PP andPoster Session, Thursday, June 17Theme F686 - N11231TiOR2R Nanofibers Produced by Electrosp<strong>in</strong>n<strong>in</strong>g11UAli E.DenizUP Tamer UyarP P*PUNAM- Institute of Materials Science & Nanotechnology, Bilkent University, Ankara 06800, TurkeyAbstract-TiOR2R nanofibers hav<strong>in</strong>g anatase structure are obta<strong>in</strong>ed by us<strong>in</strong>g electrosp<strong>in</strong>n<strong>in</strong>g technique and its morphology and structure areanalyzed by SEM, EDX, and XRD.Electrosp<strong>in</strong>n<strong>in</strong>g is a versatile and cost-effectivetechnique to produce multi-functional nanofibers fromvarious polymers, sol-gels, metaloxides, ceramics, etc [1].Electrospun nanofibers have several remarkablecharacteristics such as large surface area, nano range poresizes and unique physical and mechanical properties.These superior properties and multi-functionality of thesenanofibers enable them to be used <strong>in</strong> many areas <strong>in</strong>clud<strong>in</strong>gbiotechnology, textiles, filtration, environment and energy[2].Various polymeric nanofibers are produced to be used <strong>in</strong>fuel cells and solar cells [3,4]. By electrosp<strong>in</strong>n<strong>in</strong>gtechnique, not only polymeric nanofibers are created butalso <strong>in</strong>organic nanofibers can also be obta<strong>in</strong>ed. Moreover,these metaloxide nanofibers are very important for energyapplications, for <strong>in</strong>stance, TiOR2R nanofibers can be used isused <strong>in</strong> solar cell applications [5,6].In this study we produced TiOR2R nanofibers byelectrosp<strong>in</strong>n<strong>in</strong>g technique. Titanium dioxide (TiOR2R)nanofibers were obta<strong>in</strong>ed by electrosp<strong>in</strong>n<strong>in</strong>g of the sol-gelsolution, which conta<strong>in</strong>s TiOR2R sol precursor (Titanium(IV)-isopropoxide), polyv<strong>in</strong>ylpyrrolidone (PVP), andsolvent (glacial acetic acid and ethanol). PVP nanofiberswhich <strong>in</strong>clude Titanium (IV)-isopropoxide were calc<strong>in</strong>edat 500 °C for 3 h. After calc<strong>in</strong>ation, organic part (polymer,PVP) was totally removed and TiOR2R nanofibers hav<strong>in</strong>ganatase structure were obta<strong>in</strong>ed. The diameter of the TiOR2Rfibers was <strong>in</strong> the range of 40 nm to 600 nm.*Correspond<strong>in</strong>g author: HTuyar@unam.bilkent.edu.trT[1] Chronakis I-S, 2005 Novel nanocomposites and nanoceramicsbased on polymer nanofibers us<strong>in</strong>g electrosp<strong>in</strong>n<strong>in</strong>g process,Journal of Materials Process<strong>in</strong>g Technolog, 167:283-29 [2]Gre<strong>in</strong>er A., Wendorff J-H., 2007 Electrosp<strong>in</strong>n<strong>in</strong>g: A Fasc<strong>in</strong>at<strong>in</strong>gMethod for the Preparation of Ultrath<strong>in</strong> Fibers, Angew Chem IntEd.,46:5670–5703[3] Chen Y., Guo J., Kim H.,2010 Preparation of poly(v<strong>in</strong>ylidenefluoride) / phosphotungstic acid composite nanofiber membranesby electrosp<strong>in</strong>n<strong>in</strong>g for proton conductivity, Reactive andFunctional Polymers, 70:69-74[4] Chou C., Huang J., Wu C., Lee C., and L<strong>in</strong> C.,2009Lengthen<strong>in</strong>g the polymer solidification time to improve theperformance of polymer/ ZnO nanorod hybrid solar cells, SolarEnergy Materials and Solar Cells, 93:1608-1612[5] Stathatos E., Chen Y., Dionysiou D-D., 2008 Quasi-solidstatedye-sensitized solar cells employ<strong>in</strong>g nanocrystall<strong>in</strong>e TiOR2Rfilms made at low temperature, Solar Energy Materials andSolar Cells, 92:1358-1365 [6] Mane R-S., Hwang Y-H.,Lokhande C-D., Sartale