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Photonic crystals in biology - NanoTR-VI

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PP mPP vs.P =P,PP (1)P andPoster Session, Thursday, June 17Theme F686 - N1123Influence of Anneal<strong>in</strong>g Conditions on Optical Properties of ZnO Th<strong>in</strong> Films111111UDerya BaharUP P*, Göknil BabürP P, S<strong>in</strong>an DikenP P, Tuba Aye TermeliP P, Banu ErdoanP P, Sava SönmezoluPPand Güven ÇankayaP1PDepartment of Physics, Faculty of Arts and Science, Gaziosmanpaa University, Tokat 60250, TurkeyAbstract-ZnO th<strong>in</strong> films were deposited on soda lime glass substrates by sol–gel sp<strong>in</strong>-coat<strong>in</strong>g technique. The optical properties of ZnO th<strong>in</strong> filmsare <strong>in</strong>vestigated for different anneal<strong>in</strong>g temperatures. The optical band gaps of th<strong>in</strong> film are found to vary with anneal<strong>in</strong>g temperatures. Theobta<strong>in</strong>ed films are also transparent <strong>in</strong> the UV- visible region1Z<strong>in</strong>c oxide (ZnO) as a wide-band-gap semiconductor hasattracted much attention <strong>in</strong> current semiconductor research,due to its superior optical properties. In addition, ZnO is aversatile semiconductor material, which has attracted attentionfor its wide range of applications, such as th<strong>in</strong> films, solarcells, lum<strong>in</strong>escent, electrical and acoustic devices andchemical sensors [1-2].In this paper, we report the <strong>in</strong>vestigation of ZnO th<strong>in</strong> filmsprepared by sol-gel sp<strong>in</strong> coat<strong>in</strong>g process us<strong>in</strong>g z<strong>in</strong>c acetate(ZnAc). The optical characterization is <strong>in</strong>vestigated fordifferent anneal<strong>in</strong>g temperatures us<strong>in</strong>g Perk<strong>in</strong> Elmer Lambda35 UV-<strong>VI</strong>S Spectrometer at room temperature.Transmittance (%)100806040200200 400 600 800 1000 1200Wavelenght (nm)200 C 0300 C 0400 C 0500 C 0Figure 1. UV–<strong>VI</strong>S spectra of the ZnO th<strong>in</strong> film for varioustemperatures.In order to prepare a ZnO solution, first, 3.35gr z<strong>in</strong>c acetate(Zn(CHR3RCOO)R2R·2HR2RO, Merck), used as a precursor, wasdissolved <strong>in</strong> 50 ml ethanol [CR2RHR6RO, Merck] and stirred for 50m<strong>in</strong> at 60 P PC <strong>in</strong> a magnetic mixture. Then, 5 ml glacial aceticacide [CR2RHR4ROR2R, Merck] and 1.5 ml hydrochloride acid (HCl,Merck) were added <strong>in</strong> the solution, and the f<strong>in</strong>al solution wassubjected to the magnetic mixture for 2 h. Here, glacial aceticacid and hydrochloride acid were used as an <strong>in</strong>hibitor to slowdown the z<strong>in</strong>c acetate fast hydrolysis. Prior to the coat<strong>in</strong>gprocess, the glass was washed with water, ultrasonicallycleaned <strong>in</strong> ethanol for 20 m<strong>in</strong>, and <strong>in</strong> acetone for 20 m<strong>in</strong>,respectively. The deposition was carried out at a sp<strong>in</strong>n<strong>in</strong>gspeed of 3000 rpm for 30 s. The sp<strong>in</strong> coat<strong>in</strong>g procedure was0 0 0cont<strong>in</strong>uously repeated five times at 200P PC, 300P PC, 400P PC and0500P PC anneal<strong>in</strong>g temperatures on glass substrate.Fig. 1 shows the UV–<strong>VI</strong>S spectra ZnO th<strong>in</strong> films fordifferent anneal<strong>in</strong>g temperatures <strong>in</strong> wavelength range 300–1100nm. The transmission of the th<strong>in</strong> films of z<strong>in</strong>c oxidedecreases with the <strong>in</strong>crease <strong>in</strong> anneal<strong>in</strong>g temperature. This canbe l<strong>in</strong>ked with the <strong>in</strong>crease <strong>in</strong> the gra<strong>in</strong> size, and <strong>in</strong>dicat<strong>in</strong>g itshigh surface roughness and <strong>in</strong>homogeneity [3].(h v) 2 (eV/m) 220161284200 C 0 , E g= 3.84 eV300 C 0 , E g= 3.74 eV400 C 0 , E g= 3.67 eV500 C 0 , E g = 3.58 eV02.4 2.8 3.2 3.6 4Photon energy (eV)Figure 2. UV–<strong>VI</strong>S spectra of the ZnO th<strong>in</strong> film for varioustemperatures.The optical band gap of the film was calculated by thefollow<strong>in</strong>g relation [4]:(hv) = A (hv - ERgR) P7where A is an energy-<strong>in</strong>dependent constant between 10P8 -110PP, Eg is the optical band gap and r is a constant, whichdeterm<strong>in</strong>es type of optical transition, r = 1/2, 2, 3/2 or 3 forallowed direct, allowed <strong>in</strong>direct, forbidden direct andforbidden <strong>in</strong>direct electronic transitions, respectively [4]. The1/rr(hv)P hv curves were plotted for different r values andthe best fit was obta<strong>in</strong>ed for r = ½. The film at variousanneal<strong>in</strong>g temperatures shows a direct allowed transition. Theoptical band gap was determ<strong>in</strong>ed by extrapolat<strong>in</strong>g the l<strong>in</strong>ear2portion of the plots to (hv)P 0. The optical band gaps of theth<strong>in</strong> film were found to be 3.84, 3.74, 3.67 and 3.58 eV at 200 °C,300 °C, 400 °C and 500 °C anneal<strong>in</strong>g temperature, respectively.The thicknesses of ZnO film were also determ<strong>in</strong>ed fromtransmittance measurements <strong>in</strong> Fig.1 and found to be 1361, 692,939 and 660 nm, respectively. The optical band gap decreaseswith the <strong>in</strong>creas<strong>in</strong>g anneal<strong>in</strong>g temperatures. The decrease <strong>in</strong>the optical band gap is attributed to the lower<strong>in</strong>g of the<strong>in</strong>teratomic spac<strong>in</strong>g, which may be associated with a decrease<strong>in</strong> the amplitude of atomic oscillations around theirequilibrium positions [5].In summary, the analysis of the transmission spectra showsthat ZnO th<strong>in</strong> films are transparent <strong>in</strong> the UV-visible regionirrespective of the anneal<strong>in</strong>g temperatures. This work waspartially supported by the Scientific Research Commission ofGaziosmanpaa University (Project No: 2009/29).*Correspond<strong>in</strong>g author: HTbhr_dry@hotmail.comT[1] Y. Chen, D.M. Bagnall, Z. Zhu, T. Sekiuchi, K. Park, K. Hiraga,T. Tao, S. Koyama, M.Y. Shen, T. Goto, J. Cryst. Growth 181 (1997)165.[2] S. Saito, M. Miyayama, K. Koumoto, H. Yanagida, J. Am. Ceram.Soc. 68 (1985) 40–43[3] K. Liu, X. Wu, B. Wang, Q. Liu, Mater. Res. Bull. 37 (2002)2255.[4] J. Tauc, Mater. Res. Bull. 5 (1970) 721.[5] S. Sönmezolu, G. Çankaya,P PN. Ser<strong>in</strong>, T. Ser<strong>in</strong>, Int. Conf. onNanomaterials and Nanosystems, 10-13 August 2009, p. 129.6th Nanoscience and Nanotechnology Conference, zmir, 2010 619

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