BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
C-V <strong>Model</strong> ParametersSymbolsused inequ<strong>at</strong>ionSymbolsused inSPICEDescriptionMj mj Bottom junction capacitancegr<strong>at</strong>ing coefficientMjsw mjsw Source/Drain side wall junctioncapacitance grading coefficientCjsw cjsw Source/Drain side wall junctioncapacitance per unit areaCjswg cjswg Source/drain g<strong>at</strong>e side walljunction capacitance gradingcoefficientMjswg mjswg Source/drain g<strong>at</strong>e side walljunction capacitance gradingcoefficientDefault Unit Note0.50.33 none5.E-10CjswMjswF/mF/mnonePbsw pbsw Source/drain side wall junction1.0 Vbuilt-in potentialPb pb Bottom built-in potential 1.0 VPbswg pbswg Source/Drain g<strong>at</strong>e side wall Pbsw Vjunction built-in potentialCGS1 cgs1 Light doped source-g<strong>at</strong>e 0.0 F/mregion overlap capacitanceCGD1 cgd1 Light doped drain-g<strong>at</strong>e region 0.0 F/moverlap capacitanceCKAPPA ckappa Coefficient for lightly dopedregion overlapcapacitance Fringing fieldcapacitance0.6 VCf cf fringing field capacitance calcul<strong>at</strong>ed F/m nC-3CLC clc Constant term for the short 0.1E-6 mchannel modelCLE cle Exponential term for the shortchannel model0.6 none<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley A-7
Change language