PPmaximumPoster Session, Thursday, June 17Theme F686 - N1123An experiment <strong>in</strong>vestigation of GaAs/AlGaAs Solar Cells Efficiency11122ULeyla Baak BüklüUP P*, Aye ErolP P, M. Çet<strong>in</strong> ArikanP P, Ben RoyallPPand Naci BalkanP1PDepartment of Physics, Istanbul University, Istanbul, TurkeyPDepartment of Comput<strong>in</strong>g and Electronic Systems, Essex University, UK2Abstract- In this work, the efficiency of GaAs/AlGaAs solar cell which was formed by a top r<strong>in</strong>g geometry by photolithography methodobta<strong>in</strong>ed. The efficiency and spectral response of the cells were <strong>in</strong>vestigated by I-V measurement and photoconductivity (PC) measurementsrespectively.Solar cell devices based on III-V semiconductors have anefficiency around 30% which is higher than Si based cells.Because the broader part of solar spectrum is covered bythese structures [1]. The band gap of ternary and quaternaryIII-V semiconductors can be tailored chang<strong>in</strong>g alloycompositions for example the band gap energy of GaR1-xRAlRxRAssemiconductors changes from 1,42eV (GaAs) to 2,16eV(AlAs).In this study epitaxially grown n on p GaAs/GaAlAs solarcell structure given <strong>in</strong> Figure 1 has been employed. GaAlAshav<strong>in</strong>g Al concentration of 0,8 was added to the structure <strong>in</strong>order to absorb solar energy start<strong>in</strong>g from 1,6 eV.0,100,080,06Figure 3. I-V set-up3cm8cm13cm18cm23cm28cm33cmI (mA)0,040,020,00-0,020,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7V(Volt)Figure 1. The solar cell structureSolar cell structure was fabricated <strong>in</strong> r<strong>in</strong>g contacts as mesastructures hav<strong>in</strong>g contacts on the top of the structures us<strong>in</strong>gphotolithography techniques as shown <strong>in</strong> Figure 2.Top layer was just for ohmic contacts and <strong>in</strong>terior part ofthe r<strong>in</strong>g removed after r<strong>in</strong>g shaped gold deposition byselectively etch<strong>in</strong>g. Au/Ge:Au/Ni alloy was used as ohmiccontact to n type material on the top, Au:Zn/Au ohmiccontact to p type material at the bottom.Figure 4. I-V characteristic of solar cell has taken depend<strong>in</strong>g on thedistance between sample and UV lampThe efficiency of solar cell calculated us<strong>in</strong>g the equationgiven below.IscVocFF (1)PsWhere R PRs, power; FF, fill factor; IRscR, shortcircuitcurrent; VRoc, Ropen-circuit voltage. Us<strong>in</strong>g Equation 1,the efficiency of the solar cell calculated as 13%.5 35K43PC(a.u.)2Figure 2. Solar cell which formed by photolithographyFabricated structure was mounted on a ceramic holder withgold contact pads that was used for wir<strong>in</strong>g. Sample contactsfrom the top and from the bottom layers were jo<strong>in</strong> to goldpaths by ultrasonic bond<strong>in</strong>g.I-V measurements were taken <strong>in</strong> a light tight box with200W high pressure mercury lamp as shown <strong>in</strong> Figure 3.Obta<strong>in</strong>ed spectrum was taken at different <strong>in</strong>tensities bychang<strong>in</strong>g distance between light source and solar cell. Figure4 shows the obta<strong>in</strong>ed I-V curves were taken at different light<strong>in</strong>tensities by us<strong>in</strong>g <strong>in</strong>verse square law.101,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 3,2Energy(eV)Figure 5. Photoconductivity measurement of solar cell has taken35K, 100mV sensitivity and 100Hz frequencyAs seen from the Figure 5, PC spectrum of solar cell startsabsorb<strong>in</strong>g at 1,5eV and peaks at 1.65eV.In summary, the efficiency of GaAs/AlGaAs structurecalculated from I-V curve and spectral response region wasobta<strong>in</strong>ed.*Correspond<strong>in</strong>g author: lbbuklu@gmail.com[1] A.W. Bett1, F. Dimroth2, G. Stollwerck2, O.V. Sulima,1999, Appl. Phys. A 69, 119–1296th Nanoscience and Nanotechnology Conference, zmir, 2010 652
PPoster Session, Thursday, June 17Theme F686 - N1123Microwave-Assisted Deposition of Microwire Patterns of Metal Nanoparticles1UUursoy OlgunUP P*1PDepartment of Chemistry, Sakarya University, Sakarya 54187, TurkeyAbstract-Nanoparticles were self-assembled as organized microwire patterns on various substrates due to the stick-slip motion of the contactl<strong>in</strong>e dur<strong>in</strong>g the microwave evaporation of solvent. The colloid solutions of 0.03% (w/v) nanoalum<strong>in</strong>um <strong>in</strong> 10% (v/v) poly(dimethylsiloxane)-acetone were used to self-assemble the microwire patterns of Al on glass substrates, which were dipped <strong>in</strong>to the solution and held