BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

9.2.4 Junction Capacitance Parameters 9-11APPENDIX A: Parameter List A-1A.1 Model Control Parameters A-1A.2 DC Parameters A-1A.3 C-V Model Parameters A-6A.4 NQS Parameters A-8A.5 dW and dL Parameters A-9A.6 Temperature Parameters A-10A.7 Flicker Noise Model Parameters A-12A.8 Process Parameters A-13A.9 Geometry Range Parameters A-14A.10 Model Parameter Notes A-14APPENDIX B: Equation List B-1B.1 I-V Model B-1B.1.1 Threshold Voltage B-1B.1.2 Effective (Vgs-Vth) B-2B.1.3 Mobility B-3B.1.4 Drain Saturation Voltage B-4B.1.5 Effective Vds B-5B.1.6 Drain Current Expression B-5B.1.7 Substrate Current B-6B.1.8 Polysilicon Depletion Effect B-7B.1.9 Effective Channel Length and Width B-7B.1.10 Source/Drain Resistance B-8B.1.11 Temperature Effects B-8B.2 Capacitance Model Equations B-9B.2.1 Dimension Dependence B-9B.2.2 Overlap Capacitance B-10B.2.3 Instrinsic Charges B-12BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley 4