S-D., and Han S., 2005 Roomtemperature synthesis of compact TiOR2R th<strong>in</strong> films for 3-D solarcells by chemical arrested route, Applied Surface Science,246:271-278a) b)Figure 1. a) SEM Image of PVP nanofibers before calc<strong>in</strong>ation b)SEM Image of TiOR2R nanofibers after calc<strong>in</strong>ations.a) b)Figure 2. a) EDX Image of TiOR2 Rnanofibers b) Chemical MapImage of TiOR2R nanofibers. Ti is coloured as a blue colourTAs a conclusion, <strong>in</strong> this study we have succeeded toproduce TTiOR2R nanofibers hav<strong>in</strong>g anatase structure byelectrosp<strong>in</strong>n<strong>in</strong>g technique.T The morphology of the TTiOR2RnanofibersT was exam<strong>in</strong>ed by Scann<strong>in</strong>g ElectronMicroscope (SEM)T. The structural Tcharacterization wasperformed by us<strong>in</strong>g TEnergy dispersive X-ray analysis(EDX) and X-Ray Diffraction (XRD).6th Nanoscience and Nanotechnology Conference, zmir, 2010 757
Poster Session, Thursday, June 17Theme F686 - N1123Plasmonic phase shifts and light-trapp<strong>in</strong>g <strong>in</strong> SOI photodetectors and nc-Si solar cellsMumtaz Murat Arik * , Birol Ozturk, Hui Zhao, Eric SchiffDepartment of Physics, Syracuse University, Syracuse, New YorkAbstract- We report our work on the measurement of photoconductances <strong>in</strong> SOI devices with and without silver nanoparticle layers. Thesilver nanoparticles were fabricated by thermal anneal<strong>in</strong>g of evaporated silver th<strong>in</strong> films and by nanosphere lithography. S<strong>in</strong>ce these devicesare not deposited onto textured substrates, they exhibit prom<strong>in</strong>ent <strong>in</strong>terference fr<strong>in</strong>ges <strong>in</strong> their quantum efficiencies. An important effect thatwe have found <strong>in</strong> both nc-Si:H solar cells and SOI is a shift of the <strong>in</strong>terference fr<strong>in</strong>ges that is <strong>in</strong>duced by the nanoparticle layer. We presentexperiments and calculations <strong>in</strong>dicat<strong>in</strong>g that the fr<strong>in</strong>ge-shift is a consequence of optical phase shifts by surface plasmon resonance of the metalnanoparticles.An <strong>in</strong>terest<strong>in</strong>g alternative to textur<strong>in</strong>g <strong>in</strong> th<strong>in</strong> film solar cellsis "plasmonic" light-trapp<strong>in</strong>g based on specular cells andus<strong>in</strong>g an overlayer of metallic nanoparticles to produce lighttrapp<strong>in</strong>g.While this type of light-trapp<strong>in</strong>g has not yet beendemonstrated for nc-Si:H solar cells, significant photocurrentenhancements have been reported on silicon-on-<strong>in</strong>sulatordevices with similar optical properties to nc-Si:H [1,2].Here, we report our work on plasmonic light-trapp<strong>in</strong>g onsilicon-on-<strong>in</strong>sulator (SOI) photodetectors and nc-Si:H solarcells. We observed that the photocurrent ratios <strong>in</strong> SOIphotodetectors are affected by <strong>in</strong>terference fr<strong>in</strong>ges, which aresubstantially shifted by the metal nanoparticle monolayers.The measurements of the normalized photoconductancespectra for SOI samples are shown <strong>in</strong> the upper panel and<strong>in</strong>set of Fig.1. The gray curves show the correspond<strong>in</strong>gspectra when there was a Ag-np monolayer on top of the LiF. panel of the figure expands on this spectral region. In thelower panel we have plotted the ratio of thephotoconductances with and without the Ag-np film. Thevalue of 11 at 1025 nm is consistent with previous reportssuggest<strong>in</strong>g that the Ag-np film leads to a