Poster Session, Thursday, June 17Theme F686 - N1123Humidity Sens<strong>in</strong>g Properties of Titanium Dioxide (TiO 2 ) Th<strong>in</strong> FilmsMehmet KABADAYI 1 , Salih OKUR 1 ,Nesli T. YAĞMURCUKARDEŞ 11 Izmir Institute of Technology, Faculty of Science, Department of Physics, Gulbahce Koyu Kampusu, 35430,Urla, Izmir, TurkeyAbstract- Humidity sens<strong>in</strong>g properties of TiO 2 nanoparticle th<strong>in</strong> film that prepared by drop cast<strong>in</strong>g method were <strong>in</strong>vestigatedby quartz crystal microbalance (QCM) and electrical characterization. The results of our experiment show that TiO 2nanoparticles have a great potential for humidity sens<strong>in</strong>g applications at room temperature.Pure titanium dioxide does not occur <strong>in</strong> nature but isderived from ilmenite of leuxocene ores. The TiO 2nanoparticles generally present <strong>in</strong> three crystal phases:anatase, rutile, and brookite. Due to its highphotocatalytic activity, anatase is used as a photocatalystto treat various waste waters [2].In our study we used commercially available millenniumPC 500 TiO 2 which has 5-10nm particle size, 99%anatase form and 250 m 2 /gr BET surface area. 1gr TiO 2dispersed <strong>in</strong> 20ml distilled water and kept <strong>in</strong>to ultrasoniccleaner for 30 m<strong>in</strong>ute at 50 0 C. After wait<strong>in</strong>g 10 m<strong>in</strong>utesthe semi-transparant part of the dispersion was taken.And 5μl of the dispersion is coated over a glass substrateby drop-cast<strong>in</strong>g method. The thickness of the film wasmeasured as 450 nm with Dektak 150 profilometer ofVeeco. SEM image of drop casted millenium PC 500TiO 2 th<strong>in</strong> film is shown <strong>in</strong> Figure1.(1)where is resonant frequency (8MHz), A is thearea of the gold disk coated onto the crystal, ρ isthe density of the crystal (2.684g/cm 3 ), and μ is theshear modulus of quartz (2.947x10 11 g/cms 2 ).F/Hz20-2-4-611%22%43%53%84%75%94%84%94%97%-80 1000 2000 3000 4000 5000 6000210(a)Time/sec43%53%75%22%11%y = 0,698 - 0,067407x R= 0,9972y = 2,2276 - 0,077601x R= 0,99245(b)-1f/Hz-2-3-4-5upwarddownward-60 20 40 60 80 100Relative Humidity (%)Figure 2(aand b):Frequency change with different RH(%) valuesFigure 1. SEM image of drop casted millenium PC 500 TiO2 th<strong>in</strong> film.For the electrical characterizations, Au metal withhigh purity (99.9%) was thermally evaporated onthe TiO 2 film with a separation of 17 μl. Keithly2420 Sourcemeter was used to <strong>in</strong>vestigateelectronic parameters. To estimate the frequencychange due to mass load<strong>in</strong>g of water molecules,QCM with the model of CHI400A Series from CHInstruments was used. Electrical characterizationand frequency changes were obta<strong>in</strong>ed with theexposure of the film at different relative humidity(RH) ratios. (11%, 22%, 43%, 55%, 75%, 84%,94%, and 97% RH.)To convert the measured frequency change to themass change, Sauerbrey Equation is used [3].Figure 2 (a and b) shows the frequency changes dueto different relative humidity values .The frequencyof the TiO 2 film is decreas<strong>in</strong>g and <strong>in</strong>creas<strong>in</strong>ghumidity values from 11% to 97%.A positive frequency observed dur<strong>in</strong>g the resonanceoscillations because of the behaviours of TiO 2films.Our experimental results give that TiO2nanoparticle sensor is sensitive to relative humiditychanges at room temperature[1] S. Okur, M. Kus, F. Özel, V. Aybek, M. Yilmaz, Talanta,81;1-2; 2010; 248.[2] Tetsuro, K., Toshiaki, O., Mitsunobu, I., et al.,Photocatalytic Activity of Rutile–Anatase Coupled TiO2Particles Prepared by a Dissolution–ReprecipitationMethod, J.Colloid. Interf. Sci., 2003, vol. 267, no. 2, pp.377–381.[3] G. Sauerbrey, Z. Phys. 155 (1959) 206.6th Nanoscience and Nanotechnology Conference, zmir, 2010 701
PPPPPPoster Session, Thursday, June 17Theme F686 - N1123Electrical and Optical Properties of Al Doped ZnO Film and Potential Applications of Gas Sensors1,21,21,21,2UO. SancakogluUPP*, M. ErolPP, M. BektasPP, F. EbeoglugilPP, H. SozbilenP3P, O. Mermer 2,3P, E. Celik 1,21PDokuz Eylul University, Department of Metallurgical and Materials Eng<strong>in</strong>eer<strong>in</strong>g, T<strong>in</strong>aztepe Campus, 35160 Buca, Izmir-Turkey.2PDokuz Eylul University, Center for Fabrication and Application of Electronic Materials (EMUM), T<strong>in</strong>aztepe Campus, 35160Buca, Izmir-Turkey3PEge University, Deparment of Electrical and Electronics Eng<strong>in</strong>eer<strong>in</strong>g, 35100, Bornova, Izmir-Turkey.Abstract-Undoped and Al doped semiconductor ZnO films on Si(100) and glass substrates were prepared by sol-gel technique. For thispropose, transparent solutions were prepared with Zn and Al based precursors. The solutions were deposited on