BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

I-V ModelB.1.4 Drain Saturation VoltageFor R ds > 0 or λ ≠ 1:b b acVdsat = − − 2− 42aa = A W ν C R + ( −1)Aλ1bulk 2 eff sat ox DS bulk⎛2b =− ⎜( V + 2v )( − 1) + A E L + 3A ( V + 2v ) W ν C R⎝λgsteff t bulk sat eff bulk gsteff t eff sat ox DS⎞⎟⎠2c = ( V + 2v) E L + 2( V + 2v)W ν C Rgsteff t sat eff gsteff t eff sat ox DSFor R ds = 0 and λ = 1:λ = AVgsteff+ A1 2Vdsat=Esat Leff ( Vgsteff + 2vt)Abulk Esat Leff + ( Vgsteff + 2vt)Abulk⎛⎜= ⎜1+⎜ 2⎝K1oxΦ −Vsbseff⎛⎜⎜L⎝effA L0+ 2effX XJdep⎛⎜⎜1−A V⎝gs gsteff⎛⎜⎜⎝LeffL+ 2effX XJdep2⎞ ⎞ ⎞⎞⎟ ⎟ B ⎟0⎟ 1+ ⎟⎟⋅⎟ ⎟Weff'+ B1⎟ 1+KetaV⎠ ⎠ ⎠⎠bseffB-4 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley