BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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[9] J.D. Kendall and A.R. Boothroyd, "A Two-Dimensional Analytical Threshold VoltageModel for MOSFET's with Arbitrarily Doped Substrate," IEEE Electron DeviceLetter, vol. EDL-7, p.407, 1986.[10] Z.H. Liu, C. Hu, J.H. Huang, T.Y. Chan, M.C. Jeng, P.K. Ko, and Y.C. Cheng,"Threshold Voltage Model For Deep-Submicrometer MOSFETs," IEEE Tran.Electron Devices, vol. 40, pp. 86-95, Jan., 1993.[11] Y.C. Cheng and E.A. Sullivan, "Effect of Coulombic Scattering on Silicon SurfaceMobility," J. Appl. Phys. 45, 187 (1974).[12] Y.C. Cheng and E.A. Sullivan, Surf. Sci. 34, 717 (1973).[13] A.G. Sabnis and J.T. Clemens, "Characterization of Electron Velocity in the Inverted Si Surface," Tech. Dig.- Int. Electron Devices Meet., pp. 18-21 (1979).[14] G.S. Gildenblat, VLSI Electronics: Microstructure Science, p. 11, vol. 18, 1989.[15] M.S. Liang, J.Y. Choi, P.K. Ko, and C. Hu, "Inversion-Layer Capacitance andMobility of Very Thin Gate-Oxide MOSFET's," IEEE Trans. Electron Devices, ED-33, 409, 1986.[16] F. Fang and X. Fowler, "Hot-electron Effects and Saturation velocity in SiliconInversion Layer," J. Appl. Phys., 41, 1825, 1969.[17] E. A. Talkhan, I. R. Manour and A. I. Barboor, "Investigation of the Effect of Drift-Field-Dependent Mobility on MOSFET Characteristics," Parts I and II. IEEE Trans.on Electron Devices, ED-19(8), 899-916, 1972.C-2 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley
[18] M.C. Jeng, "Design and Modeling of Deep-Submicrometer MOSFETs," Ph. D.Dissertation, University of California.[19] K.Y. Toh, P.K. Ko and R.G. Meyer, "An Engineering Model for Short-channel MOSDevices," IEEE Jour. of Solid-State Circuits, vol. 23, No. 4, Aug. 1988.[20] C. Hu, S. Tam, F.C. Hsu, P.K. Ko, T.Y. Chan and K.W. Kyle, "Hot-Electron InducedMOSFET Degradation - Model, Monitor, Improvement," IEEE Tran. on ElectronDevices, Vol. 32, pp. 375-385, Feb. 1985.[21] F.C. Hsu, P.K. Ko, S. Tam, C. Hu and R.S. Muller, "An Analytical BreakdownModel for Short-Channel MOSFET's," IEEE Trans. on Electron Devices, Vol.ED-29, pp. 1735, Nov. 1982[22] H. J. Parke, P. K. Ko, and C. Hu, “ A Measurement-based Charge Sheet CapacitanceModel of Short-Channel MOSFET’s for SPICE,” in IEEE IEDM 86, Tech. Dig., pp.485-488, Dec. 1986.[23] M. Shur, T.A. Fjeldly, T. Ytterdal, and K. Lee, “ A Unified MOSFET Model,” Solid-State Electron., 35, pp. 1795-1802, 1992.[24] MOS9 Documentation.[25] C. F. Machala, P. C. Pattnaik and P. Yang, "An Efficient Algorithms for theExtraction of Parameters with High Confidence from Nonlinear Models," IEEEElectron Device Letters, Vol. EDL-7, no. 4, pp. 214-218, 1986.[26] Y. Tsividis and K. Suyama, “MOSFET Modeling for Analog Circuit CAD: Problemsand Prospects,” Tech. Dig. vol. CICC-93, pp. 14.1.1-14.1.6, 1993.BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley C-3
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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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Mobility Modelµeffµ=01 + ( E E )e
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Bulk Charge Effectµ eff Ev = , E <
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Strong Inversion Drain Current (Lin
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Strong Inversion Current and Output
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Subthreshold Drain CurrentV1 PSCBE2
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Effective Channel Length and Widthd
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Poly Gate Depletion EffectNgateFigu
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Poly Gate Depletion Effect1.00Tox=8
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Poly Gate Depletion EffectBSIM3v3.2
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Poly Gate Depletion Effect2-40 BSIM
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Unified Channel Charge Density Expr
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Unified Channel Charge Density Expr
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Unified Mobility Expression∆QVF(
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Unified Linear Current ExpressionI=
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Unified Vdsat ExpressionLet V ds =V
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Single Current Expression for All O
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KAPITEL 7RESULTAT OCH REKOMMENDATIO
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CHAPTER 4: Capacitance ModelingAccu
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Geometry Definition for C-V Modelin
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Methodology for Intrinsic Capacitan
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Charge-Thickness Capacitance Modelp
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Charge-Thickness Capacitance Modelw
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Extrinsic CapacitanceFigure 4-4 ill
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Extrinsic Capacitance2( V + δ ) 4
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CHAPTER 5: Non-Quasi Static Model5.
