BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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Capacitance Model EquationsB.2.2.3 Gate Overlap Charge( )Q =− Q + Qoverlap,g overlap,s overlap,dB.2.3 Instrinsic Charges(1) capMod = 0a. Accumulation region (V gs < V fbcv + V bs )Qg= WactiveLactiveCox( V −V−V)gsbsfbcvQ= −subQ gQ inv= 0b. Subthreshold region (V gs < V th )Qsub0( V −V−V)2K ⎛ 41ox= − ⋅ ⎜gsWactiveLactiveCox−1+1+⎜22⎝K1oxfbcvbs⎞⎟⎟⎠Qg=−QbB-12 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley
Capacitance Model EquationsQ inv= 0c. Strong inversion (V gs > V th )Vgs−VthVdsat,cv=Abulk'CLE⎛⎞⎜ ⎛ CLC ⎞A ⎟bulk' = Abulk01+⎜⎜⎟⎟⎝ ⎝ Leff ⎠ ⎠⎛K ⎛ A Loxeff BA⎜1 ⎜ 00bulk0=⎜1++2 ΦWs−V⎜bseffLeffXJXdep eff+ B⎝⎝+ 2'Vth= Vfbcv+ Φs+ K1oxΦs−Vbseff(i) 50/50 Charge partitionIf V ds < V dsat1⎞⎞⎟⎟1⋅⎟⎟1+KetaV⎠⎠bseffQ = C WgoxLactive active⎛⎜⎜V⎜⎜⎝gs−VfbcvVds−Φs−2+⎛12⎜V⎝gsAbulk−Vth2' VdsAbulk'V−2ds⎞⎟⎟⎞⎟⎟⎟⎠⎠BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley B-13
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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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Mobility Modelµeffµ=01 + ( E E )e
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Bulk Charge Effectµ eff Ev = , E <
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Strong Inversion Drain Current (Lin
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Strong Inversion Current and Output
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Subthreshold Drain CurrentV1 PSCBE2
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Effective Channel Length and Widthd
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Poly Gate Depletion EffectNgateFigu
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Poly Gate Depletion Effect1.00Tox=8
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Poly Gate Depletion EffectBSIM3v3.2
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Poly Gate Depletion Effect2-40 BSIM
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Unified Channel Charge Density Expr
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Unified Channel Charge Density Expr
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Unified Mobility Expression∆QVF(
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Unified Linear Current ExpressionI=
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Unified Vdsat ExpressionLet V ds =V
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Single Current Expression for All O
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KAPITEL 7RESULTAT OCH REKOMMENDATIO
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CHAPTER 4: Capacitance ModelingAccu
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Geometry Definition for C-V Modelin
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Methodology for Intrinsic Capacitan
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Charge-Thickness Capacitance Modelp
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Charge-Thickness Capacitance Modelw
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Extrinsic CapacitanceFigure 4-4 ill
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Extrinsic Capacitance2( V + δ ) 4
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CHAPTER 5: Non-Quasi Static Model5.
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Model FormulationFigure 5-1. Quasi-
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Model Formulationwhere elm is the E
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Model Formulationwhere i represents
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
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CHAPTER 7: Benchmark Test ResultsA
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Benchmark Test ResultsIds (A)1.E-02
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Benchmark Test ResultsIds (A)1.E-03
Page 141 and 142: Benchmark Test Resultsgm/Ids (mho/A
Page 143 and 144: Benchmark Test ResultsIds (A)8.E-05
Page 145 and 146: CHAPTER 8: Noise Modeling8.1 Flicke
Page 147 and 148: Flicker NoiseNlC=ox( V −V− min(
Page 149 and 150: Noise Model Flag8.3 Noise Model Fla
Page 151 and 152: CHAPTER 9: MOS Diode Modeling9.1 Di
Page 153 and 154: Diode IV ModelJssw= Js0sw⎛ E⎜
Page 155 and 156: MOS Diode Capacitance Model9.1.3 Mo
Page 157 and 158: MOS Diode Capacitance Model(9.18)Cj
Page 159 and 160: MOS Diode Capacitance Model(9.26)Cj
Page 161 and 162: MOS Diode Capacitance Model(9.32)
Page 163 and 164: APPENDIX A: Parameter ListA.1 Model
Page 165 and 166: DC ParametersSymbolsused inequation
Page 169 and 170: C-V Model ParametersSymbolsused ine
Page 171 and 172: dW and dL ParametersA.5 dW and dL P
Page 173 and 174: Temperature ParametersSymbolsused i
Page 175 and 176: Process ParametersSymbolsused inequ
Page 177 and 178: Model Parameter NotesK2( γ1−γ)(
Page 179 and 180: Model Parameter NotesCgdo = dlc * C
Page 181 and 182: APPENDIX B: Equation ListB.1 I-V Mo
Page 183 and 184: I-V ModelC C V C V D L effDL effdsc
Page 185 and 186: I-V ModelEsatsat= 2νµ effB.1.5 Ef
Page 187 and 188: I-V ModelB.1.8 Polysilicon Depletio
Page 189 and 190: Capacitance Model EquationsTRdsw( T
Page 191: Capacitance Model EquationsB.2.2.2
Page 195 and 196: Capacitance Model Equationsif (V ds
Page 197 and 198: Capacitance Model Equations⎡Q W L
Page 199 and 200: Capacitance Model EquationsVgsteff
Page 201 and 202: Capacitance Model Equations(i) 50/5
Page 203 and 204: Capacitance Model EquationsAbulk0
Page 205 and 206: Capacitance Model Equations(3) capM
Page 207 and 208: Capacitance Model EquationsδQsub=
Page 209 and 210: APPENDIX C: References[1] G.S. Gild
Page 211 and 212: [18] M.C. Jeng, "Design and Modelin
Page 213 and 214: [35] K.K. Hung et al, “A Physics-
Page 215 and 216: APPENDIX D: Model Parameter Binning
Page 221 and 222: AC and Capacitance ParametersD.3 AC
Page 223 and 224: NQS ParametersD.4 NQS ParametersSym
Page 225 and 226: Temperature ParametersD.6 Temperatu
Page 227 and 228: Process ParametersSymbolsused inequ
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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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