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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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Capacitance <strong>Model</strong> Equ<strong>at</strong>ionswhere the bias dependences <strong>of</strong> V th given in Section B.1.1 are notconsidered in calcul<strong>at</strong>ing V fb for capMod = 2.( )Q =− Q + Q + Q + Qg inv acc sub0 δsubQ = Q + Q + Qb acc sub0 δsubQinv = Qs + Qd2{ 3 3 }V = vfb− 05 . V + V + 4δ vfb where V = vfb−V− δ ; δ = 002 .FBeff3 3 gb 3 3( )Q =−W L C V −vfbacc active active ox FBeffQsub0( V −V−V−V)2K ⎛⎜ 41oxgs FBeff= −WactiveLactiveCox⋅ − 1 + 1 +⎜22⎝K1oxgsteff , CVbseff⎞⎟⎟⎠Vds<strong>at</strong>,cvVgstefcvf= gsteff,cvAbulk'Abulk⎛' = Abulk+ ⎛ ⎝ ⎜ ⎞0 ⎜1 CLC CLE⎟⎝ Lactive⎠<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley B-22

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