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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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- Page 26 and 27: Non-Uniform Doping and Small Channe
- Page 28 and 29: Mobility Modelµeffµ=01 + ( E E )e
- Page 30 and 31: Bulk Charge Effectµ eff Ev = , E <
- Page 32 and 33: Strong Inversion Drain Current (Lin
- Page 34 and 35: Strong Inversion Current and Output
- Page 36 and 37: Strong Inversion Current and Output
- Page 38 and 39: Strong Inversion Current and Output
- Page 40 and 41: Strong Inversion Current and Output
- Page 42 and 43: Subthreshold Drain CurrentV1 PSCBE2
- Page 44 and 45: Effective Channel Length and Widthd
- Page 46 and 47: Poly Gate Depletion EffectNgateFigu
- Page 48 and 49: Poly Gate Depletion Effect1.00Tox=8
- Page 50 and 51: Poly Gate Depletion EffectBSIM3v3.2
- Page 52 and 53: Poly Gate Depletion Effect2-40 BSIM
- Page 54 and 55: Unified Channel Charge Density Expr
- Page 56 and 57: Unified Channel Charge Density Expr
- Page 58 and 59: Unified Mobility Expression∆QVF(
- Page 60 and 61: Unified Linear Current ExpressionI=
- Page 62 and 63: Unified Vdsat ExpressionLet V ds =V
- Page 64 and 65: Single Current Expression for All O
- Page 68 and 69: A Note on Vbs3-16 BSIM3v3.2.2 Manua
- Page 70 and 71: Geometry Definition for C-V Modelin
- Page 72 and 73: Methodology for Intrinsic Capacitan
- Page 74 and 75: Methodology for Intrinsic Capacitan
- Page 76 and 77: Methodology for Intrinsic Capacitan
- Page 78 and 79: Methodology for Intrinsic Capacitan
- Page 80 and 81: Methodology for Intrinsic Capacitan
- Page 82 and 83: Charge-Thickness Capacitance Modelc
- Page 84 and 85: Charge-Thickness Capacitance Model(
- Page 86 and 87: Charge-Thickness Capacitance Modelr
- Page 88 and 89: Extrinsic Capacitancewhere t poly i
- Page 90 and 91: Extrinsic CapacitanceCGS0 = 0 (if t
- Page 92 and 93: Model Formulation5.3 Model Formulat
- Page 94 and 95: Model FormulationQ defi cheq (t)C=1
- Page 96 and 97: Model FormulationQdef() t = Q () t
- Page 98 and 99: Model FormulationOther conductances
- Page 100 and 101: Extraction Strategiesdevice perform
- Page 102 and 103: Extraction Procedureeffects. Regard
- Page 104 and 105: Extraction Procedure( m + 1) ( m) (
- Page 106 and 107: Extraction ProcedureStep 4Extracted
- Page 108 and 109: Extraction ProcedureC dscdFitting T
- Page 110 and 111: Extraction ProcedureStep 17Extracte
- Page 112 and 113: Notes on Parameter Extraction6.4 No
- Page 114 and 115: Notes on Parameter Extractionni= 1.
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Notes on Parameter ExtractionBSIM3v
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Extraction Strategiesdevice perform
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Extraction Procedureeffects. Regard
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Extraction Procedure( m + 1) ( m) (
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Extraction ProcedureStep 4Extracted
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Extraction ProcedureC dscdFitting T
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Extraction ProcedureStep 17Extracte
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Notes on Parameter Extraction6.4 No
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Notes on Parameter Extractionni= 1.
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Notes on Parameter ExtractionBSIM3v
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Benchmark Test ResultsDevice Size B
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Benchmark Test ResultsIds (A)1.0E+0
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Benchmark Test ResultsIds (A)1.E-03
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Benchmark Test Resultsgm/Ids (mho/A
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Benchmark Test ResultsIds (A)9.E-03
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Flicker Noise8.1.2 Formulations1. F
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Channel Thermal NoiseSNoia⋅Vtmwi=
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Noise Model FlagBSIM3v3.2.2 Manual
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Diode IV ModelIf V bs < VjsmIbs= I
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Diode IV Model(9.9)Ibd= I⎛⎜⎝
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MOS Diode Capacitance ModelOtherwis
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MOS Diode Capacitance ModelIf P d >
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MOS Diode Capacitance Model9.2.3 Te
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MOS Diode Capacitance ModelSymbolsu
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DC ParametersSymbolsused inequation
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DC ParametersSymbolsused inequation
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C-V Model ParametersSymbolsused ine
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NQS ParametersSymbolsused inequatio
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Temperature ParametersSymbolsused i
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Flicker Noise Model ParametersSymbo
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Geometry Range ParametersA.9 Geomet
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Model Parameter NotesnI-4. If N ch
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Model Parameter NotesBSIM3v3.2.2 Ma
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I-V Modellt = ε siXdep / Cox ( 1 +
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I-V ModelB.1.4 Drain Saturation Vol
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I-V ModelVADIBLC=θ( Vgsteff+ 2vt)t
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I-V Model'Weff= Wdrawn−2dW'dW = d
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Capacitance Model EquationsB.2.2 Ov
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Capacitance Model EquationsB.2.2.3
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Capacitance Model Equations2 2Abulk
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Capacitance Model Equations4Qd =−
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Capacitance Model Equationswhere th
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Capacitance Model EquationsQsWactiv
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Capacitance Model Equationswhere th
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Capacitance Model EquationsB.2.3.1
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Capacitance Model EquationsΦ⎛⎜
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Capacitance Model EquationsQDWLC=
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[9] J.D. Kendall and A.R. Boothroyd
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[27] C. L. Huang and G. Sh. Gildenb
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C-6 BSIM3v3.2.2 Manual Copyright ©
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Model Control ParametersD.1 Model C
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DC ParametersSymbolsused inequation
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DC ParametersSymbolsused inequation
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AC and Capacitance ParametersSymbol
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dW and dL ParametersSymbolsused ine
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Flicker Noise Model ParametersSymbo
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Geometry Range ParametersD.9 Geomet