BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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I-V ModelVADIBLC=θ( Vgsteff+ 2vt)t 1 + P Vrou ( DIBLCB bseff )⎛⎜1−⎝AbulkVdsat⎞⎟AbulkVdsat + Vgsteff + 2vt⎠⎡LL ⎤exp( ) exp( ) P⎣2ll ⎦⎥ +effeffθrout = PDIBLC 1 DROUTDROUT⎢− + 2 −t 0 t 0DIBLC2V⎛ −Plitl⎞exp⎜⎟⎝ Vds−Vdseff⎠1 scbe2 scbe1ASCBEP=LeffVAsat=AbulkVdsatEsatLeff + Vdsat + 2RDSνsatCoxWeff Vgsteff[1−2 ( Vgsteff+ 2 vt) ]2/λ− 1+RDSνsatCoxWeffAbulksiToxXlitl = ε ε oxjB.1.7 Substrate Currentα0+ α1⋅ Leff⎛ β ⎞Isub=1Leff⎝⎠ 1 +V−V⎛( )⎟ ⎞⎜0⎟Ids 0ds dseffVds− Vdseffexp −⎜ +V −dsV RdseffdsIds 0 ⎝ VA ⎠dseffVB-6 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley
I-V ModelB.1.8 Polysilicon Depletion Effect21qNN gate poly Xpolypoly = XpolyEpoly=2 2εsiε E = ε E = 2qεN gate Vox ox si poly si poly polyV −V− Φ = V + VgsFBspolyox2( −V− Φ −V) −V= 0a VgsFBspolypolya =2εox22qεsiNgateToxVgs_eff( V −V−Φ )2 ⎛2qε⎞siNgateTox= +Φ +⎜ 2εox gs FB sVFBs1+−12 ⎜2εoxqεsiNgateTox⎝⎠B.1.9 Effective Channel Length and WidthLeff= Ldrawn−2dLWeff= Wdrawn−2dWBSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley B-7
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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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Page 28 and 29:
Mobility Modelµeffµ=01 + ( E E )e
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Bulk Charge Effectµ eff Ev = , E <
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Strong Inversion Drain Current (Lin
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Strong Inversion Current and Output
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Page 42 and 43:
Subthreshold Drain CurrentV1 PSCBE2
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Effective Channel Length and Widthd
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Poly Gate Depletion EffectNgateFigu
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Poly Gate Depletion Effect1.00Tox=8
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Poly Gate Depletion EffectBSIM3v3.2
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Poly Gate Depletion Effect2-40 BSIM
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Unified Channel Charge Density Expr
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Unified Channel Charge Density Expr
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Unified Mobility Expression∆QVF(
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Unified Linear Current ExpressionI=
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Unified Vdsat ExpressionLet V ds =V
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Single Current Expression for All O
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KAPITEL 7RESULTAT OCH REKOMMENDATIO
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CHAPTER 4: Capacitance ModelingAccu
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Geometry Definition for C-V Modelin
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Methodology for Intrinsic Capacitan
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Charge-Thickness Capacitance Modelp
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Charge-Thickness Capacitance Modelw
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Extrinsic CapacitanceFigure 4-4 ill
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Extrinsic Capacitance2( V + δ ) 4
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CHAPTER 5: Non-Quasi Static Model5.
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Model FormulationFigure 5-1. Quasi-
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Model Formulationwhere elm is the E
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Model Formulationwhere i represents
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
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CHAPTER 6: Parameter ExtractionPara
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Extraction ProcedureWOrthogonal Set
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Extraction ProcedureInitial Guess o
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Extraction Procedureoptimization. (
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Extraction ProcedureStep 7Extracted
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Extraction ProcedureB0, B1Fitting T
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Extraction ProcedureStep 20Extracte
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Notes on Parameter Extraction6.4.2
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Notes on Parameter ExtractionnC-1.
Page 135 and 136: CHAPTER 7: Benchmark Test ResultsA
Page 137 and 138: Benchmark Test ResultsIds (A)1.E-02
Page 141 and 142: Benchmark Test Resultsgm/Ids (mho/A
Page 145 and 146: CHAPTER 8: Noise Modeling8.1 Flicke
Page 147 and 148: Flicker NoiseNlC=ox( V −V− min(
Page 149 and 150: Noise Model Flag8.3 Noise Model Fla
Page 151 and 152: CHAPTER 9: MOS Diode Modeling9.1 Di
Page 153 and 154: Diode IV ModelJssw= Js0sw⎛ E⎜
Page 155 and 156: MOS Diode Capacitance Model9.1.3 Mo
Page 157 and 158: MOS Diode Capacitance Model(9.18)Cj
Page 159 and 160: MOS Diode Capacitance Model(9.26)Cj
Page 161 and 162: MOS Diode Capacitance Model(9.32)
Page 163 and 164: APPENDIX A: Parameter ListA.1 Model
Page 165 and 166: DC ParametersSymbolsused inequation
Page 169 and 170: C-V Model ParametersSymbolsused ine
Page 171 and 172: dW and dL ParametersA.5 dW and dL P
Page 173 and 174: Temperature ParametersSymbolsused i
Page 175 and 176: Process ParametersSymbolsused inequ
Page 177 and 178: Model Parameter NotesK2( γ1−γ)(
Page 179 and 180: Model Parameter NotesCgdo = dlc * C
Page 181 and 182: APPENDIX B: Equation ListB.1 I-V Mo
Page 183 and 184: I-V ModelC C V C V D L effDL effdsc
Page 185: I-V ModelEsatsat= 2νµ effB.1.5 Ef
Page 189 and 190: Capacitance Model EquationsTRdsw( T
Page 191 and 192: Capacitance Model EquationsB.2.2.2
Page 193 and 194: Capacitance Model EquationsQ inv= 0
Page 195 and 196: Capacitance Model Equationsif (V ds
Page 197 and 198: Capacitance Model Equations⎡Q W L
Page 199 and 200: Capacitance Model EquationsVgsteff
Page 201 and 202: Capacitance Model Equations(i) 50/5
Page 203 and 204: Capacitance Model EquationsAbulk0
Page 205 and 206: Capacitance Model Equations(3) capM
Page 207 and 208: Capacitance Model EquationsδQsub=
Page 209 and 210: APPENDIX C: References[1] G.S. Gild
Page 211 and 212: [18] M.C. Jeng, "Design and Modelin
Page 213 and 214: [35] K.K. Hung et al, “A Physics-
Page 215 and 216: APPENDIX D: Model Parameter Binning
Page 221 and 222: AC and Capacitance ParametersD.3 AC
Page 223 and 224: NQS ParametersD.4 NQS ParametersSym
Page 225 and 226: Temperature ParametersD.6 Temperatu
Page 227 and 228: Process ParametersSymbolsused inequ
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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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