Photonic crystals in biology - NanoTR-VI

PP lightPoster Session, Thursday, June 17Theme F686 - N1123ZnO/CuR2RO Inorganic Solar Cells1110BYakup HameP P, UTeoman ÖzdalUP P*, Hüseyin arP P, Erdem AslanP1P and Hüsnü nci 1PPMustafa Kemal University, Electric-Electronic Engineering Department, skenderun, Hatay, Turkey1Abstract -In this work thin film photovoltaic produced and investigated. Bilayer structured device has ZnO and CuR2RO inorganic oxide layersas n-type and p-type materials, respectively. Both oxide layers deposited by electrochemical deposition method on to pre cleaned Indium tinoxide (ITO) coated glass substrate. As a top electrode Al thermally coated and ITO/ZnO/CuR2RO/Al structure obtained. Finally, I-V curve of2thin film obtained and investigated by illumination under 100 mW/cmP intensity.There has been an active search for cost-effectivephotovoltaic devices since the development of the first solarcells in the 1950s [1]. A significant fraction of the cost ofsolar panels comes from the photoactive materials andsophisticated, energy-intensive processing technologies.Zinc oxide (ZnO), as a transparent conductive oxide, is oneof the most attractive materials for last several decays. ZnO,has a wide field application for industrial and scientificresearches due to transparent and conductive properties. ZnOhas a big interest because of bandgap of 3.3 eV at T300 KTwhich is an advantage for Toptoelectronic applications.However, ZnO has large exiton-binding energy (T60 meV).ZnO thin films have attracted many researchers to work onbecause of its unique electrical, optical and acousticcharacteristics that making it suitable for various fields ofapplications especially in photovoltaics [2]. ZnO films whichdeposited by ECD method generally obtain in aqueous alkalior neutral zinc salt solvents.Cuprous oxide (CuR2RO), as a non-toxic and active electrodehas a big attractive for photovoltaic applications.CuR2RO semiconductor material has an ability to absorb visiblewavelength with band-gap energy of 2,1 eV. Furthermore, ithas been predicated that CuR2RO is promising for photovoltaicapplications, with a theoretical energy conversion efficiencyof 20% [3]. CuR2RO thin films have been prepared by varioustechniques like thermal oxidation, chemical vapor deposition(CVD), anodic oxidation, reactive sputtering, pulse laserdeposition, electrodeposition, plasma oxidation [4-10].Cathodic electrodeposition of CuR2RO is a good method tocontrol easily the particle size and the film thickness [11].ITO coated glass sonicated in acetone, 2-propanol, ethanoland pure water for 15 minutes respectively. Deposition ofZnO and CuR2RO obtained in a three electrode system. Duringthe deposition, solution unstirred and temperature keptconstant. Finally, Al top electrode thermally coated on todevice as an ohmic contact.Electrical characterization of device obtained under 1002mW/cmPPlight intensity. Current-Voltage (IRSCR-VROCR)measurements of device obtained with Keithley 4200HT-TTSCSTT(semiconductor characterization systemTH). Scanning electronmicroscopy (SEM) image of ZnO layer and estimatedschematic of ITO/ZnO/CuR2RO/Al thin film structure whichfabricated in room temperature given in Figure 1 and Figure 2respectively.Figure 2. ITO/ZnO/CuR2RO/Al structure.In this work ZnO/CuR2RO bilayer solar cell fabricated andelectrical and photovoltaic properties investigated.This work is partially supported by The Scientific andTechnical Research Council of Turkey; with project referenceNumber 107M270.*Corresponding author: HTteomanozdal@hotmail.comT[1] D. M. Chapin, C. S. Fuller, G. L. Pearson, J. Appl. Phys., Vol.25, 676, 1954.[2] T. Pauporte, D. Lincot, Electrochim. Acta, Vol. 45, 3345, 2000.[3] H. Tanaka, T. Shimakawa, T. Miyata, H. Sato, T.Minami, Appl. Surf. Sci. Vol. 244, 568, 2005.[4] S. C. Ray, Solar Energy Materials & Solar Cells, Vol. 68, 307,2001.[5] T. Maruyama, Solar Energy Materials & Solar Cells, Vol. 56, 85,1998.[6] M. Masui, T. Muranoi, R. Urao, Y. Momose, M.R. Islam, and M.Takeuchi, Materials Chem. & Phys., Vol. 43, 283, 1996.[7]HTŠmith, M.TH, Gotovac, V., HTAljinovi, Lj.TH, HTLui-Lavcevi, M.TH,Surface Science, Vol. 335, 171, 1995.[8] T. Mahalingam, J.S.P. Chitra, S. Rajendran, and P.J. Sebastian,Semiconductor Sci. and Tech., Vol. 17, 565, 2002.[9] T.J. Richardson, J.L. Slack, and M.D. Rubin, ElectrochimicaActa, Vol. 46, 2281, 2001.[10] C.A.N. Fernando, P.H.C. de Silva, S.K. Wethasinha, I.M.Dharmadas, T. Delsol, and M.C. Simmonds, Renewable Energy,Vol. 26, 521, 2002.[11] Edited by G. Hode, Electrochemistry of nanomaterials, Wiley-VCH, Weinheim, 2001.Figure 1. SEM image of ZnO layer.6th Nanoscience and Nanotechnology Conference, zmir, 2010 762