13.07.2015 Views

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

Capacitance <strong>Model</strong> Equ<strong>at</strong>ionsQsWactive LactiveCox=−⎛ AVgsteff cv bulk '2⎜− V⎝ 2ds⎞⎟⎠2⎛ 422⎜V − V A V + V A V − A V⎝ 3315( ' ) ( ' ) ( ' )3 2 2 3gsteffcv gstefcvf bulk ds gsteffcv bulk ds bulk ds⎞⎟⎠Q =− ( Q + Q + Q )d g b s(iii) 0/100 Channel-charge Partition⎛⎜( )Q W L C V gstefcv Abulk Vds Abulk Vdss=− ⎜''active active ox+ −2 4 ⎛ A⎜24⎜Vgsteffcv−⎝⎝ 22bulk'Vds⎞⎟⎟⎞⎟⎠⎟⎠Q =− ( Q + Q + Q )d g b sif (V ds > V ds<strong>at</strong> )VQ = Q + W L C⎛1⎜V−⎝ 3g g active active ox gsteff cv ds<strong>at</strong>⎞⎟⎠( gsteffcv − ds<strong>at</strong> )Q Q W L C V Vb = b1 − active active ox3<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley B-20

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!