BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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Model Formulation5.3 Model FormulationThe channel of a MOSFET is analogous to a bias dependent RC distributedtransmission line (Figure 5-1a). In the Quasi-Static (QS) approach, the gatecapacitor node is lumped with both the external source and drain nodes (Figure 5-1b). This ignores the finite time for the channel charge to build-up. One Non-Quasi-Static (NQS) solution is to represent the channel as n transistors in series(Figure 5-1c). This model, although accurate, comes at the expense of simulationtime. The NQS model in BSIM3v3.2.2 was based on the circuit of Figure 5-1d.This Elmore equivalent circuit models channel charge build-up accurately becauseit retains the lowest frequency pole of the original RC network (Figure 5-1a). TheNQS model has two parameters as follows. The model flag, nqsMod, is now onlyan element (instance) parameter, no longer a model parameter. To turn on the NQSmodel, set nqsMod=1 in the instance statement. nqsMod defaults to zero with thismodel off.Name Function Default UnitnqsMod Instance flag for the NQS model 0 noneelm Elmore constant 5 noneTable 5-1. NQS model and instance parameters.5-2 BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley
Model FormulationFigure 5-1. Quasi-Static and Non-Quasi-Static models for SPICE analysis.5.3.1 SPICE sub-circuit for NQS modelFigure 5-2 gives the RC-subcircuit of NQS model for SPICEimplementation. An additional node, Q def (t), is created to keep track of theamount of deficit/surplus channel charge necessary to reach theequilibrium based on the relaxation time approach. The bias-dependentresistance R (1/R=G tau ) can be determined from the RC time constant ( τ ).The current source i cheq (t) results from the equilibrium channel charge,Q cheq (t). The capacitor C is multiplied by a scaling factor C fact (with atypical value of1×10 – 9) to improve simulation accuracy. Q def now becomesQdef() t = V × ( 1⋅C)deffact(5.3.1)BSIM3v3.2.2 Manual Copyright © 1999 UC Berkeley 5-3
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BSIM3v3.2.2 MOSFET ModelUsers’ Ma
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Table of ContentsCHAPTER 1: Introdu
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CHAPTER 6: Parameter Extraction 6-1
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APPENDIX C: References C-1APPENDIX
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CHAPTER 1: Introduction1.1 General
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Non-Uniform Doping and Small Channe
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Mobility Modelµeffµ=01 + ( E E )e
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Bulk Charge Effectµ eff Ev = , E <
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Strong Inversion Drain Current (Lin
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Strong Inversion Current and Output
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Page 42 and 43: Subthreshold Drain CurrentV1 PSCBE2
Page 44 and 45: Effective Channel Length and Widthd
Page 46 and 47: Poly Gate Depletion EffectNgateFigu
Page 48 and 49: Poly Gate Depletion Effect1.00Tox=8
Page 50 and 51: Poly Gate Depletion EffectBSIM3v3.2
Page 52 and 53: Poly Gate Depletion Effect2-40 BSIM
Page 54 and 55: Unified Channel Charge Density Expr
Page 56 and 57: Unified Channel Charge Density Expr
Page 58 and 59: Unified Mobility Expression∆QVF(
Page 60 and 61: Unified Linear Current ExpressionI=
Page 62 and 63: Unified Vdsat ExpressionLet V ds =V
Page 64 and 65: Single Current Expression for All O
Page 67 and 68: KAPITEL 7RESULTAT OCH REKOMMENDATIO
Page 69 and 70: CHAPTER 4: Capacitance ModelingAccu
Page 71 and 72: Geometry Definition for C-V Modelin
Page 73 and 74: Methodology for Intrinsic Capacitan
Page 83 and 84: Charge-Thickness Capacitance Modelp
Page 85 and 86: Charge-Thickness Capacitance Modelw
Page 87 and 88: Extrinsic CapacitanceFigure 4-4 ill
Page 89 and 90: Extrinsic Capacitance2( V + δ ) 4
Page 91: CHAPTER 5: Non-Quasi Static Model5.
