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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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CHAPTER 6: Parameter ExtractionParameter extraction is an important part <strong>of</strong> model development. Many differentextraction methods have been developed [23, 24]. <strong>The</strong> appropri<strong>at</strong>e methodology dependson the model and on the way the model is used. A combin<strong>at</strong>ion <strong>of</strong> a local optimiz<strong>at</strong>ion andthe group device extraction str<strong>at</strong>egy is adopted for parameter extraction.6.1 Optimiz<strong>at</strong>ion str<strong>at</strong>egy<strong>The</strong>re are two main, different optimiz<strong>at</strong>ion str<strong>at</strong>egies: global optimiz<strong>at</strong>ion andlocal optimiz<strong>at</strong>ion. Global optimiz<strong>at</strong>ion relies on the explicit use <strong>of</strong> a computer t<strong>of</strong>ind one set <strong>of</strong> model parameters which will best fit the available experimental(measured) d<strong>at</strong>a. This methodology may give the minimum average error betweenmeasured and simul<strong>at</strong>ed (calcul<strong>at</strong>ed) d<strong>at</strong>a points, but it also tre<strong>at</strong>s each parameteras a "fitting" parameter. Physical parameters extracted in such a manner mightyield values th<strong>at</strong> are not consistent with their physical intent.In local optimiz<strong>at</strong>ion, many parameters are extracted independently <strong>of</strong> oneanother. Parameters are extracted from device bias conditions which correspond todominant physical mechanisms. Parameters which are extracted in this mannermight not fit experimental d<strong>at</strong>a in all the bias conditions. Nonetheless, theseextraction methodologies are developed specifically with respect to a givenparameter’s physical meaning. If properly executed, it should, overall, predict<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley 6-1

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