Poster Session, Thursday, June 17Theme F686 - N1123Comparative Study of Humidity Sens<strong>in</strong>g Properties of PVC-Bt6-Cu and PVC-Bt6-Hg ComplexFilmsMavişe ŞEKER 1 , Salih OKUR 1 , Nesli T. YAĞMURCUKARDEŞ 1 , Gülşah KURT 2 , Bedrett<strong>in</strong> MERCİMEK 3 , Mahmut KUŞ 41Izmir Institute of Technology, Department of Physics Urla/Izmir/TURKEY2Aksaray University, Department of Chemistry, Aksaray/TURKEY3 Selçuk University, Department of Chemistry Education, Selçuklu/Konya/TURKEY4Selçuk University, Department of Chemical Eng<strong>in</strong>eer<strong>in</strong>g, Selçuklu/Konya/TURKEYAbstract: This study focuses on respectively the characterization of PVC-BT6-Cu complex and PVC-BT6-Hg complex films coated on aquartz surface by drop-cast<strong>in</strong>g method for humidity detection and comparison of these two th<strong>in</strong> films properties. The Resistance and quartzcrystal microbalance (QCM) were employed for the characterization. The change of resistance and resonance frequency was monitored withdifferent <strong>in</strong>creas<strong>in</strong>g and decreas<strong>in</strong>g relative humidity (RH) values between 11% and 97%.The humidity adsorption and desorption k<strong>in</strong>eticsof the PVC-Bt6-Cu complex and PVC-Bt6-Hg complex films was exam<strong>in</strong>ed by QCM technique.Poly(v<strong>in</strong>yl chloride) (PVC) was modified withbenzoilizotiyosiyanat and am<strong>in</strong>e derivative and PVCconnected benzoylthiourea ligand (PVC-Bt6) wasobta<strong>in</strong>ed.Then Cu and Hg complexes of this ligand weresynthesized.[1] In Fig.1 molecular structure of (a) PVC-Bt6-Cu complex and (b) PVC-Bt6-Hg complex are shown.CH 2 -CHCH 2 -CHCH 2 -CHCH 2 -CH2020%11%11 RH%11%11 RH00%22%22-20%43%43-20-40 %53%53-60%75Cu-PVCCu-PVC-40%75(under %84 RH)%84%84-80%94-60%94-100Hg-PVC (a) -80Hg-PVC (b)%97(under %84 RH)-120200 400 600 800 1000 1200Time/sec0 1000 2000 3000 4000 5000 6000Time/sec0dF/Hz1000dF/HzNNNNy = 4.1948 * e^(0.032107x) R= 0.98952100HNNSOCuSONHNHNNSOHgSONHN- f(Hz)Hgdownward10CuHgupwardCu(c)120 30 40 50 60 70 80 90 100Relative Humidity (%)(a)Figure 1. (a) Chemical structure of synthesized (a)PVC-Bt6- Cucomplex (b)PVC-Bt6- Hg complexQCM is a sensor that extremely sensitive to mass changes<strong>in</strong> the nanogram scale by measur<strong>in</strong>g the change ofpositions of its resonance frequency and it responds to agiven <strong>in</strong>crease of mass simultaneously, regardless of thespecies deposited.[2-3] We used <strong>in</strong> our study QCM withthe model of CHI400A Series from CH Instruments(Aust<strong>in</strong>, USA) to monitor the change <strong>in</strong> the resonancefrequency of quartz <strong>crystals</strong> between gold electrodesow<strong>in</strong>g to the fact that saturated aquatic solutions which itwas subjected. Relative humidity (RH) values of solutionswere 11%, 22%, 43%, 53%, 75%, 84%, 94% and 97%.1mg/1ml Cu complex and Hg complex were dissolved <strong>in</strong>tetrahidrofuran (THF) solvent and 5μl of solutions werecoated onto QCM thermally evaporated gold electrodeswhich has 17μm separation and 120 nm thickness by dropcast<strong>in</strong>gmethod. QCM frequency shifts and Resistanceversus Time values were observed depend<strong>in</strong>g on relativehumidity with Keitley 2420 Sourcemeter and commercialhumidity-temperature sensor.(b)Figure 2. (a) Comparison of QCM frequency shifts of PVC-Bt6-Cu complex and PVC-Bt6-Hg complex for different <strong>in</strong>creas<strong>in</strong>gand decreas<strong>in</strong>g RH values.(b) QCM frequency shifts (Hz) as afunction of time (s) for relative humidity values 11% and %84.(c) The frequency response of PVC-Bt6-Cu and PVC-Bt6-Hgfilms covered QCM adsorption-desorption process at fixed po<strong>in</strong>trelative humidity conditions between 11% and 97% RH.In Fig.2(a) QCM frequency responses of PVC-Bt6-Cuand PVC-Bt6-Hg comlexes are occured step by stepdepend<strong>in</strong>g on the different relative humidity conditionsbetween 11% and %97. In Fig.2(b) We can see QCMfrequency shifts (Hz) as a function of time (s) for relativehumidity values of 11% and %84. The adsorption anddesorption data taken from Fig.2(a) shows an exponentialdependence on relative humidity RH as shown <strong>in</strong> Fig.2(c).Fig.2 shows the frequency response of PVC-Bt6-Hgcomplex based sensor is more sensitive than PVC-Bt6-Cucomplex based sensor for humidity changes at roomtemperature.*Correspond<strong>in</strong>g author: salihokur@iyte.edu.tr[1] R. Navarro, K. Bierbrauer, C. Mijangos, E. Goiti, H.Re<strong>in</strong>ecke, Polym. Degrad. Stab. 93, 585–591 (2008)[2] P. Payra, P.K. Dutta, Zeolites: a premier, <strong>in</strong>: S.M. Auerbach,K.A. Carrado, P.K. Dutta (Eds.), Handbook of Zeolite Scienceand Technology, Marcel Dekker Inc., New York, 2003.[3] S. Okur, M. Kus, F. Özel, V. Aybek, M. Yilmaz, Talanta,81;1-2; 2010; 248.6th Nanoscience and Nanotechnology Conference, zmir, 2010 693
Poster Session, Thursday, June 17Theme F686 - N1123Fabrication of Micro Channels with Angled Sidewall on Silicon by Nd:YAG Laser AblationAlperen Acemoglu, 1 Veysel Ozkapici 2,* ,Vural Kara 1 ,Omid Tayafeh 3 ,Husey<strong>in</strong> Kizil 4 and Levent Trabzon 1,*1 Department of Mechanical Eng<strong>in</strong>eer<strong>in</strong>g, Istanbul Technical University, Gumussuyu, Istanbul 34437, Turkey2 BNM Fabrika Biyo Nano Mikro Tek. San. Ve Tic. Ek<strong>in</strong>ciler Cad. 7/4 stanbul 34830, Turkey3 Department of Electronics and Communication Eng<strong>in</strong>eer<strong>in</strong>g, Istanbul Technical University, Maslak, Istanbul 34469, Turkey4 Department of Metallurgical and Materials Eng<strong>in</strong>eer<strong>in</strong>g, Istanbul Technical University, Maslak, Istanbul 34469, TurkeyAbstract— We present experimental results on microfabrication of micro channels with angled sidewall on silicon surface by Nd:YAG laser.The purpose is to create V-shaped deep micro channels on silicon surface for produc<strong>in</strong>g nano-sharp micro Si-knife. The results can be used tocharacterize the behavior of ablation process under different laser parameters to achieve optimal process<strong>in</strong>g conditions for Si-micromicromach<strong>in</strong>g<strong>in</strong> MEMS such as V-shaped channels, slots and s<strong>in</strong>gulation process of vias.Micro channels on silicon wafer play an important role <strong>in</strong>many MEMS and NEMS applications. There are severalmicrofabrication processes for creat<strong>in</strong>g proper micro channelson silicon surface. Conventional chemical and mechanicalprocesses like etch<strong>in</strong>g, engrav<strong>in</strong>g and saw<strong>in</strong>g have beensuccessfully applied on to fabrication of micro channels [1, 2].Although well developed and mature production process, theyare not suitable for all k<strong>in</strong>d of MEMS application. That’s whylaser are widely used to create this k<strong>in</strong>d of channels onmaterial, laser fabrication process is a non contact processtherefore preferred <strong>in</strong> our task.Lasers are a powerful tool for micromach<strong>in</strong><strong>in</strong>gapplications. A focused laser beam can easily be concentratedonto a small target of a few micron diameters. The lasermaterial-<strong>in</strong>teraction <strong>in</strong> this target area will be controlled bylaser parameters such as wavelength, pulse energy and pulseduration which determ<strong>in</strong>e peak power density [3]. Certa<strong>in</strong> setsof parameters can cause thermal effects for mark<strong>in</strong>g, cutt<strong>in</strong>g,and drill<strong>in</strong>g.In our work, we have specially chosen to work withNd:YAG DPSS laser which has 1064 nm wavelength and 60W maximum power. There were limited survey on that, mostof the laser on literature was <strong>in</strong> the UV range with eitherfemto- or pico-seconds system, which are very expensive. Ourma<strong>in</strong> focus was