Page 95 and 96: Model Formulationwhere elm is the E
Page 97 and 98: Model Formulationwhere i represents
Page 99 and 100: CHAPTER 6: Parameter ExtractionPara
Page 101 and 102: Extraction ProcedureWOrthogonal Set
Page 103 and 104: Extraction ProcedureInitial Guess o
Page 105 and 106: Extraction Procedureoptimization. (
Page 107 and 108: Extraction ProcedureStep 7Extracted
Page 109 and 110: Extraction ProcedureB0, B1Fitting T
Page 111 and 112: Extraction ProcedureStep 20Extracte
Page 113 and 114: Notes on Parameter Extraction6.4.2
Page 115 and 116: Notes on Parameter ExtractionnC-1.
Page 117 and 118: CHAPTER 6: Parameter ExtractionPara
Page 119 and 120: Extraction ProcedureWOrthogonal Set
Page 121 and 122: Extraction ProcedureInitial Guess o
Page 123 and 124: Extraction Procedureoptimization. (
Page 125 and 126: Extraction ProcedureStep 7Extracted
Page 127 and 128: Extraction ProcedureB0, B1Fitting T
Page 129 and 130: Extraction ProcedureStep 20Extracte
Page 131 and 132: Notes on Parameter Extraction6.4.2
Page 133 and 134: Notes on Parameter ExtractionnC-1.
Page 135 and 136: CHAPTER 7: Benchmark Test ResultsA
Page 137 and 138: Benchmark Test ResultsIds (A)1.E-02
Page 139 and 140: Benchmark Test ResultsIds (A)1.E-03
Page 141 and 142: Benchmark Test Resultsgm/Ids (mho/A
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Benchmark Test ResultsIds (A)8.E-05
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CHAPTER 8: Noise Modeling8.1 Flicke
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Flicker NoiseNlC=ox( V −V− min(
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Noise Model Flag8.3 Noise Model Fla
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CHAPTER 9: MOS Diode Modeling9.1 Di
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Diode IV ModelJssw= Js0sw⎛ E⎜
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MOS Diode Capacitance Model9.1.3 Mo
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MOS Diode Capacitance Model(9.18)Cj
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MOS Diode Capacitance Model(9.26)Cj
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MOS Diode Capacitance Model(9.32)
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APPENDIX A: Parameter ListA.1 Model
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DC ParametersSymbolsused inequation
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C-V Model ParametersSymbolsused ine
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dW and dL ParametersA.5 dW and dL P
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Temperature ParametersSymbolsused i
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Process ParametersSymbolsused inequ
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Model Parameter NotesK2( γ1−γ)(
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Model Parameter NotesCgdo = dlc * C
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APPENDIX B: Equation ListB.1 I-V Mo
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I-V ModelC C V C V D L effDL effdsc
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I-V ModelEsatsat= 2νµ effB.1.5 Ef
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I-V ModelB.1.8 Polysilicon Depletio
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Capacitance Model EquationsTRdsw( T
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Capacitance Model EquationsB.2.2.2
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Capacitance Model EquationsQ inv= 0
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Capacitance Model Equationsif (V ds
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Capacitance Model Equations⎡Q W L
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Capacitance Model EquationsVgsteff
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Capacitance Model Equations(i) 50/5
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Capacitance Model EquationsAbulk0
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Capacitance Model Equations(3) capM
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Capacitance Model EquationsδQsub=
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APPENDIX C: References[1] G.S. Gild
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[18] M.C. Jeng, "Design and Modelin
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[35] K.K. Hung et al, “A Physics-
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APPENDIX D: Model Parameter Binning
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AC and Capacitance ParametersD.3 AC
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NQS ParametersD.4 NQS ParametersSym
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Temperature ParametersD.6 Temperatu
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Process ParametersSymbolsused inequ
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BSIM3v3.2.2 MOSFET Model - The University of Texas at Dallas

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