BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

Extraction Procedure( m + 1) ( m) ( m)i i iP = P + ∆P(6.3.2)where i=1, 2, 3 for this example. The (m+1) parameter values for P 2 and P 3are obtained in an identical fashion. This process is repeated until theincremental parameter change in parameter values ∆P i (m) are smaller thana pre-determined value. At this point, the parameters P 1 , P 2 , and P 3 havebeen extracted.6.3.3 Extraction RoutineBefore any model parameters can be extracted, some process parametershave to be provided. They are listed below in Table 6-1:Input Parameters NamesT oxN chTL drawnW drawnX jPhysical MeaningGate oxide thicknessDoping concentration in the channelTemperature at which the data is takenMask level channel lengthMask level channel widthJunction depthTable 6-1. Prerequisite input parameters prior to extraction process.The parameters are extracted in the following procedure. These proceduresare based on a physical understanding of the model and based on local6-6 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley