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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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Unified S<strong>at</strong>ur<strong>at</strong>ion Current Expression<strong>The</strong> parameter λ is introduced to account for non-s<strong>at</strong>ur<strong>at</strong>ion effects.Parameters A 1 and A 2 can be extracted.3.5 Unified S<strong>at</strong>ur<strong>at</strong>ion Current ExpressionA unified expression for the s<strong>at</strong>ur<strong>at</strong>ion current from the subthreshold to the stronginversion regime can be formul<strong>at</strong>ed by introducing the V gsteff function into Eq.(2.6.15). <strong>The</strong> resulting equ<strong>at</strong>ions are the followingIdsI=R I1 +Vdso( Vds<strong>at</strong>)ds dso( Vds<strong>at</strong>)ds<strong>at</strong>⎛ Vds− Vds<strong>at</strong>VdsV⎜ +⎞ −1 ⎟⎛⎜1+⎝ VA⎠⎝VASCBEds<strong>at</strong>⎞⎟⎠(3.5.1)whereVAPvagVgsteff1 1 −1= VAs<strong>at</strong>+ ( 1+ )( + )Es<strong>at</strong>Leff VACLM VADIBLC(3.5.2)VAs<strong>at</strong>=(3.5.3)AbulkVds<strong>at</strong>Es<strong>at</strong>Leff + Vds<strong>at</strong> + 2RDSνs<strong>at</strong>CoxWeff Vgsteff[1−2 ( Vgsteff+ 2 vt) ]2/λ− 1+RDSνs<strong>at</strong>CoxWeffAbulkVACLM=A E L + VPCLMAbulkEs<strong>at</strong>litlbulk s<strong>at</strong> eff gsteff( Vds− Vds<strong>at</strong>)(3.5.4)<strong>BSIM3v3.2.2</strong> Manual Copyright © 1999 UC Berkeley 3-11

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