BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
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DC ParametersSymbolsused inequ<strong>at</strong>ionSymbolsused inSPICEDescription Default Unit NoteRdsw rdsw Parasitic resistance per unitwidth0.0 Ω-µm WrPrwb prwb Body effect coefficient <strong>of</strong> Rdsw 0 V -1/2Prwg prwg G<strong>at</strong>e bias effect coefficient <strong>of</strong>RdswWr wr Width Offset from Weff forRds calcul<strong>at</strong>ionWint wint Width <strong>of</strong>fset fitting parameterfrom I-V without biasLint lint Length <strong>of</strong>fset fitting parameterfrom I-V without biasdWg dwg Coefficient <strong>of</strong> Weff’s g<strong>at</strong>edependencedWb dwb Coefficient <strong>of</strong> Weff’s substr<strong>at</strong>ebody bias dependenceV<strong>of</strong>f v<strong>of</strong>f Offset voltage in the subthresholdregion <strong>at</strong> large W and L0 1/V1.0 none0.0 m0.0 m0.0 m/V0.0 m/V 1/2-0.08 VNfactor nfactor Subthreshold swing factor 1.0 noneEta0 eta0 DIBL coefficient in subthresholdregion0.08 noneEtab etab Body-bias coefficient for the -0.07 1/Vsubthreshold DIBL effectDsub dsub DIBL coefficient exponent in drout nonesubthreshold regionCit cit Interface trap capacitance 0.0 F/m 2Cdsc cdsc Drain/Source to channel couplingcapacitance2.4E-4 F/m 2A-4 <strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley
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