pronouncedenhancement of photocarrier generation. It is important tonote that the fr<strong>in</strong>ges for the sample with the Ag-np layer are"red shifted" from the fr<strong>in</strong>ges seen without the Ag np film;we have <strong>in</strong>dicated this shift as <strong>in</strong> the figure. This red-shiftmodifies the <strong>in</strong>terpretation of the photocurrent ratio. Thesmooth l<strong>in</strong>es through the photoconductance measurementsPhotoconductanceG/(eF) (10 -3 cm 2 /V)Photoconductance ratio0.40.30.20.10.0108642X 0.5SOI600 8001000 UnprocessedFr<strong>in</strong>ge-averaged+Ag0700 800 900 1000Wavelength (nm)Figure 1. (upper) Normalized photoconductance spectraG p eF for LiF-capped SOI structures with and without a Agnanoparticle film. The <strong>in</strong>set shows the spectra over a wider range.Solid l<strong>in</strong>es (without symbols) are averaged to remove <strong>in</strong>terferencefr<strong>in</strong>ges. (lower) Ratios of photoconductances with and without theAg film; the solid l<strong>in</strong>e is the ratio of the fr<strong>in</strong>ge-averagedphotoconductances.are "processed" to remove the fr<strong>in</strong>ges; the smooth l<strong>in</strong>e <strong>in</strong> thelower panel <strong>in</strong>dicates the ratio of these "fr<strong>in</strong>ge-removed"curves. The enhancement now reaches a reduced value ofabout 5 [3].We speculate that the ratios of unprocessed photocurrentspectra reported <strong>in</strong> previous SOI work [1,2], which alsoexhibit the very strong oscillations seen <strong>in</strong> the lower panel ofFig. 1 and even larger ratios, are due to similar effects.In Figure 2, we also plot phase shifts for Ag-np filmsdeposited on the top ITO layer of nc-Si:H solar cells. Thefilms were prepared by thermal anneal<strong>in</strong>g and by nanospherelithography [4]. The associated phase shift is negative,correspond<strong>in</strong>g to a blue shift of the <strong>in</strong>terference fr<strong>in</strong>ges.Phase-shift (radians)-1-2700 800 900 1000Wavelength (nm)Figure 2. Optical phase shifts by silver nanoparticle films as <strong>in</strong>ferredfrom <strong>in</strong>terference fr<strong>in</strong>ge shifts <strong>in</strong> photocurrent spectra. Results areshown for films on LiF-capped SOI and on nc-Si:H solar cells with atop ITO layer. The silver nanoparticle films were created byanneal<strong>in</strong>g (“ann”) and by nanosphere lithography (“nsl”) ofevaporated silver. Note the differ<strong>in</strong>g signs of the phase shift.The difference <strong>in</strong> signs for the Ag-np films on Si and onITO is strik<strong>in</strong>g. This result is expected from the smallersurface plasmon resonance frequency when a Ag-np isproximate to silicon (<strong>in</strong>dex of refraction n ~ 3.5) than whenit is proximate to ITO (n ~ 1.9) [5].This research has been partially supported by the U. S.Department of Energy through the Solar America Initiative(DE-FC36-07 GO 17053). Additional support was receivedfrom the Empire State Development Corporation through theSyracuse Center of Excellence <strong>in</strong> Environmental and EnergySystems.*mumtazmurat@yahoo.com3210SOI (ann)nc-Si (ann)nc-Si (nsl)[1] Stuart H.R. and Hall D.G., Appl. Phys. Lett 69, 2327 (1996)[2] Pillai S. et.al., J. of Appl. Phys., 101 093105 (2007)[3] Ozturk B., Zhao H., Schiff E.A., Guha s., Yan B., Yang J,To be submitted for publication.[4] Ozturk B., et.al., Mater. Res. Soc. Symp. Proc. Vol. 1153,1153-A07-14 (2009).[5] Ozturk B., Zhao H., Schiff E.A., Damkaci F., Guha s., YanB., Yang J, Submitted to Mater. Res. Soc. Symp. Proc. (2010)6th Nanoscience and Nanotechnology Conference, zmir, 2010 758
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