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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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Single Current Expression for All Oper<strong>at</strong>ing Regimes <strong>of</strong> Vgs and Vds(3.6.2)VACLM=A E L + VPCLMAbulkEs<strong>at</strong>litlbulk s<strong>at</strong> eff gsteff( Vds−Vdseff)Similarly, Eq. (3.5.7) now becomesV⎛ −Plitl⎞exp⎜⎟⎝ Vds−Vdseff⎠1 scbe2 scbe1ASCBEP=Leff(3.6.3)<strong>The</strong> V dseff expression is written as2( δ ( δ)4δ)1V = V − V −V − + V −V − + V2dseff ds<strong>at</strong> ds<strong>at</strong> ds ds<strong>at</strong> ds ds<strong>at</strong>(3.6.4)<strong>The</strong> expression for V ds<strong>at</strong> is th<strong>at</strong> given under Section 3.4. <strong>The</strong> parameter δ in theunit <strong>of</strong> volts can be extracted. <strong>The</strong> dependence <strong>of</strong> V dseff on V ds is given in Figure 3-3. <strong>The</strong> V dseff function follows V ds in the linear region and tends to V ds<strong>at</strong> in thes<strong>at</strong>ur<strong>at</strong>ion region. Figure 3-4 shows the effect <strong>of</strong> δ on the transition region betweenlinear and s<strong>at</strong>ur<strong>at</strong>ion regimes.<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley 3-13

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