section 1 - World Intellectual Property Organization

42/1998
14822 PCT Gazette - Section I - Gazette du PCT 22 Oct/oct 1998
(22) 16 Apr/avr 1997 (16.04.1997)
(25) ja (26) ja
(43) 22 Oct/oct 1998 (22.10.1998)
(51) 6 H01L 21/56, 23/28, 25/08
(54) • MOLD, DEVICE, AND METHOD FOR MOL-
DING LAMINATED ELEMENT
• MOULE, DISPOSITIF ET PROCEDE POUR
MOULER UN ELEMENT STRATIFIE
(71) HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai
4–chome, Chiyoda–ku, Tokyo 101 (JP). SHINKO
SELLBIC CO., LTD. [JP/JP]; 41–4, Higashimagome
1–chome, Ota–ku, Tokyo 143 (JP).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) NISHIZAWA, Hirotaka [JP/JP]; 15–3–305,
Kitamachi 1–chome, Kokubunji–shi, Tokyo 185
(JP). ANJO, Ichiro [JP/JP]; 5–5, Nukui Minamicho
4–chome, Koganei–shi, Tokyo 184 (JP).
HAYASHIDA, Tetsuya [JP/JP]; 2196–5, Hirai,
Hinode–machi, Nishitamagun, Tokyo 190–01 (JP).
ABE, Yoshihisa [JP/JP]; 4267–36, Kuriyama,
Yokoshiba–machi, Sanbugun, Chiba 289–17 (JP).
KANEKO, Toshimitsu [JP/JP]; 32–27, Yachimata–Ha,
Yachimata–shi, Chiba 289–11 (JP).
(74) YOSHIDA, Yoshiharu; Shuwa No. 2 Toranomon
Building 6F, 21–19, Toranomon 1–chome, Minato–Ku,
Tokyo 105 (JP).
(81) CN JP KR SG US; EP (AT BE CH DE DK ES FI
FR GB GR IE IT LU MC NL PT SE).
(11) WO 98/47175 (13) A1
(21) PCT/JP98/01681
(22) 13 Apr/avr 1998 (13.04.1998)
(25) ja (26) ja
(31) 9/93623 (32) 11 Apr/avr 1997 (33) JP
(11.04.1997)
(43) 22 Oct/oct 1998 (22.10.1998)
(51) 6 H01L 21/60
(54) • PROCESS FOR MANUFACTURING SE-
MICONDUCTOR DEVICE AND SEMICON-
DUCTOR COMPONENT
• PROCEDE DE FABRICATION DE DISPOSI-
TIF ET COMPOSANT SEMICONDUCTEURS
(71) KABUSHIKI KAISHA TOSHIBA [JP/JP]; 72,
Horikawa–cho, Saiwai–ku, Kawasaki–shi, Kanagawa
210–0913 (JP).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) YAMAGUCHI, Masayoshi [JP/JP]; 301, Musashino–Mansion,
2–22, Nishi–machi 1–chome,
Kokubunji–shi, Tokyo 185–0035 (JP). HARADA,
Eiichi [JP/JP]; 29–19, Nishi–arai 1–chome, Adachi–ku,
Tokyo 123–0841 (JP).
(74) KIMURA, Takahisa; 6F, Sendai Building, 8–11,
Minato 1–chome, Chuo–ku, Tokyo 104–0043 (JP).
(81) AU CN SG US; EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE).
(11) WO 98/47176 (13) A1
(21) PCT/US98/07054
(22) 9 Apr/avr 1998 (09.04.1998)
(25) en (26) en
(31) 60/043,666 (32) 11 Apr/avr 1997
(11.04.1997)
(43) 22 Oct/oct 1998 (22.10.1998)
(51) 6 H01L 21/68, 21/00, C04B 35/10
(33) US
(54) • COMPOSITE CERAMIC DIELECTRICS
• DIELECTRIQUES EN CERAMIQUE COMPO-
SITE
(63) US 60/043,666 (CIP)
11 Apr/avr 1997 (11.04.1997)
(71) THE MORGAN CRUCIBLE COMPANY PLC
[GB/GB]; Morgan House, Madeira Walk, Windsor,
Berkshire SL4 1EP (GB).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) SMITH, Peter, C. [US/US]; 1656 Fordham
Way, Mountain View, CA 94010 (US). MERCER,
Randel, F. [US/US]; 724 Laurel Avenue #602,
San Mateo, CA 94401 (US). WOOD, Robert,
M. [US/US]; 3033 Canyon Road, Burlingame, CA
94010 (US).
(74) PRATT, John et al. / etc.; Kilpatrick Stockton
LLP, Suite 2800, 1100 Peachtree Street, Atlanta,
GA 30309–4530 (US).
(81) JP KR US; EP (AT BE CH CY DE DK ES FI FR
GB GR IE IT LU MC NL PT SE).
Published / Publiée : (c)
(11) WO 98/47177
(21) PCT/US98/06492
(13) A1
(22) 2 Apr/avr 1998 (02.04.1998)
(25) en (26) en
(31) 60/043,261 (32) 17 Apr/avr 1997
(17.04.1997)
(33) US
(31) 09/046,474 (32) 25 Mar/mar 1998
(25.03.1998)
(33) US
(43) 22 Oct/oct 1998 (22.10.1998)
(51) 6 H01L 21/768, 23/522, 23/532
(54) • NANOPOROUS DIELECTRIC FILMS WITH
GRADED DENSITY AND PROCESS FOR
MAKING SUCH FILMS
• PELLICULES DIELECTRIQUES NANOPO-
REUSES A DENSITE PROGRESSIVE, ET
LEUR PROCEDE DE FABRICATION
(71) ALLIEDSIGNAL INC. [US/US]; 101 Columbia
Road, P.O. Box 2245, Morristown, NJ 07962–2245
(US).
