BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
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Charge-Thickness Capacitance <strong>Model</strong>represents the boundary conditions (the average <strong>of</strong> the electric fields <strong>at</strong> the top andthe bottom <strong>of</strong> the charge layers) <strong>of</strong> the Schrodinger and the Poisson equ<strong>at</strong>ions.Inversion Charge Thickness (A)7060Tox=20A Tox=50ATox=70A Tox=90ASolid - Nsub=2e16cm -350Open - Nsub=2e17cm -340+ - Nsub=2e18cm -330<strong>Model</strong>2010-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0(Vgsteff+4(Vth-Vfb-2Φ f))/Tox (MV/cm)Figure 4-3. For all Tox and Nsub, modeled inversion charge thickness agrees with numericalquantum simul<strong>at</strong>ions.(iii) Body charge thichness in inversionIn inversion region, the body charge thickness effect is accur<strong>at</strong>ely modeled byincluding the devi<strong>at</strong>ion <strong>of</strong> the surface potential from 2 [32]Φ sΦ B( V , + 2K12Φ)⎛V⎞⎜gsteffcv , ⋅gsteffcv ox BΦ =Φ −2Φ= ln+ 1⎟δ s Bνt⎜2⎟⎝moin⋅K1oxνt ⎠(4.4.5)where the model parameter moin (defaulting to 15) is introduced for better fit todifferent technologies. <strong>The</strong> inversion channel charge density is therefore derivedasqinv,( V )= −Coxeff⋅gsteffcv−Φ δ(4.4.6)4-18 <strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley
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