glass substrates us<strong>in</strong>g sp<strong>in</strong>coat<strong>in</strong>g technique which decreases the film thickness up to nanoscale and gives the coat<strong>in</strong>g a smooth characteristic. Deposited films were driedooat 300P PC for 10 m<strong>in</strong> <strong>in</strong> order to remove hydrous and volatile content, subsequently films were heat treated at 500P PC for 5 m<strong>in</strong>. to removeoorganic contents and then to obta<strong>in</strong> ZnO phase structure the films were annealed at 600P PC for 1 hour <strong>in</strong> air atmosphere. F<strong>in</strong>ally the surfacemorphologies and roughness values of the films were determ<strong>in</strong>ed via AFM (atomic force microscopy) and profilometer, respectively. Thestructural and optical properties of these films have been <strong>in</strong>vestigated by XRD (x-ray diffractometer) and optical properties such astransmittance spectrum, optical band gap, and optical constants (refractive <strong>in</strong>dex, ext<strong>in</strong>ction coefficient, real and imag<strong>in</strong>ary parts of the dielectricconstant) of the films were determ<strong>in</strong>ed.Z<strong>in</strong>c oxide (ZnO) has attracted extensive <strong>in</strong>terest becauseof its important role <strong>in</strong> various applications, for example, gassensor [1], varistors [2], surface acoustic wave devices [3],optical waveguides [4] as well as blue/UV light emitt<strong>in</strong>gdevices [5]. In addition, ZnO has been considered as anexcellent candidate to replace <strong>in</strong>dium t<strong>in</strong> oxide (ITO) and t<strong>in</strong>oxide (SnO2) as transparent conductive electrodes <strong>in</strong> flat paneldisplay and solar cell devices [6,7]. The advantages of z<strong>in</strong>coxide <strong>in</strong>clude <strong>in</strong>expensiveness and relative ease oflithography. However, the electrical conductivity of un-dopedz<strong>in</strong>c oxide is not high enough for practical application. Furtherreduction of resistivity of z<strong>in</strong>c oxide can be achieved either bydop<strong>in</strong>g group III elements such as B, Al, In and Ga to replacez<strong>in</strong>c atoms [8] or group IV elements, F, to substitute oxygenatoms [9].The structural and morphological properties ofsemiconductor oxides have a substantial effect on their optical,electrical and gas sens<strong>in</strong>g properties. The controlledparticlesize and morphology facilitate the desired characteristics <strong>in</strong>the materials. Several simplewet chemical routes like sol–gel,co-precipitation and Pech<strong>in</strong>i route have been adapted to formnanostructures [10].specific acid-alcohol medium to remove the contam<strong>in</strong>ationsand prepare the surface for sol-gel coat<strong>in</strong>g. The films weredeposited by the technique detailed <strong>in</strong> Figure 1.Figure 2 shows the x-ray diffraction spectra of the pureZnO film. It also represents the success of the coat<strong>in</strong>g process.Figure 2. X-ray diffraction spectra of the pure ZnO film.The structural and optical properties of the films will beshown <strong>in</strong> details. b)The authors are <strong>in</strong>debted to State Plann<strong>in</strong>g Foundation(DPT) and Dokuz Eylul University for f<strong>in</strong>ancial support.*Correspond<strong>in</strong>g author: orkut.sancakoglu@deu.edu.trFigure 1. Flow chart of sol-gel process<strong>in</strong>g for ZnO th<strong>in</strong> films.In the present study; pure, and Al substituted ZnOR Rth<strong>in</strong> filmswere deposited on glass substrates by sol-gel method and sp<strong>in</strong>coat<strong>in</strong>g technique. Si(100) and glass substrates weremechanically cleaned by us<strong>in</strong>g a new designed apparatus <strong>in</strong> a[1] K.S. Weibenrieder, J. Muller, Th<strong>in</strong> Solid Films 30 (1997) 30.[2] E. Olsson, L.K.L. Falk, G.L. Dunlop, R. Osterlund, J. Mater. Sci.20 (1985) 4091.[3] C.R. Gorla, N.W. Emanetoglu, S. Liang, W.E. Mayo, Y. Lu, M.Wraback, H. Shen, J. Appl. Phys. 85 (1999) 2595.[4] M.H. Koch, P.Y. Timbrell, R.N. Lamb, Semicond. Sci. Technol.10 (1995) 1523.[5] D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Easton,G. Cantwell, Appl. Phys. Lett. 81 (2002) 1830.[6] G. Hass, J. Heaney, A.R. Toft, Appl. Opt. 18 (1975) 1488.[7] R. Barber, G. Pryor, E. Re<strong>in</strong>heimer, SID Digest Tech. 28 (1997)18.[8] G. Sberveglieri, B. Benussi, G. Coccoli, S. Groppelli, P. Nelli,Th<strong>in</strong> Solid Films 186 (1990) 349.[9] C. Grivas, S. Mailis, L. Boutsikaris, D.S. Gill, N.A. Va<strong>in</strong>os, P.J.Chandler, Laser Phys. 8 (1998) 326.[10] C. S. Navale, V. Ravi, I.S. Mulla, Sensors and Actuators B 139(2009) 466–4706th Nanoscience and Nanotechnology Conference, zmir, 2010 702
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