creat<strong>in</strong>g those micro channels by nanosecondlaser with a wavelength of 1064 nm.One of the important f<strong>in</strong>d<strong>in</strong>gs <strong>in</strong> the study is to have U-shaped channels with laser beam directed on the Si-waferperpendicular. This observation is def<strong>in</strong>ed as taper<strong>in</strong>g affectand it depends on the repletion of the laser ablation and depthof the channel produced <strong>in</strong> the ablation process [5]. Taper<strong>in</strong>gaffect is around 30°- 40° for 10 – 50 μm deep channels andthey are roughly V-shaped channel as shown <strong>in</strong> Fig. 2a.Taper<strong>in</strong>g affect was reduced to 10 °- 15° when channel depthis <strong>in</strong> between 51 and 150 μm.Ma<strong>in</strong> aim of this work is to create angled sidewallproduction on silicon wafer by laser. Then, we exam<strong>in</strong>ed laserbeam ablation on Si-wafer by different angles with laser beam.By means of adjustable wedge, the Si is oriented as 30°-45°-60° degree with respect to <strong>in</strong>com<strong>in</strong>g laser <strong>in</strong> order to seesidewall affect and channel-wall angles. The channel-wallangles should be 30°-45°-60° degrees after <strong>in</strong>cl<strong>in</strong>ed Si-waferablation by laser if there is no taper<strong>in</strong>g effect. We measuredchannel-wall angles by profilometer on each Si wafer ablatedby a different angle. We found that the channel-wall angles are38°-42°, 29°-34° and 19°-22° for ideally expected sidewallangel 60°, 45° and 30°, respectively. The difference betweenmeasured and expected angles is due to taper<strong>in</strong>g effect <strong>in</strong> Silaser ablation.(a)(b)Figure 1: (a) Schematic draw<strong>in</strong>gs of angled channels set up (b) Angledmicro channel fabrication setup.We first studied ablation effect of perpendicular laserbeam on silicon surface. We observe and measure the effect oflaser on scribed or grooved channels by profilometre bychang<strong>in</strong>g laser ablation velocity, frequency, power andrepetition. It is been showed that 40 – 100 μm wide and 5- 250μm deep groves can easily been produced by laser. There werebig debris or (HAZ) around the channel due to thermal affectof laser. As our expectation and previous literature <strong>in</strong>fo,ablation affect of laser <strong>in</strong>creased by power, frequency,repetition <strong>in</strong>crements and velocity decrements [3]. The degreeof ablation does not l<strong>in</strong>early depend on the aforementionedparameters; the relationship is very complex and wellexpla<strong>in</strong>ed [4].Figure 2: (a) Optical microscope picture of micro channels produced by laser(b) Profilometre result graph of sidewall angel of laser ablated micro channel.This work was partially supported by TUBITAK under Grant No. 8080090*Correspond<strong>in</strong>g authors: levent.trabzon@itu.edu.tr andveysel.ozkapici@bnmfabric.com[1] G.S. May,S.M.Sze, Fundamentals of semiconductor fabrication,JonhWilley & Sons, Inc.,(2004).[2] G. T. A. Kovacks, N. Maluf,G.W. Crabtree,Bulk Micromach<strong>in</strong><strong>in</strong>g ofSilicon K. Petersen, IEEE, VOL. 86, NO. 8, (1998)Phys. Today 57, No. 12, 39 (2004).[3]A. Ostendorf, K. Koerber, T. Nether, T. Temme: “Material Process<strong>in</strong>gApplications for Diode Pumped Solid State Lasers” In: Lambda Highlights,No. 57 , Gött<strong>in</strong>gen (2000)[4] Holmes A.S., Pedder J.E.A., Boehlen K., Advanced laser micromach<strong>in</strong><strong>in</strong>gprocesses for MEMS applications, SPIE Proceed<strong>in</strong>gs Vol. 6261,(2006)[5] T. Otani,L. Herbst, M.Hegl<strong>in</strong>g.S.V.Govorkov, A.O. WiessnerMicrodrill<strong>in</strong>g and micromach<strong>in</strong><strong>in</strong>g with diode-pumped solid-state lasersBogdanovic et al., Appl. Phys. A 79, 1335–1339 (2004) (2003).6th Nanoscience and Nanotechnology Conference, zmir, 2010 694
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