aga<strong>in</strong>st thewall. Also, the colloids of 0.001% (w/v) nanosilver prepared <strong>in</strong> acetone solution of 33.3% (v/v) chloroform, 16.6% (v/v)poly(dimethylsiloxane) and 0.3% (v/v) Tween-20 were utilized for the deposition of the microwire patterns under the microwave heat<strong>in</strong>g at51-55 °C. The rapid self-assembly process was demonstrated under the microwave and the width of microwires was about 1-20 m depend<strong>in</strong>gon the concentration of the nanoparticles. Process<strong>in</strong>g of particles to produce surface patterns and their th<strong>in</strong> films will be presented.The microwave-assisted self-organization of colloidalparticles <strong>in</strong> conf<strong>in</strong><strong>in</strong>g aqueous droplets was reported for thepreparation of photonic band gap materials [1]. Themicrowave-assisted synthesis and the <strong>in</strong>-situ self-assembly ofcoaxial Ag/C nanocables have been studied [2]. Although themicrowave synthesis of metal nanoparticles has been studied<strong>in</strong> the literature, the microwave process<strong>in</strong>g of the colloids ofmetal nanoparticles has not been <strong>in</strong>vestigated <strong>in</strong> detail. Theevaporation <strong>in</strong>duced self-assembly of zeolite patterns wasreported at room temperature recently [3].Here, the deposition of alum<strong>in</strong>um and silver microwires wasdirected by the evaporation-<strong>in</strong>duced self-assembly ofnanoparticles under the microwave heat<strong>in</strong>g [4]. Compared tothe conventional heat<strong>in</strong>g, the microwave radiation had manyadvantages, such as very short time heat<strong>in</strong>g, homogeneousenergy transfer to the liquid and reduced bubble formation <strong>in</strong>solution. The formation of microwire patterns was due to thestick-slip dynamics of the contact l<strong>in</strong>e on the surface of thesubstrates. By us<strong>in</strong>g the microwave energy, the rapid selfassemblyof the microwires from the metal nanoparticles wasachieved with<strong>in</strong> a few m<strong>in</strong>utes for the first time.The contact l<strong>in</strong>e deposition of nanoparticles has been studiedby several groups to prepare micropatterns of variousmaterials. In this study, the effects of us<strong>in</strong>g microwave heat<strong>in</strong>gwere explored for the first time to accelerate the particledeposition process. As shown <strong>in</strong> Figure 1, the role ofmicrowave dur<strong>in</strong>g the stick-slip motion of contact l<strong>in</strong>e wasFigure 2: The images of nanoalum<strong>in</strong>um and nanosilvermicrowire patterns deposited on glass substrates at 55 C undermicrowave heat<strong>in</strong>g [4].20 °C without heat<strong>in</strong>g, at 40 °C with conventional heat<strong>in</strong>g andat 55 °C with microwave heat<strong>in</strong>g. As demonstrated <strong>in</strong> Figure2, the microwire patterns produced us<strong>in</strong>g the microwaveheat<strong>in</strong>g are very different for nano Al and Ag particles [4].In summary, it was demonstrated that the colloidal selfassemblyof particles under microwave is an efficient methodto produce micropatterns of nanoparticles. The microwiredeposition process presented <strong>in</strong> this study is relatively simplecompare to the previous pattern<strong>in</strong>g techniques. The use ofphotoresist layer, micropatterned mask, monolayer coat<strong>in</strong>gand molded patterns is not required. As a result of thesef<strong>in</strong>d<strong>in</strong>gs, it was concluded that the colloids of alum<strong>in</strong>um andsilver nanoparticles are suitable for the rapid self-assembly ofthe microwire patterns under the microwave heat<strong>in</strong>g.*Correspond<strong>in</strong>g author: HTuolgun@sakarya.edu.trTFigure 1. The mechanism of microwire deposition demonstrated bythe stick-slip dynamics of the contact l<strong>in</strong>e [4].<strong>in</strong>vestigated us<strong>in</strong>g the colloids of nano Al and Ag particles.The colloid solutions of 0.03%(w/v) nanoalum<strong>in</strong>umconta<strong>in</strong><strong>in</strong>g 10%(v/v) PDMS were placed <strong>in</strong> glass vials and thedeposition of microwires on the wall surface was carried out at[1] S.H. Kim, S.Y. Lee, G.R. Yi, D.J. P<strong>in</strong>e, S.M. Yang, J. Am. Chem.Soc. 128, 10897, (2006).[2] J.C. Yu, X.L. Hu, L.B. Quan, L.Z. Zhang, Chem. Commun. 21,2704, (2005).[3] U. Olgun, V. Sev<strong>in</strong>ç, Powder Tech. 183, 207, (2008).[4] U.Olgun. ACS Appl. Mater. Interfaces. 2(1), 28, (2010).6th Nanoscience and Nanotechnology Conference, zmir, 2010 653
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