BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

MOS Diode Capacitance ModelIf P d > W eff(9.22)djbd( Pd−Weff) CjbdswWeffCjbdswgCapbd = A C ++Otherwise(9.23)Capbd = A C + P Cdjbddjbdswgwhere C jbd is the unit bottom area capacitance of the D/B junction,C jbdsw is the periphery capacitance of the D/B junction along thefield oxide side, and C jbdswg is the periphery capacitance of the D/Bjunction along the gate oxide side.If C j is larger than zero, C jbd is calculated byif V bd < 0(9.24)Cjbd⎛ V ⎞bdCj⎜ −P⎟⎝ b ⎠−M j= 1⎟ ⎟ ⎠otherwise(9.25)⎛ VC ⎜jbdCj1 + M⎝=bdjPb⎞If C jsw is large than zero, C jbdsw is calculated byif V bd < 09-8 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley