section 1 - World Intellectual Property Organization
section 1 - World Intellectual Property Organization
section 1 - World Intellectual Property Organization
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42/1998<br />
14818 PCT Gazette - Section I - Gazette du PCT 22 Oct/oct 1998<br />
(72) TSIEN, Roger, Y.; 8535 Nottingham Place, La<br />
Jolla, CA 92037 (US). HEIM, Roger; 968 Sandcastle<br />
Drive, Cardiff by the Sea, CA 92007 (US).<br />
CUBITT, Andrew, B.; 11083 Caminito Encanto,<br />
San Diego, CA 92131 (US). DICKSON, Robert,<br />
M.; Apartment 135, 7265 Charmant Drive, San<br />
Diego, CA 92122 (US). MOERNER, William,<br />
E.; 8720 Cliffridge Avenue, La Jolla, CA 92037<br />
(US).<br />
(74) BERLINER, Robert; Fulbright & Jaworski,<br />
L.L.P., 29th floor, 865 S. Figueroa Street, Los<br />
Angeles, CA 90017–2571 (US).<br />
(81) AL AM AT AU AZ BA BB BG BR BY CA CH<br />
CN CU CZ DE DK EE ES FI GB GE GH GM GW<br />
HU ID IL IS JP KE KG KP KR KZ LC LK LR<br />
LS LT LU LV MD MG MK MN MW MX NO NZ<br />
PL PT RO RU SD SE SG SI SK SL TJ TM TR<br />
TT UA UG UZ VN YU ZW; AP (GH GM KE LS<br />
MW SD SZ UG ZW); EA (AM AZ BY KG KZ<br />
MD RU TJ TM); EP (AT BE CH DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE); OA (BF BJ<br />
CF CG CI CM GA GN ML MR NE SN TD TG).<br />
(11) WO 98/47149<br />
(21) PCT/US98/06846<br />
(13) A1<br />
(22) 6 Apr/avr 1998 (06.04.1998)<br />
(25) en (26) en<br />
(31) 08/837,001 (32) 11 Apr/avr 1997<br />
(11.04.1997)<br />
(33) US<br />
(43) 22 Oct/oct 1998 (22.10.1998)<br />
(51) 6 G11C 13/00<br />
(54) • POWER SUPPLY DETECTION SCHEME FOR<br />
FLASH MEMORY<br />
• SYSTEME DE DETECTION DE TENSION<br />
D’ALIMENTATION POUR MEMOIRE FLASH<br />
(71) INTEL CORPORATION [US/US]; 2200 Mission<br />
College Boulevard, Santa Clara, CA 95052 (US).<br />
(72) LANDGRAF, Marcus, E.; 139 Rambling Drive,<br />
Folsom, CA 95630 (US). LARSEN, Robert,<br />
E.; 5267 Deerwood Drive, Shingle Springs, CA<br />
95682 (US). TAUB, Mase, J.; 9429 Plain Oak<br />
Way, Elk Grove, CA 95758 (US). TALREJA,<br />
Sanjay; 105 Boxcar Way, Folsom, CA 95630<br />
(US). DALVI, Vishram, P.; 1208 Halidon Way,<br />
Folsom, CA 95630 (US). BABB, Edward, M.;<br />
1841 Starbuck Road, Rescue, CA 95672 (US).<br />
PATHAK, Bharat, M.; 101 Vonnie Court, Folsom,<br />
CA 95630 (US). HAID, Christopher, J.; 1200<br />
Creekside Drive #812, Folsom, CA 95630 (US).<br />
(74) TAYLOR, Edwin, H. et al. / etc.; Blakely,<br />
Sokoloff, Taylor & Zafman LLP, 7th floor, 12400<br />
Wilshire Boulevard, Los Angeles, CA 90025 (US).<br />
(81) AL AM AT AT (Utility model / modèle d’utilité)<br />
AU (Petty patent) AZ BA BB BG BR BY CA CH<br />
CN CU CZ CZ (Utility model / modèle d’utilité)<br />
DE DE (Utility model / modèle d’utilité) DK DK<br />
(Utility model / modèle d’utilité) EE EE (Utility<br />
model / modèle d’utilité) ES FI FI (Utility model /<br />
modèle d’utilité) GB GE GH GM GW HU ID IL<br />
IS JP KE KG KP KR KZ LC LK LR LS LT LU<br />
LV MD MG MK MN MW MX NO NZ PL PT RO<br />
RU SD SE SG SI SK SK (Utility model / modèle<br />
d’utilité) SL TJ TM TR TT UA UG UZ VN YU<br />
ZW; AP (GH GM KE LS MW SD SZ UG ZW);<br />
EA (AM AZ BY KG KZ MD RU TJ TM); EP (AT<br />
BE CH CY DE DK ES FI FR GB GR IE IT LU<br />
MC NL PT SE); OA (BF BJ CF CG CI CM GA<br />
GN ML MR NE SN TD TG).<br />
(11) WO 98/47150 (13) A1<br />
(21) PCT/US98/06777<br />
(22) 6 Apr/avr 1998 (06.04.1998)<br />
(25) en (26) en<br />
(31) 08/840,303 (32) 11 Apr/avr 1997<br />
(11.04.1997)<br />
(33) US<br />
(43) 22 Oct/oct 1998 (22.10.1998)<br />
(51) 6 G11C 16/04, H01L 29/788<br />
(54) • NONVOLATILE MEMORY<br />
• MEMOIRE REMANENTE<br />
(71) PROGRAMMABLE SILICON SOLUTIONS<br />
[US/US]; 628A East Evelyn, Sunnyvale, CA 94086<br />
(US).<br />
(72) WONG, Ting–wah; 10996 Linda Vista Drive,<br />
Cupertino, CA 95014 (US).<br />
(74) TROP, Timothy, N.; Trop, Pruner, Hu & Miles,<br />
P.C., Suite 128, 8550 Katy Freeway, Houston, TX<br />
77024 (US).<br />
(81) CA CN KR; EP (AT BE CH CY DE DK ES FI FR<br />
GB GR IE IT LU MC NL PT SE).<br />
Published / Publiée : (c)<br />
(11) WO 98/47151 (13) A1<br />
(21) PCT/US98/07082<br />
(22) 7 Apr/avr 1998 (07.04.1998)<br />
(25) en (26) en<br />
(31) 08/838,856 (32) 11 Apr/avr 1997<br />
(11.04.1997)<br />
(33) US<br />
(43) 22 Oct/oct 1998 (22.10.1998)<br />
(51) 6 G11C 16/06, 16/04<br />
(54) • ELECTRICALLY ERASABLE NONVOLA-<br />
TILE MEMORY<br />
• MEMOIRE PERMANENTE EFFAÇABLE<br />
ELECTRIQUEMENT<br />
(71) PROGRAMMABLE SILICON SOLUTIONS<br />
[US/US]; 628A East Evelyn, Sunnyvale, CA 94086<br />
(US).<br />
(72) WONG, Ting–wah; 10996 Linda Vista Drive,<br />
Cupertino, CA 95014 (US).<br />
(74) TROP, Timothy, N.; Trop, Pruner, Hu & Miles,<br />
P.C., Suite 128, 8550 Katy Freeway, Houston, TX<br />
77024 (US).<br />
(81) CA CN KR; EP (AT BE CH DE DK ES FI FR GB<br />
GR IE IT LU MC NL PT SE).<br />
(11) WO 98/47152<br />
(21) PCT/JP98/01731<br />
(13) A1<br />
(22) 16 Apr/avr 1998 (16.04.1998)<br />
(25) ja (26) ja<br />
(31) 9/98840 (32) 16 Apr/avr 1997<br />
(16.04.1997)<br />
(33) JP<br />
(31) 9/326279 (32) 27 Nov/nov 1997<br />
(27.11.1997)<br />
(33) JP<br />
(43) 22 Oct/oct 1998 (22.10.1998)<br />
(51) 6 G11C 29/00, G01R 31/28<br />
(54) • SEMICONDUCTOR INTEGRATED CIRCUIT<br />
AND METHOD FOR TESTING MEMORY<br />
• CIRCUIT INTEGRE A SEMI–CONDUCTEUR<br />
ET PROCEDE POUR TESTER LA MEMOIRE<br />
(71) HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai<br />
4–chome, Chiyoda–ku, Tokyo 101–8010 (JP).<br />
(for all designated States except / pour tous les États<br />
désignés sauf US)<br />
(72, 75) SATOH, Masayuki [JP/JP]; Hitachi, Ltd.<br />
Semiconductor & Integrated Circuits Division,<br />
20–1, Josuihon–cho 5–chome, Kodaira–shi, Tokyo<br />
187–0022 (JP). SHIMIZU, Isao [JP/JP];<br />
Hitachi, Ltd. Semiconductor & Integrated Circuits<br />
Division, 20–1, Josuihon–cho 5–chome,<br />
Kodaira–shi, Tokyo 187–0022 (JP). FUKIAGE,<br />
Hiroshi [JP/JP]; Hitachi, Ltd. Semiconductor &<br />
Integrated Circuits Division, 20–1, Josuihon–cho<br />
5–chome, Kodaira–shi, Tokyo 187–0022 (JP).<br />
(74) OBINATA, Tomio; Yamamoto Building 2F, 4, Kagurazaka<br />
3–chome, Shinjuku–ku, Tokyo 162–0825<br />
(JP).<br />
(81) CN JP KR SG US; EP (AT BE CH CY DE DK ES<br />
FI FR GB GR IE IT LU MC NL PT SE).<br />
(11) WO 98/47153 (13) A1<br />
(21) PCT/GB98/01040<br />
(22) 8 Apr/avr 1998 (08.04.1998)<br />
(25) en (26) en<br />
(31) 9707690.5 (32) 16 Apr/avr 1997 (33) GB<br />
(16.04.1997)<br />
(43) 22 Oct/oct 1998 (22.10.1998)<br />
(51) 6 G21C 3/322<br />
(54) • COOLANT MIXING GRID FOR NUCLEAR<br />
FUEL ASSEMBLY<br />
• GRILLE DE MELANGE DE LIQUIDE DE<br />
REFROIDISSEMENT, DESTINEE A UN EN-<br />
SEMBLE COMBUSTIBLE NUCLEAIRE<br />
(71) BRITISH NUCLEAR FUELS PLC [GB/GB];<br />
Risley, Warrington, Cheshire WA3 6AS (GB).<br />
(for all designated States except / pour tous les États<br />
désignés sauf US)<br />
(72, 75) ABRAM, Timothy, James [GB/GB]; British<br />
Nuclear Fuels plc, Springfields Works, Salwick,<br />
Preston, Lancs. PR4 0XJ (GB). GILLESPIE,<br />
John, Woodside [GB/GB]; British Nuclear Fuels<br />
plc, Springfields Works, Salwick, Preston, Lancs.<br />
PR4 0XJ (GB).<br />
(74) GODDARD, David, John; Harrison Goddard<br />
Foote, 1 Stockport Road, Marple, Stockport SK6<br />
6BD (GB) et al. / etc.<br />
(81) AL AM AT AU AZ BA BB BG BR BY CA CH<br />
CN CU CZ DE DK EE ES FI GB GE GH GM GW<br />
HU ID IL IS JP KE KG KP KR KZ LC LK LR<br />
LS LT LU LV MD MG MK MN MW MX NO NZ<br />
PL PT RO RU SD SE SG SI SK SL TJ TM TR<br />
TT UA UG US UZ VN YU ZW; AP (GH GM KE<br />
LS MW SD SZ UG ZW); EA (AM AZ BY KG<br />
KZ MD RU TJ TM); EP (AT BE CH CY DE DK<br />
ES FI FR GB GR IE IT LU MC NL PT SE); OA<br />
(BF BJ CF CG CI CM GA GN ML MR NE SN<br />
TD TG).<br />
(11) WO 98/47154<br />
(21) PCT/US98/06520<br />
(13) A1<br />
(22) 2 Apr/avr 1998 (02.04.1998)<br />
(25) en (26) en<br />
(31) 08/834,038 (32) 11 Apr/avr 1997<br />
(11.04.1997)<br />
(33) US<br />
(43) 22 Oct/oct 1998 (22.10.1998)<br />
(51) 6 H01B 1/20, 1/22, B32B 1/00<br />
(54) • ELECTROCONDUCTIVE COMPOSITION,<br />
COMPOSITE SUITABLE FOR MAKING<br />
SAME, AND METHODS FOR PRODUCING<br />
SUCH COMPOSITION AND COMPOSITE<br />
• COMPOSITION ELECTROCONDUCTRICE,<br />
COMPOSITE CONVENANT POUR SA FA-<br />
BRICATION, ET LEURS PROCEDES DE<br />
FABRICATION<br />
(71) POTTERS INDUSTRIES INC. [US/US]; Corporate<br />
Technical Center, 600 Industrial Road, Carlstadt,<br />
NJ 07072 (US).