BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

DC ParametersSymbolsused inequationSymbolsused inSPICEDescriptionCan BeBinned?dWg dwg Coefficient of Weff’s gatedependencedWb dwb Coefficient of Weff’s substratebody bias dependenceVoff voff Offset voltage in the subthresholdregion for large W and LYESYESYESNfactor nfactor Subthreshold swing factor YESEta0 eta0 DIBL coefficient in subthresholdregionYESEtab etab Body-bias coefficient for the YESsubthreshold DIBL effectDsub dsub DIBL coefficient exponent in YESsubthreshold regionCit cit Interface trap capacitance YESCdsc cdsc Drain/Source to channel couplingcapacitanceYESCdscb cdscb Body-bias sensitivity of Cdsc YESCdscd cdscd Drain-bias sensitivity of Cdsc YESPclm pclm Channel length modulationparameterPdiblc1 pdiblc1 First output resistance DIBLeffect correction parameterPdiblc2 pdiblc2 Second output resistance DIBLeffect correction parameterPdiblcb pdiblcb Body effect coefficient ofDIBL correction parametersYESYESYESYESBSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley D-5