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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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Non-Uniform Doping and Small Channe
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Non-Uniform Doping and Small Channe
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Non-Uniform Doping and Small Channe
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Non-Uniform Doping and Small Channe
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Non-Uniform Doping and Small Channe
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Non-Uniform Doping and Small Channe
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Mobility Modelµeffµ=01 + ( E E )e
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Bulk Charge Effectµ eff Ev = , E <
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Strong Inversion Drain Current (Lin
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Strong Inversion Current and Output
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Strong Inversion Current and Output
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Strong Inversion Current and Output
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Strong Inversion Current and Output
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Subthreshold Drain CurrentV1 PSCBE2
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Effective Channel Length and Widthd
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Poly Gate Depletion EffectNgateFigu
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Poly Gate Depletion Effect1.00Tox=8
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Poly Gate Depletion EffectBSIM3v3.2
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Poly Gate Depletion Effect2-40 BSIM
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Unified Channel Charge Density Expr
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Unified Channel Charge Density Expr
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Unified Mobility Expression∆QVF(
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Unified Linear Current ExpressionI=
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Unified Vdsat ExpressionLet V ds =V
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Single Current Expression for All O
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KAPITEL 7RESULTAT OCH REKOMMENDATIO
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CHAPTER 4: Capacitance ModelingAccu
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Geometry Definition for C-V Modelin
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Methodology for Intrinsic Capacitan
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Charge-Thickness Capacitance Modelp
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Charge-Thickness Capacitance Modelw
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Extrinsic CapacitanceFigure 4-4 ill
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Extrinsic Capacitance2( V + δ ) 4
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CHAPTER 5: Non-Quasi Static Model5.
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Model FormulationFigure 5-1. Quasi-
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Model Formulationwhere elm is the E
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Model Formulationwhere i represents
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
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CHAPTER 7: Benchmark Test ResultsA
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Benchmark Test ResultsIds (A)1.E-02
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Benchmark Test ResultsIds (A)1.E-03
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Benchmark Test Resultsgm/Ids (mho/A
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Benchmark Test ResultsIds (A)8.E-05
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CHAPTER 8: Noise Modeling8.1 Flicke
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Flicker NoiseNlC=ox( V −V− min(
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- Page 163 and 164: APPENDIX A: Parameter ListA.1 Model
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- Page 171 and 172: dW and dL ParametersA.5 dW and dL P
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- Page 177 and 178: Model Parameter NotesK2( γ1−γ)(
- Page 179 and 180: Model Parameter NotesCgdo = dlc * C
- Page 181 and 182: APPENDIX B: Equation ListB.1 I-V Mo
- Page 183 and 184: I-V ModelC C V C V D L effDL effdsc
- Page 185 and 186: I-V ModelEsatsat= 2νµ effB.1.5 Ef
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- Page 189 and 190: Capacitance Model EquationsTRdsw( T
- Page 191 and 192: Capacitance Model EquationsB.2.2.2
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- Page 209 and 210: APPENDIX C: References[1] G.S. Gild
- Page 211 and 212: [18] M.C. Jeng, "Design and Modelin
- Page 213 and 214: [35] K.K. Hung et al, “A Physics-
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- Page 221 and 222: AC and Capacitance ParametersD.3 AC
- Page 223 and 224: NQS ParametersD.4 NQS ParametersSym
- Page 225 and 226: Temperature ParametersD.6 Temperatu
- Page 227 and 228: Process ParametersSymbolsused inequ