BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
Extraction Str<strong>at</strong>egiesdevice performance quite well. Values extracted in this manner will now havesome physical relevance.6.2 Extraction Str<strong>at</strong>egiesTwo different str<strong>at</strong>egies are available for extracting parameters: the single deviceextraction str<strong>at</strong>egy and group device extraction str<strong>at</strong>egy. In single deviceextraction str<strong>at</strong>egy, experimental d<strong>at</strong>a from a single device is used to extract acomplete set <strong>of</strong> model parameters. This str<strong>at</strong>egy will fit one device very well butwill not fit other devices with different geometries. Furthermore, single deviceextraction str<strong>at</strong>egy can not guarantee th<strong>at</strong> the extracted parameters are physical. Ifonly one set <strong>of</strong> channel length and width is used, parameters rel<strong>at</strong>ed to channellength and channel width dependencies can not be determined.BSIM3v3 uses group device extraction str<strong>at</strong>egy. This requires measured d<strong>at</strong>a fromdevices with different geometries. All devices are measured under the same biasconditions. <strong>The</strong> resulting fit might not be absolutely perfect for any single devicebut will be better for the group <strong>of</strong> devices under consider<strong>at</strong>ion.6.3 Extraction Procedure6.3.1 Parameter Extraction RequirementsOne large size device and two sets <strong>of</strong> smaller-sized devices are needed toextract parameters, as shown in Figure 6-1.6-2 <strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley
Change language