BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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DC ParametersSymbolsused inequationSymbolsused inSPICEVth0 vth0 Threshold voltage @Vbs=0 forLarge L.Description Default Unit Note0.7(NMOS)-0.7(PMOS)VFB vfb Flat-band voltage Calculated V nI-1K1 k1 First order body effect coefficient0.5 V 1/2 nI-2K2 k2 Second order body effect coefficient0.0 none nI-2K3 k3 Narrow width coefficient 80.0 noneK3b k3b Body effect coefficient of k3 0.0 1/VW0 w0 Narrow width parameter 2.5e-6 mNlx nlx Lateral non-uniform doping 1.74e-7 mparameterVbm vbm Maximum applied body bias in -3.0 VVth calculationDvt0 dvt0 first coefficient of short-channeleffect on Vth2.2 noneDvt1 dvt1 Second coefficient of shortchanneleffect on VthDvt2 dvt2 Body-bias coefficient of shortchanneleffect on VthDvt0w dvt0w First coefficient of narrowwidth effect on Vth for smallchannel lengthDvt1w dvtw1 Second coefficient of narrowwidth effect on Vth for smallchannel lengthV0.53 none-0.032 1/V0 1/m5.3e6 1/mnI-1A-2 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley
DC ParametersSymbolsused inequationSymbolsused inSPICEDescription Default Unit NoteDvt2w dvt2w Body-bias coefficient of narrowwidth effect for small channellengthµ0 u0 Mobility at Temp = TnomNMOSFETPMOSFETUa ua First-order mobility degradationcoefficientUb ub Second-order mobility degradationcoefficientUc uc Body-effect of mobility degradationcoefficient-0.032 1/V670.0250.02.25E-9cm 2 /Vsm/V5.87E-19 (m/V) 2mobMod=1, 2:-4.65e-11mobMod=3:-0.046m/V 21/Vνsat vsat Saturation velocity at Temp =TnomA0 a0 Bulk charge effect coefficientfor channel length8.0E4 m/sec1.0 noneAgs ags gate bias coefficient of Abulk 0.0 1/VB0 b0 Bulk charge effect coefficientfor channel width0.0 mB1 b1 Bulk charge effect width offset 0.0 mKeta keta Body-bias coefficient of bulk -0.047 1/Vcharge effectA1 a1 First non-saturation effect0.0 1/VparameterA2 a2 Second non-saturation factor 1.0 noneBSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley A-3
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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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Mobility Modelµeffµ=01 + ( E E )e
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Bulk Charge Effectµ eff Ev = , E <
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Strong Inversion Drain Current (Lin
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Strong Inversion Current and Output
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Subthreshold Drain CurrentV1 PSCBE2
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Effective Channel Length and Widthd
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Poly Gate Depletion EffectNgateFigu
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Poly Gate Depletion Effect1.00Tox=8
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Poly Gate Depletion EffectBSIM3v3.2
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Poly Gate Depletion Effect2-40 BSIM
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Unified Channel Charge Density Expr
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Unified Channel Charge Density Expr
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Unified Mobility Expression∆QVF(
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Unified Linear Current ExpressionI=
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Unified Vdsat ExpressionLet V ds =V
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Single Current Expression for All O
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KAPITEL 7RESULTAT OCH REKOMMENDATIO
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CHAPTER 4: Capacitance ModelingAccu
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Geometry Definition for C-V Modelin
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Methodology for Intrinsic Capacitan
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Charge-Thickness Capacitance Modelp
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Charge-Thickness Capacitance Modelw
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Extrinsic CapacitanceFigure 4-4 ill
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Extrinsic Capacitance2( V + δ ) 4
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CHAPTER 5: Non-Quasi Static Model5.
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Model FormulationFigure 5-1. Quasi-
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Model Formulationwhere elm is the E
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Model Formulationwhere i represents
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
Page 113 and 114: Notes on Parameter Extraction6.4.2
Page 115 and 116: Notes on Parameter ExtractionnC-1.
Page 117 and 118: CHAPTER 6: Parameter ExtractionPara
Page 119 and 120: Extraction ProcedureWOrthogonal Set
Page 121 and 122: Extraction ProcedureInitial Guess o
Page 123 and 124: Extraction Procedureoptimization. (
Page 125 and 126: Extraction ProcedureStep 7Extracted
Page 127 and 128: Extraction ProcedureB0, B1Fitting T
Page 129 and 130: Extraction ProcedureStep 20Extracte
Page 131 and 132: Notes on Parameter Extraction6.4.2
Page 133 and 134: Notes on Parameter ExtractionnC-1.
Page 135 and 136: CHAPTER 7: Benchmark Test ResultsA
Page 137 and 138: Benchmark Test ResultsIds (A)1.E-02
Page 141 and 142: Benchmark Test Resultsgm/Ids (mho/A
Page 145 and 146: CHAPTER 8: Noise Modeling8.1 Flicke
Page 147 and 148: Flicker NoiseNlC=ox( V −V− min(
Page 149 and 150: Noise Model Flag8.3 Noise Model Fla
Page 151 and 152: CHAPTER 9: MOS Diode Modeling9.1 Di
Page 153 and 154: Diode IV ModelJssw= Js0sw⎛ E⎜
Page 155 and 156: MOS Diode Capacitance Model9.1.3 Mo
Page 157 and 158: MOS Diode Capacitance Model(9.18)Cj
Page 159 and 160: MOS Diode Capacitance Model(9.26)Cj
Page 161 and 162: MOS Diode Capacitance Model(9.32)
Page 163: APPENDIX A: Parameter ListA.1 Model
Page 167 and 168: DC ParametersSymbolsused inequation
Page 169 and 170: C-V Model ParametersSymbolsused ine
Page 171 and 172: dW and dL ParametersA.5 dW and dL P
Page 173 and 174: Temperature ParametersSymbolsused i
Page 175 and 176: Process ParametersSymbolsused inequ
Page 177 and 178: Model Parameter NotesK2( γ1−γ)(
Page 179 and 180: Model Parameter NotesCgdo = dlc * C
Page 181 and 182: APPENDIX B: Equation ListB.1 I-V Mo
Page 183 and 184: I-V ModelC C V C V D L effDL effdsc
Page 185 and 186: I-V ModelEsatsat= 2νµ effB.1.5 Ef
Page 187 and 188: I-V ModelB.1.8 Polysilicon Depletio
Page 189 and 190: Capacitance Model EquationsTRdsw( T
Page 191 and 192: Capacitance Model EquationsB.2.2.2
Page 193 and 194: Capacitance Model EquationsQ inv= 0
Page 195 and 196: Capacitance Model Equationsif (V ds
Page 197 and 198: Capacitance Model Equations⎡Q W L
Page 199 and 200: Capacitance Model EquationsVgsteff
Page 201 and 202: Capacitance Model Equations(i) 50/5
Page 203 and 204: Capacitance Model EquationsAbulk0
Page 205 and 206: Capacitance Model Equations(3) capM
Page 207 and 208: Capacitance Model EquationsδQsub=
Page 209 and 210: APPENDIX C: References[1] G.S. Gild
Page 211 and 212: [18] M.C. Jeng, "Design and Modelin
Page 213 and 214: [35] K.K. Hung et al, “A Physics-
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APPENDIX D: Model Parameter Binning
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DC ParametersSymbolsused inequation
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DC ParametersSymbolsused inequation
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AC and Capacitance ParametersD.3 AC
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NQS ParametersD.4 NQS ParametersSym
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Temperature ParametersD.6 Temperatu
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Process ParametersSymbolsused inequ
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