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Model FormulationFigure 5-1. Quasi-
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Model Formulationwhere elm is the E
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Model Formulationwhere i represents
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
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CHAPTER 7: Benchmark Test ResultsA
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Benchmark Test ResultsIds (A)1.E-02
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Benchmark Test Resultsgm/Ids (mho/A
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CHAPTER 8: Noise Modeling8.1 Flicke
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Flicker NoiseNlC=ox( V −V− min(
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Noise Model Flag8.3 Noise Model Fla
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CHAPTER 9: MOS Diode Modeling9.1 Di
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Diode IV ModelJssw= Js0sw⎛ E⎜
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MOS Diode Capacitance Model9.1.3 Mo
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MOS Diode Capacitance Model(9.18)Cj
Page 159 and 160: MOS Diode Capacitance Model(9.26)Cj
Page 161 and 162: MOS Diode Capacitance Model(9.32)
Page 163 and 164: APPENDIX A: Parameter ListA.1 Model
Page 165 and 166: DC ParametersSymbolsused inequation
Page 169 and 170: C-V Model ParametersSymbolsused ine
Page 171 and 172: dW and dL ParametersA.5 dW and dL P
Page 173 and 174: Temperature ParametersSymbolsused i
Page 175 and 176: Process ParametersSymbolsused inequ
Page 177 and 178: Model Parameter NotesK2( γ1−γ)(
Page 179 and 180: Model Parameter NotesCgdo = dlc * C
Page 181 and 182: APPENDIX B: Equation ListB.1 I-V Mo
Page 183 and 184: I-V ModelC C V C V D L effDL effdsc
Page 185 and 186: I-V ModelEsatsat= 2νµ effB.1.5 Ef
Page 187 and 188: I-V ModelB.1.8 Polysilicon Depletio
Page 189 and 190: Capacitance Model EquationsTRdsw( T
Page 191 and 192: Capacitance Model EquationsB.2.2.2
Page 193 and 194: Capacitance Model EquationsQ inv= 0
Page 195 and 196: Capacitance Model Equationsif (V ds
Page 197 and 198: Capacitance Model Equations⎡Q W L
Page 199 and 200: Capacitance Model EquationsVgsteff
Page 201 and 202: Capacitance Model Equations(i) 50/5
Page 203 and 204: Capacitance Model EquationsAbulk0
Page 205 and 206: Capacitance Model Equations(3) capM
Page 207 and 208: Capacitance Model EquationsδQsub=
Page 209: APPENDIX C: References[1] G.S. Gild
Page 213 and 214: [35] K.K. Hung et al, “A Physics-
Page 215 and 216: APPENDIX D: Model Parameter Binning
Page 221 and 222: AC and Capacitance ParametersD.3 AC
Page 223 and 224: NQS ParametersD.4 NQS ParametersSym
Page 225 and 226: Temperature ParametersD.6 Temperatu
Page 227 and 228: Process ParametersSymbolsused inequ
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