June 17Theme F686 - N11231Dilatation Fields Of The NiSiR2R/Si Bicrystal1UHülya ÖztürkUP P*PAhi Evran University, Faculty of Sciences and Arts, 40100, Krehir, TurkeyAbstract- The elastic displacement and dilatation fields are derived in the frame of the classical isotropic elasticity theory by using a Fourierseries analysis for the two media, one of the media tends to infinity and the other one has the thickness of h. These two media are supposed toobey classical Hooke’s law and are assumed to be elastically isotropic. The dilatation fields depend on thickness of h. Applications werepresented for the NiSiR2R/Si bicrystal.Because of the fact that the diffusion paths of vacancies andatomic species are orthonormal curves to equi-dilatationsurfaces, it is important to determine the dilatation fields.Several authors have investigated dilatation fields of bicrystals[1-3]. Dilatation fields have been calculated in the twoisotropic media which have biperiodic networks of misfitdislocations in their interfaces. Interfacial dislocationsnetworks produce in each medium the displacement and stressfields whose components can be developed in Fourier series[2,4].Limiting boundary conditions have been investigatedbecause the elasticity problem is too difficult in the generalcase. Along the interface normal forces are transmitted [5-6]and along the free surface there are no applied stresses [7].Therefore, for x 2h the 2 j( j = 1, 2, 3) are zero. Therelative interfacial displacement fields u 1and u vary3linearly versus x and x between two parallel dislocation1 3lines spaced with a , respectively.In this study, partly based on some previous formulations[2,3,8] used for an epitaxial layer deposited on a substrate, itwas present the relative displacement (Figure 1) and dilatation(Figure 2) curves for the NiSiR2R/Si bicrystal.-10.00Dilatation50.0030.0010.00-30.000.00 20. 00 40.00 60.00h (nm)Figure 2. Dilatation for misfit dislocations placed at the interface ofNiSiR2R/Si bicrystal.[(u1+) -(u1-)] (nm)0.200.100.00*Corresponding author: HThozturk@ahievran.edu.trTH[1] Bouzaher A, and Bonnet, R, Phil Mag A, 66 (1992) 823.[2] Bonnet R, Phil Mag A, 73 (1996) 1193.[3] [3] Öztürk, H, Çakan N, Saraçolu H, Soylu S, Bul of Pure and App.Sci, 22D (2003) 101.[4] Bonnet R, Phil Mag A, 43 (1981)1165.[5] Bonnet R, Loubradou M and Pénission J M, Phys Rev Lett, 69(1992)104.[6] Lucas C A, and Loretto D, Appl Phys Lett, 60 (1992) 2071.[7] Mura T, Micromechanics of Defects in Solids, (Kluwer AcademicPubl., Netherlands) (1991) 178.[8] Öztürk H, Trans Indian Inst Met, 60 (2007) 577.-0.10-0.20-20.00 -10.00 0.00 10.00 20.00x1 (nm)Figure 1. Relative displacement along the Ox axis for misfit1dislocations placed at the interface of NiSiR2R/Si bicrystal.6th Nanoscience and Nanotechnology Conference, zmir, 2010 744