BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
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APPENDIX D: <strong>Model</strong> Parameter BinningBelow is the inform<strong>at</strong>ion on parameter binning regarding which model parameters can orcannot be binned. All those parameters which can be binned follow this implement<strong>at</strong>ion:PPLP +L= 0effP+WWeff+LeffP× WeffFor example, for the parameter k1: P 0 = k1, P L = lk1, P W = wk1, P P = pk1. binUnit is abining unit selector. If binUnit = 1, the units <strong>of</strong> L eff and W eff used in the binning equ<strong>at</strong>ionabove have the units <strong>of</strong> microns; therwise in meters.For example, for a device with L eff = 0.5µm and W eff = 10µm. If binUnit = 1, the parametervalues for vs<strong>at</strong> are 1e5, 1e4, 2e4, and 3e4 for vs<strong>at</strong>, lvs<strong>at</strong>, wvs<strong>at</strong>, and pvs<strong>at</strong>, respectively.<strong>The</strong>refore, the effective value <strong>of</strong> vs<strong>at</strong> for this device isvs<strong>at</strong> = 1e5 + 1e4/0.5 + 2e4/10 + 3e4/(0.5*10) = 1.28e5To get the same effective value <strong>of</strong> vs<strong>at</strong> for binUnit = 0, the values <strong>of</strong> vs<strong>at</strong>, lvs<strong>at</strong>, wvs<strong>at</strong>, andpvs<strong>at</strong> would be 1e5, 1e-2, 2e-2, 3e-8, respectively. Thus,vs<strong>at</strong> = 1e5 + 1e-2/0.5e6 + 2e-2/10e-6 + 3e-8/(0.5e-6 * 10e-6) = 1.28e5<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley D-1
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