BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
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MOS Diode Capacitance <strong>Model</strong>9.1.3 <strong>Model</strong> Parameter Lists<strong>The</strong> diode DC model parameters are listed in Table 9-1.Symbolsused inequ<strong>at</strong>ionSymbolsused inSPICEDescription Default UnitJs0 js S<strong>at</strong>ur<strong>at</strong>ion current density 1e-4 A/m 2Js0sw jssw Side wall s<strong>at</strong>ur<strong>at</strong>ion current density 0 A/mNJ nj Emission coefficient 1 noneXTI xti Junction current temper<strong>at</strong>ure exponent3.0 nonecoefficientijth ijth Limiting current 0.1 ATable 9-1. MOS diode model parameters.9.2 MOS Diode Capacitance <strong>Model</strong>Source and drain junction capacitance can be divided into two components:the junction bottom area capacitance C jb and the junction peripherycapacitance C jp . <strong>The</strong> formula for both the capacitances is similar, but withdifferent model parameters. <strong>The</strong> equ<strong>at</strong>ion <strong>of</strong> C jb includes the parameterssuch as C j , M j , and P b . <strong>The</strong> equ<strong>at</strong>ion <strong>of</strong> C jp includes the parameters such asC jsw , M jsw , P bsw , C jswg , M jswg , and P bswg .9.2.1 S/B Junction Capacitance<strong>The</strong> S/B junction capacitance can be calcul<strong>at</strong>ed byIf P s > W eff(9.14)sjbs( Ps−Weff) CjbsswWeffCjbsswgCapbs = A C ++<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley 9-5
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