(72) WALLACE, Stephen; 8426 Yeager Drive, N.E.,
Alburquerque, NM 87109 (US). SMITH, Douglas,
M.; 1412 Marquette Place, N.E., Alberquerque,
NM 87106 (US). RAMOS, Teresa; 7517 El
Morro, N.E., Albuquerque, NM 87109 (US). RO-
DERICK, Kevin, H.; 3808 Lafayette, N.E., Albuquerque,
NM 87109 (US). DRAGE, James,
S.; 34906 Seal Rock Terrace, Fremont, CA 94555
(US).
(74) CRISS, Roger, H.; AlliedSignal Inc., Law Dept.
(E.Iannarone), 101 Columbia Road, P.O. Box 2245,
Morristown, NJ 07962–2245 (US).
(81) AL AU BA BB BG BR CA CN CU CZ EE GE
GH HU ID IL IS JP KP KR LK LR LS LT LV
MG MK MN MW MX NZ PL RO RU SD SG SI
SK SL TR TT UA UZ VN YU ZW; AP (GH GM
KE LS MW SD SZ UG ZW); EA (AM AZ BY
KG KZ MD RU TJ TM); EP (AT BE CH CY DE
DK ES FI FR GB GR IE IT LU MC NL PT SE);
OA (BF BJ CF CG CI CM GA GN ML MR NE
SN TD TG).
(11) WO 98/47178 (13) A2
(21) PCT/US98/06985
(22) 6 Apr/avr 1998 (06.04.1998)
(25) en (26) en
(31) 08/826,860 (32) 11 Apr/avr 1997
(11.04.1997)
(33) US
(43) 22 Oct/oct 1998 (22.10.1998)
(51) 6 H01L 21/768
(54) • METHOD AND APPARATUS FOR THIN
FILM ALUMINUM PLANARIZATION
• PROCEDE ET APPAREIL DE PLANARI-
SATION D’ALUMINIUM EN FEUILLES
MINCES
(71) NOVELLUS SYSTEMS, INC. [US/US]; 3970
North First Street, MS220, San Jose, CA 95134
(US).
(72) BIBERGER, Maximilian, A.; 737 Loma Verde
Avenue #6, Palo Alto, CA 94303 (US). CONCI,
Dennis, E.; 1750 Lake Street, San Mateo, CA
94402 (US). HOFFMAN, Vance, E., Jr.; 295
Loucks Avenue, Los Altos, CA 94022 (US).
(74) D’ALESSANDRO, Kenneth et al. / etc.;
D’Alessandro & Ritchie, P.O. Box 640640, San
Jose, CA 95164–0640 (US).
(81) DE GB JP KR.
(11) WO 98/47179 (13) A1
(21) PCT/JP98/00956
(22) 9 Mar/mar 1998 (09.03.1998)
(25) ja (26) ja
(31) 9/110409 (32) 11 Apr/avr 1997
(11.04.1997)
(31) 9/137682 (32) 12 May/mai 1997
(12.05.1997)
(31) 9/161872 (32) 3 Jun/juin 1997
(03.06.1997)
(31) 10/41241 (32) 6 Feb/fév 1998
(06.02.1998)
(33) JP
(33) JP
(33) JP
(33) JP
(43) 22 Oct/oct 1998 (22.10.1998)
(51) 6 H01L 23/12
(54) • PRINTED WIRING BOARD AND METHOD
FOR MANUFACTURING THE SAME
• CARTE IMPRIMEE ET SON PROCEDE DE
FABRICATION
(71) IBIDEN CO., LTD. [JP/JP]; 1, Kanda–cho
2–chome, Ogaki–shi, Gifu–ken 503–8604 (JP).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) TSUKADA, Kiyotaka [JP/JP]; Ibiden Co.,
Ltd., 200, Gama–cho 3–chome, Ogaki–shi,
Gifu–ken 503–8559 (JP). TAKADA, Masaru
[JP/JP]; Ibiden Co., Ltd., 200, Gama–cho
3–chome, Ogaki–shi, Gifu–ken 503–8559 (JP).
KONDO, Mitsuhiro [JP/JP]; Ibiden Co., Ltd.,
200, Gama–cho 3–chome, Ogaki–shi, Gifu–ken
503–8559 (JP). KOBAYASHI, Hiroyuki [JP/JP];
Ibiden Co., Ltd., 200, Gama–cho 3–chome,
Ogaki–shi, Gifu–ken 503–8559 (JP).
(81) KR US; EP (AT BE CH DE DK ES FI FR GB GR
IE IT LU MC NL PT SE).
(11) WO 98/47180 (13) A1
(21) PCT/JP97/01269
(22) 11 Apr/avr 1997 (11.04.1997)
(25) ja (26) ja
(43) 22 Oct/oct 1998 (22.10.1998)
(51) 6 H01L 27/118, 27/04, 21/822
(54) • SEMICONDUCTOR INTEGRATED CIRCUIT
• CIRCUIT INTEGRE A SEMICONDUCTEUR