BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

Capacitance Model EquationsδQsub= WLCoxeff⎡⎢1− A⋅ ⎢⎢ 2⎢⎣bulk'Vcveff−⎛12 ⋅ ⎜V⎝( 1 − A ')gsteff , cvbulk−ϕ δ⋅ AbulkA−' Vbulk2cveff' Vcveff2⎤⎥⎥⎞⎥⎟⎥⎠ ⎦(i) 50/50 Charge PartitionQ = QSD1= Q2invWLC=−2oxeff⎡⎢⎢V⎢⎢⎣gsteffcv ,(ii) 40/60 Charge Partition1−ϕδ− A2bulk' Vcveff+⎛12⋅⎜V⎝Agsteffcv ,'2bulkV2cveffA−ϕ−δbulk' Vcveff⎤⎥⎥⎞⎥2⎟⎥⎠ ⎦QS=−⎛2⎜V⎝gsteffcv ,WLCoxeffA−ϕ−δbulk' Vcveff⎡2 ⎢⎞ ⎣2⎟⎠3 42 22 23⎤( V −ϕ) − ( V −ϕ) A ' V + ( V −ϕ)( A ' V ) − ( A ' V ) ⎥⎦gsteff , cvδ3gsteff , cvδbulkcveff3gsteff , cvδbulkcveff15bulkcveffQD=−⎛2⎜V⎝gsteff , cvWLCoxeffA−ϕ−δbulk' Vcveff⎡2 ⎢⎞ ⎣2⎟⎠(iii) 0/100 Charge Partition3 522 13⎤( V −ϕ) − ( V −ϕ) A ' V + ( V −ϕ)( A ' V ) − ( A ' V ) ⎥⎦gsteff , cvδ3gsteff , cvδbulkcveffgsteff , cvδbulkcveff5bulkcveffQSWLC=−2oxeff⎡⎢⋅ ⎢V⎢⎢⎣gsteff,cv1−ϕδ+ A2bulk' Vcveff−⎛12⋅⎜V⎝Agsteff,cv'2bulk−ϕδV2cveffA−bulk' Vcveff⎤⎥⎥⎞⎥2⎟⎥⎠⎦BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley B-27