BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
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[27] C. L. Huang and G. Sh. Gildenbl<strong>at</strong>, "Measurements and <strong>Model</strong>ing <strong>of</strong> the n-channel<strong>MOSFET</strong> Inversion Layer Mobility and Device Characteristics in the Temper<strong>at</strong>ureRange 60-300 K," IEEE Tran. on Electron Devices, vol. ED-37, no.5, pp. 1289-1300, 1990.[28] D. S. Jeon, et al, IEEE Tran. on Electron Devices, vol. ED-36, no. 8, pp1456-1463,1989.[29] S. M. Sze, Physics <strong>of</strong> Semiconductor Devices, 2nd Edition.[30] P. Gray and R. Meyer, Analysis and Design <strong>of</strong> Analog Integr<strong>at</strong>ed Circuits, SecondEdition.[31] R. Rios, N. D. Arora, C.-L. Huang, N. Khalil, J. Faricelli, and L. Gruber, “A physicalcompact <strong>MOSFET</strong> model, including quantum mechanical effects, for st<strong>at</strong>isticalcircuit design applic<strong>at</strong>ions”, IEDM Tech. Dig., pp. 937-940, 1995.[32] Weidong Liu, Xiaodong Jin, Ya-Chin King, and Chenming Hu, “An efficient andaccur<strong>at</strong>e compact model for thin-oxide-<strong>MOSFET</strong> intrinsic capacitance consideringthe finite charge layer thickness”, IEEE Trans. on Electron Devices, vol. ED-46,May, 1999.[33] Mansun Chan, et al, "A Relax<strong>at</strong>ion time Approach to <strong>Model</strong> the Non-Quasi-St<strong>at</strong>icTransient Effects in <strong>MOSFET</strong>s," IEDM, 1994 Technical Digest, pp. 169-172, Dec.1994.[34] P. K. Ko, “Hot-electron Effects in <strong>MOSFET</strong>’s”, Ph. D Dissert<strong>at</strong>ion, <strong>University</strong> <strong>of</strong>California, Berkeley, 1982C-4 <strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley
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