BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

Capacitance Model EquationsB.2.3.1 50/50 Charge partition⎛⎜W L C AAactive active oxQs Qd QinvVgsteff cv bulk= = =− ⎜ '05 .− Vcveff+2 ⎜ 2 ⎛⎜12⎜V⎝⎝V2 2bulk cveffgsteffcv'A−2bulkVcveff⎞⎟⎟⎞⎟⎟⎟⎠⎠B.2.3.2 40/60 Channel-charge PartitionQ22( ' ) ( ' ) ( ' )WactiveLactiveCoxQs=−⎛ 3 4 2⎜V − V A V + V A V −2A V⎛ AVgsteff cv bulk ⎞ ⎝gsteffc'33152⎜− Vcveff ⎟⎝ 2 ⎠d2 3gsteffcv gstefcvf bulk cveff gsteff bulk cveff bulk cveff1( ' ) ( ' ) ( ' )WactiveLactiveCox=−⎛ 3 5 2V − V A V + V A V −2⎜A V⎛ Abulk⎞ ⎝gsteffc'352⎜Vgsteffcv− Vcveff ⎟⎝ 2 ⎠gsteffcv gsteff cv bulk cveff gsteff cv bulk cveff bulk cveff⎞⎟⎠2 3⎞⎟⎠B.2.3.3 0/100 Charge Partition⎛⎜Q W L C V gsteffcv A V A Vgstefcvf bulk'cveff bulk cveffs=− ⎜active active ox+ −2 4 ⎛ A⎜24⎜Vgsteffcv−⎝⎝ 2( ' )bulk2'V⎛( )Q W L C V A V A V2⎜gsteffcv3bulk'cveff bulk'cveffd=− ⎜active active ox− +2 4 ⎛ Abulk'⎜8⎜Vgsteffcv− V⎝⎝ 2cveffcveff⎞⎟⎟⎞⎟⎠⎟⎠⎞⎟⎟⎞⎟⎠⎟⎠BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley B-24