BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
DC ParametersSymbolsused inequ<strong>at</strong>ionSymbolsused inSPICEDescription Default Unit NoteCdscb cdscb Body-bias sensitivity <strong>of</strong> Cdsc 0.0 F/Vm 2Cdscd cdscd Drain-bias sensitivity <strong>of</strong> Cdsc 0.0 F/Vm 2Pclm pclm Channel length modul<strong>at</strong>ionparameterPdiblc1 pdiblc1 First output resistance DIBLeffect correction parameterPdiblc2 pdiblc2 Second output resistance DIBLeffect correction parameterPdiblcb pdiblcb Body effect coefficient <strong>of</strong>DIBL correction parametersDrout drout L dependence coefficient <strong>of</strong> theDIBL correction parameter inRoutPscbe1 pscbe1 First substr<strong>at</strong>e current bodyeffectparameterPscbe2 pscbe2 Second substr<strong>at</strong>e current bodyeffectparameterPvag pvag G<strong>at</strong>e dependence <strong>of</strong> Early voltage1.3 none0.39 none0.0086 none0 1/V0.56 none4.24E8 V/m1.0E-5 m/V nI-30.0 noneδ delta Effective Vds parameter 0.01 VNg<strong>at</strong>e ng<strong>at</strong>e poly g<strong>at</strong>e doping concentr<strong>at</strong>ion 0 cm -3α0 alpha0 <strong>The</strong> first parameter <strong>of</strong> impactioniz<strong>at</strong>ion currentα1 alpha1 Isub parameter for length scalingβ0 beta0 <strong>The</strong> second parameter <strong>of</strong> impactioniz<strong>at</strong>ion current0 m/V0.0 1/V30 V<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley A-5
Change language