BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

Extraction ProcedureC dscdFitting Target Exp. Data: Subthresholdregion I ds (V gs , V bs )One Set of Devices (Large and Fixed W &Different L).I ds vs. V gs @ V bs = V bb at Different V dsStep 11Extracted Parameters & Fitting TargetDatadWbFitting Target Exp. Data: Strong Inversionregion I ds (V gs , V bs )Devices & Experimental DataOne Set of Devices (Large and Fixed W &Different L).I ds vs. V gs @ V ds = 0.05V at Different V bsStep 12Extracted Parameters & Fitting TargetDatav sat , A 0 , A gsFitting Target Exp. Data: I sat (V gs , V bs )/WDevices & Experimental DataOne Set of Devices (Large and Fixed W &Different L).I ds vs. V ds @ V bs = 0V at Different V gsA 1 , A 2 (PMOS Only)Fitting Target Exp. Data V asat (V gs )Step 13Extracted Parameters & Fitting TargetDataDevices & Experimental Data6-10 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley